VISHAY MBR40H50PT

MBR40H35PT thru MBR40H60PT
Vishay Semiconductors
New Product
formerly General Semiconductor
Dual Schottky Barrier Rectifier
Reverse Voltage 35 to 60 V
Forward Current 40 A
Features
TO-247AD (TO-3P)
0.645 (16.4)
0.625 (15.9)
0.245 (6.2)
0.225 (5.7)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
0.078 REF
(1.98)
30
0.170
(4.3)
0.840 (21.3)
10 °
10 TYP.
BOTH SIDES
0.142 (3.6)
0.138 (3.5)
0.820 (20.8)
1
2
3
0.086 (2.18)
0.076 (1.93)
1 REF.
BOTH
SIDES
0.795 (20.2)
0.775 (19.6)
0.225 (5.7)
0.205 (5.2)
Mechanical Data
0.118 (3.0)
0.127 (3.22)
0.160 (4.1)
0.140 (3.5)
Case: JEDEC TO-247AD molded plastic body
Terminals: Lead solderable per MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.17” (4.3 mm) from case
Polarity: As marked
Mounting Position: Any Mounting Torque: 10 in-lbs max.
Weight: 0.2 oz., 5.6 g
0.108 (2.7)
0.117 (2.97)
PIN 1
PIN 2
PIN 3
CASE
0.030 (0.76)
0.048 (1.22)
0.044 (1.12)
• Plastic package has Underwriters Laboratory
Flammability Classifications 94 V-0
• Dual rectifier construction, positive center-tap
• Metal silicon junction, majority carrier conduction
• High surge capability
• Low forward voltage drop, low power loss
and high efficiency
• For use in low voltage, high frequency inverters,
free-wheeling, and polarity protection applications
• Guardring for overvoltage protection
• Rated for reverse surge and ESD
• 175 °C maximum operation junction temperature
0.020 (0.51)
Maximum Ratings & Thermal Characteristics
Parameter
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol MBR40H35PT MBR40H45PT MBR40H50PT MBR40H60PT
Unit
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Maximum working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Maximum average forward rectified current (See Fig. 1)
IF(AV)
40
A
Peak repetitive forward current per leg at TC = 155 °C
(rated VR, square wave, 20 KHZ)
IFRM
40
A
Non-repetitive avalanche energy per leg
at 25 °C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
400
A
Peak repetitive reverse surge current
(1)
Peak non-repetitive reverse energy (8/20 µs waveform)
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 kΩ
IRRM
2.0
1.0
A
ERSM
30
25
mJ
VC
25
kV
Thermal resistance from junction to case per leg
RθJC
1.2
°C/W
Voltage rate of change at (rated VR)
dv/dt
10,000
V/µs
TJ
– 65 to +175
°C
TSTG
– 65 to +175
°C
Operating junction temperature range
Storage temperature range
Document Number 88794
4-Feb-03
www.vishay.com
1
MBR40H35PT thru MBR40H60PT
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TC = 25°C unless otherwise noted)
Parameter
Maximum instantaneous
forward voltage per leg (2)
Symbol
at
at
at
at
IF =
IF =
IF =
IF =
20
20
40
40
A
A
A
A
Maximum instantaneous reverse current
at rated DC blocking voltage per leg(2)
MBR40H35PT, MBR40H45PT MBR40H50PT, MBR40H60PT
Unit
Typ
Max
Typ
Max
0.63
0.55
0.73
0.66
–
0.56
–
0.68
0.69
0.60
0.83
0.72
V
150
25
–
6.0
150
25
µA
mA
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ =125 °C
VF
–
0.49
–
0.62
TJ = 25 °C
TJ =125°C
IR
–
9.0
Notes: (1) 2.0 µs pulse width, f = 1.0 KHZ
(2) Pulse test: 300 µs pulse width, 1% duty cycle
www.vishay.com
2
Document Number 88794
4-Feb-03
MBR40H35PT thru MBR40H60PT
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current Per Leg
Fig. 1 – Forward Current
Derating Curve
45
400
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Peak Forward Surge Current (A)
Average Forward Current (A)
40
35
30
25
20
15
10
5
300
200
100
0
25
75
50
100
125
150
175
Instantaneous Forward Current (A)
10
100
Number of Cycles at 60 HZ
Fig. 3 – Typical Instantaneous
Forward Characteristics Per Leg
Fig. 4 – Typical Reverse
Characteristics Per Leg
100
10
TJ = 150°C
TJ = 25°C
1
100
TJ = 150°C
10
TJ = 125°C
1
0.1
MBR40H35PT -- MBR40H45PT
MBR40H50PT -- MBR40H60PT
0.01
TJ = 125°C
0.1
0.001
MBR40H35PT -- MBR40H45PT
MBR40H50PT -- MBR40H60PT
0.01
0
0.1
0.3
0.2
0.4
0.5
0.6
0.7
0.8
TJ = 25°C
0.0001
0
0.9
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance Per Leg
Fig. 6 – Typical Transient
Thermal Impedance Per Leg
10
TJ = 25°C
f = 1.0 MHZ
Vsig = 50mVp-p
Transeint Thermal Impedance (°C/W)
10000
pF - Junction Capacitance
1
Case Temperature (°C)
Instantaneous Reverse Leakage Current
(mA)
0
1000
100
0.1
1
10
Reverse Voltage (V)
Document Number 88794
4-Feb-03
100
1
0.1
0.01
0.1
1
10
t, Pulse Duration (sec.)
www.vishay.com
3