EGF1A - EGF1D EGF1A - EGF1D 0.181 (4.597) 0.157 (3.988) Features • • • 0.062 (1.575) 0.055 (1.397) Low forward voltage drop. Low profile package. Fast switching for high efficiency. 2 3.93 3.73 1.67 1.47 0.114 (2.896) 0.098 (2.489) 1 0.208 (5.283) 0.188 (4.775) + SMA/DO-214AC 0.096 (2.438) 0.078 (1.981) COLOR BAND DENOTES CATHODE 2.38 2.18 5.49 5.29 0.060 (1.524) 0.030 (0.762) Minimum Recommended Land Pattern 0.008 (0.203) 0.002 (0.051) 0.012 (0.305) 0.006 (0.152) 1.0 Ampere High Efficiency Glass Passivated Rectifier Absolute Maximum Ratings* Symbol IO TA = 25°C unless otherwise noted Parameter Value Units 1.0 A 30 A 2.0 13 85 W mW/°C °C/W RθJA Average Rectified Current @ T L = 100°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient ** RθJC Thermal Resistance, Junction to Case ** 30 °C/W Tstg Storage Temperature Range -65 to +175 °C TJ Operating Junction Temperature -65 to +175 °C if(surge) PD *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. **Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics TA = 25°C unless otherwise noted Parameter Device Units 1A 1B 1C 1D Peak Repetitive Reverse Voltage 50 100 150 200 V Maximum RMS Voltage 35 70 105 140 V DC Reverse Voltage (Rated VR) Maximum Reverse Current @ rated VR TA = 25°C TA = 125°C Maximum Forward Voltage @ 1.0 A 50 100 150 200 V Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz 1998 Fairchild Semiconductor Corporation 10 100 1.0 µA µA V 50 ns 15 pF EGF1A-EGF1D, Rev. B EGF1A - EGF1D Typical Characteristics Forward Characteristics Forward Current Derating Curve 100 1.4 FORWARD CURRENT (A) FORWARD CURRENT (A) 1.6 1.2 1 RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.2 x 0.2" (5.0 x 5.0 mm) COPPER PAD AREAS 0.8 0.6 0.4 TA J = 25º C Pulse Width = 300µS 2% Duty Cycle 10 1 0.1 0.2 0 0 25 50 75 100 125 LEAD TEMPERATURE ( º C) 150 0.01 0.2 175 1.4 1.6 1000 REVERSE CURRENT ( µ A) PEAK FORWARD SURGE CURRENT (A) 0.6 0.8 1 1.2 FORWARD VOLTAGE (V) Reverse Characteristics Non-Repetitive Surge Current 40 30 20 10 0 0.4 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 T A = 100º C 100 10 TA J = 25º C 1 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Typical Junction Capacitance JUNCTION CAPACITANCE (pF) 60 50 40 30 20 10 0 0.1 50Ω NONINDUCTIVE 0.5 1 2 5 10 20 50 100 REVERSE VOLTAGE (V) 50Ω NONINDUCTIVE +0.5A 500 trr (-) DUT 50V (approx) 50Ω NONINDUCTIVE Pulse Generator (Note 2) 0 -0.25A (+) OSCILLOSCOPE (Note 1) NOTES: 1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf. 2. Rise time = 10 ns max; Source impedance = 50 ohms. -1.0A 1.0cm SET TIME BASE FOR 5/ 10 ns/ cm Reverse Recovery Time Characterstic and Test Circuit Diagram EGF1A-EGF1D, Rev. B SMA/DO-214AC Package Dimensions SMA/DO-214AC (FS PKG Code P5) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.064 0.181 (4.597) 0.157 (3.988) 3.93 3.73 0.062 (1.575) 0.055 (1.397) 2 1 0.114 (2.896) 0.098 (2.489) 0.208 (5.283) 0.188 (4.775) 0.008 (0.203) 0.002 (0.051) + 2.38 2.18 5.49 5.29 0.096 (2.438) 0.078 (1.981) 0.060 (1.524) 0.030 (0.762) 1.67 1.47 Minimum Recommended Land Pattern 0.012 (0.305) 0.006 (0.152) August 1999, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D