SB3H90 and SB3H100 Vishay Semiconductors New Product formerly General Semiconductor High Voltage Schottky Rectifier Reverse Voltage 90 to 100V Forward Current 3.0A DO-201AD 1.0 (25.4) Min. 0.210 (5.3) 0.190 (4.8) Dia. 0.375 (9.5) 0.285 (7.2) Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • For use in low voltage high frequency inverters, free wheeling, and polarity protection applications • Guardring for overvoltage protection • High temperature soldering guaranteed: 250°C/10 seconds at terminals Mechanical Data 1.0 (25.4) Min. 0.052 (1.32) 0.048 (1.22) Dia. Dimensions in inches and (millimeters) Case: JEDEC DO-201AD molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.04 oz., 1.12g Maximum Ratings and Thermal Characteristics (T Parameter A = 25°C unless otherwise noted) Symbol SB3H90 SB3H100 Unit Maximum repetitive peak reverse voltage VRRM 90 100 V Maximum working reverse voltage VRWM 90 90 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current at TL = 90°C IF(AV) 3.0 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 100 A Peak repetitive reverse surge current at tp = 2.0µs, 1KHZ IRRM 1.0 A Critical rate of rise of reverse voltage dv/dt 10,000 V/µs Maximum thermal resistance(2) RθJA RθJL 30 10 °C/W Storage temperature range TSTG –55 to +175 °C TJ +175 °C Maximum operating junction temperature Electrical Characteristics Maximum instantaneous forward voltage at: (1) Maximum DC reverse current at rated DC blocking voltage (TA = 25°C unless otherwise noted) IF = 3.0A, TJ = 25°C IF = 3.0A, TJ = 125°C VF 0.80 0.65 V TJ = 25°C TJ = 125°C IR 20 4 µA mA Notes: (1) Pulse test: 300µs pulse width, 1% duty cycle (2) P.C.B. mounted with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas Document Number 88720 1-Jul-02 www.vishay.com 1 SB3H90 and SB3H100 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 2 -- Maximum Non-repetitive Peak Forward Surge Current Average Forward Current (A) 4.0 Resistive or Inductive Load 0.375" (9.5mm) lead length 3.0 2.0 1.0 Peak Forward Surge Current (A) Fig. 1 -- Forward Current Derating Curve 0 50 25 100 75 125 150 80 60 40 20 1 175 100 10 Lead Temperature (°C) Number of Cycles at 60 Hz Fig. 3 -- Typical Instantaneous Forward Characteristics Fig. 4 -- Typical Reverse Characteristics Instantaneous Reverse Current (µA) 100 TJ = 175°C 10 TJ = 150°C 1 TJ = 100°C TJ = 125°C 0.1 TJ = 25°C Pulse Width = 300 s 1% Duty Cycle 0.01 0 0.2 0.4 0.6 0.8 1.0 TJ = 125°C 10 TJ = 100°C 1 TJ = 25°C 0.1 0.01 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 5 -- Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance TJ = 25°C f = 1.0 MHz Vsig = 50mVp-p 100 10 1 10 Reverse Voltage (V) www.vishay.com 2 TJ = 150°C 100 Instantaneous Forward Voltage (V) 1,000 0.1 1000 1.2 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) TJ = TJ max. 8.3ms single half sine-wave (JEDEC Method) 10 0 Junction Capacitance (pF) 100 100 10 1 0.1 0 0.1 1 10 100 t, Pulse Duration (sec.) Document Number 88720 1-Jul-02