SS22 - S210 0.185 (4.699) 0.160 (4.064) 0.083 (2.108) 0.075 (1.905 ) Features • Glass passivated junctions. • High current capability, low VF. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. 2 1 0.155 (3.937) 0.130 (3.302) 0.220 (5.588) 0.200 (5.080) SMB/DO-214AA 0.096 (2.438) 0.083 (2.108) COLOR BAND DENOTES CATHODE 0.050 (1.270) 0.030 (0.762) 0.008 (0.203) 0.004 (0.102) 0.012 (0.305) 0.006 (0.152) 2.0 Ampere Schottky Barrier Rectifiers Absolute Maximum Ratings* Symbol IO TA = 25°C unless otherwise noted Parameter Value Units 2.0 A 50 A 1.3 13 75 W mW/°C °C/W RθJA Average Rectified Current .375 " lead length @ TA = 75°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient ** Tstg Storage Temperature Range -65 to +150 °C TJ Operating Junction Temperature -65 to +125 °C if(surge) PD *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. **Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics TA = 25°C unless otherwise noted Parameter Device Units 22 23 24 25 26 28 29 210 Peak Repetitive Reverse Voltage 20 30 40 50 60 80 90 100 V Maximum RMS Voltage 14 21 28 35 42 56 64 80 V DC Reverse Voltage (Rated VR) 20 30 40 50 60 80 90 100 Maximum Reverse Current TA = 25°C (Note 1) @ rated VR TA = 100°C Maximum Forward Voltage @ 2.0 A 500 0.4 10 700 850 V mA mA mV Note: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 1998 Fairchild Semiconductor Corporation SS22-S210, Rev. A SS22-S210 Discrete POWER & Signal Technologies (continued) Typical Characteristics Forward Current Derating Curve Forward Characteristics 50 FORWARD CURRENT (A) FORWARD CURRENT (A) 2 1.5 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 8.0x8.0mm COPPER PAD AREAS 1 0.5 0 50 60 70 20 TA = 25º C f = 1.0 MHz Vsig = 50mVp-p 10 SS22-24 5 SS28 - S210 1 SS25-26 0.1 0.2 80 90 100 110 120 130 140 150 LEAD TEMPERATURE ( º C) 0.3 Reverse Characteristics 1.1 500 T A = 100 ºC SS22-24 1 0.1 TA = 75º C SS25-S210 0.01 200 100 TA = 25º C f = 1.0 MHz Vsig = 50mVp-p SS25-S210 50 20 TA = 25º C 0 CAPACITANCE (pF) SS22-24 20 40 60 80 100 120 140 NORMALIZED REVERSE VOLTAGE (%) 10 0.1 0.5 1 5 10 20 REVERSE VOLTAGE (V) 50 100 Non-Repetitive Surge Current 60 FORWARD SURGE CURRENT (A) REVERSE CURRENT (mA) 1 Junction Capacitance 10 0.001 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) 50 8.3ms Single Half Sine-Wave JEDEC Method 40 30 20 10 0 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 SS22-S210, Rev. A SS22-S210 Schottky Barrier Rectifiers TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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