SS3H9 and SS3H10 Vishay Semiconductors New Product formerly General Semiconductor High Voltage Surface Mount Schottky Barrier Rectifiers Reverse Voltage 90 to 100V Forward Current 3.0A Cathode Band DO-214AB (SMC) Mounting Pad Layout 0.185 MAX. (4.69 MAX.) 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 MIN. (3.20 MIN.) Dimensions in inches and (millimeters) 0.280 (7.11) 0.260 (6.60) 0.060 MIN. (1.52 MIN.) 0.012 (0.305) 0.006 (0.152) 0.320 REF 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.320 (8.13) 0.305 (7.75) Features 0.008 (0.203) Max. Mechanical Data Case: JEDEC DO-214AB molded plastic body Terminals: Solder plated, solderable per MIL-STD750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.007 oz., 0.25 g • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low profile surface mount package • Built-in strain relief • Low power loss, high efficiency • For use in low voltage high frequency inverters, free wheeling, and polarity protection applications • Guardring for overvoltage protection • High temperature soldering guaranteed: 250°C/10 seconds at terminals Maximum Ratings and Thermal Characteristics (T = 25°C unless otherwise noted) Parameter SS3H9 SS3H10 MS9 MS10 A Symbol Device marking code Unit Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current at: TL = 115°C IF(AV) 3.0 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 100 A Peak repetitive reverse surge current at tp = 2.0µs, 1KHZ IRRM 1.0 A Critical rate of rise of reverse voltage dv/dt 10,000 V/µs Typical thermal resistance – junction to lead TL = 25°C – junction to ambient(2) RθJL RθJA 9.7 32 °C/W TJ, TSTG –65 to +175 °C Operating junction and storage temperature range Electrical Characteristics Maximum instantaneous forward voltage at:(1) (TA = 25°C unless otherwise noted) IF = 3.0A, TJ = 25°C IF = 3.0A, TJ = 125°C VF 0.8 0.65 V TJ = 25°C TJ = 125°C IR 20 4 µA mA Maximum DC reverse current at rated DC blocking voltage Notes: (1) Pulse test: 300µs pulse width, 1% duty cycle (2) PCB mounted Document Number 88752 18-Aug-04 www.vishay.com 1 SS3H9 and SS3H10 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 2 -- Maximum Non-repetitive Peak Forward Surge Current Fig. 1 – Forward Current Derating Curve 4.0 Peak Forward Surge Current (A) 100 Average Forward Current (A) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 50 75 100 125 150 175 60 40 20 200 100 10 1 Lead Temperature (°C) Number of Cycles at 60 Hz Fig. 3 – Typical Instantaneous Forward Characteristics Fig. 4 – Typical Reverse Characteristics 1000 Instantaneous Reverse Current (µA) Instantaneous Forward Current (A) 80 10 25 100 TJ = 175°C 10 TJ = 125°C TJ = 150°C 1 TJ = 100°C TJ = 25°C 0.1 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 TJ = 150°C 100 TJ = 125°C 10 TJ = 100°C 1 0.1 TJ = 25°C 0.01 0.001 20 1.5 40 60 80 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage, (%) Fig. 5 – Typical Junction Capacitance Fig. 6 – Typical Transient Thermal Impedance 1000 100 10 0.1 1 10 Reverse Voltage (V) www.vishay.com 2 100 100 Transient Thermal Impedance (°C/W) Junction Capacitance (pF) TJ = TJ max. 8.3ms single half sine-wave (JEDEC Method) 100 10 1 0.1 0.01 0.1 1 10 t -- Pulse Duration (sec) Document Number 88752 18-Aug-04