BLW50F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW50F is Designed for use in transmitters in the HF and VHF band applications up tp 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: • PG = 14 dB min. at 75 W/30 MHz • IMD3 = 50 dBc max. at 75 W (PEP) • Omnigold™ Metalization System MAXIMUM RATINGS IC 3.25 A VCBO 110 V VCEO 55 V VEBO 4.0 V PDISS 87 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 2.0 °C/W CHARACTERISTICS 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER ORDER CODE: ASI10834 O TC = 25 C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 100 mA 110 V BVCE0 IC = 200 mA 55 V BVEBO IE = 10 mA 4.0 V ICES VCE = 55 V hFE VCE = 6.0 V Cob VCB = 50 V GP IMD3 ηC VCE = 50 V IC = 1.4 A 19 --- f = 1.0 MHz POUT = 75 W (PEP) 14 --37 --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 10 mA 50 --- 100 pF -30 dB dBc % REV. A 1/1