K814P/K824P/K844P Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input FEATURES • Endstackable to 2.54 mm (0.1") spacing • DC isolation test voltage VISO = 5000 VRMS • Low coupling capacitance of typical 0.3 pF • Current transfer ratio (CTR) of typical 100 % • Low temperature coefficient of CTR • Wide ambient temperature range C • Lead (Pb)-free component E • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • Feature phones 1 A 4 PIN C • Answering machines 8 PIN • PBX 16 PIN • Fax machines 17220_2 C AGENCY APPROVALS DESCRIPTION • UL1577, file no. E76222 system code U, double protection The K814P/K824P/K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared emitting diodes (reverse polarity) in 4-pin (single); 8 pin (dual) or 16-pin (quad) plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements. • C-UL CSA 22.2, bulletin 5A ORDER INFORMATION PART REMARKS K814P CTR > 20 %, single channel, DIP-4 K824P CTR > 20 %, dual channel, DIP-8 K844P CTR > 20 %, quad channel, DIP-16 ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL tP ≤ 10 µs VALUE UNIT IF ± 60 mA IFSM ± 1.5 A Pdiss 100 mW Tj 125 °C Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V IC 50 mA INPUT Forward current Forward surge current Power dissipation Junction temperature OUTPUT Collector current Collector peak current Power dissipation Junction temperature Document Number: 83523 Rev. 2.0, 09-Jan-08 tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Pdiss 150 mW Tj 125 °C For technical questions, contact: [email protected] www.vishay.com 1 K814P/K824P/K844P Optocoupler, Phototransistor Output, AC Input Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT t = 1.0 min VISO (2) 5000 VRMS Total power dissipation Ptot 250 mW Operating ambient temperature range Tamb - 40 to +100 °C Storage temperature range Tstg - 55 to + 125 °C Tsld 260 °C COUPLER AC isolation test voltage (RMS) 2 mm from case, t ≤ 10 s Soldering temperature (3) Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Related to standard climate 23/50 DIN 50014. (3) Refer to wave profile for soldering conditions for through hole devices. ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Forward voltage IF = ± 50 mA VF Reverse current VR = ± 6.0 V IR MIN. TYP. MAX. UNIT 1.25 1.6 V 10 µA INPUT OUTPUT Collector emitter voltage IC = 100 µA VCEO 70 V Emitter collector voltage IE = 100 µA VECO 7 V VCE = 20 V, IF = 0, E = 0 ICEO 100 nA Collector emitter saturation voltage IF = ± 10 mA, IC = 1 mA VCEsat 0.3 V Cut-off frequency IF = ± 10 mA, VCE = 5 V, RL = 100 Ω fc 100 kHz f = 1 MHz Ck 0.3 pF Collector dark current COUPLER Coupling capacitance Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER IC/IF TEST CONDITION PART SYMBOL MIN. VCE = 5 V, IF = ± 5 mA K814P CTR 20 MIN. TYP. MAX. UNIT 300 % MAX. UNIT SWITCHING CHARACTERISTICS TEST CONDITION SYMBOL Delay time PARAMETER VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) td 3.0 µs Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) tr 3.0 µs Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) tf 4.7 µs Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) ts 0.3 µs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) ton 6.0 µs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) toff 5.0 µs Turn-on time VS = 5 V, IC = 10 mA, RL = 1 kΩ (see figure 1) ton 9.0 µs Turn-off time VS = 5 V, IC = 10 mA, RL = 1 kΩ (see figure 1) toff 18.0 µs www.vishay.com 2 For technical questions, contact: [email protected] TYP. Document Number: 83523 Rev. 2.0, 09-Jan-08 K814P/K824P/K844P Optocoupler, Phototransistor Output, AC Input Vishay Semiconductors IF 0 IC IF +5V IF 0 10 % 0 Channel I Channel II 50 Ω 100 Ω Oscilloscope RL > 1 MΩ CL < 20 pF 13343 t 100 % 90 % IC = 2 mA; adjusted through input amplitude RG = 50 Ω tp = 0.01 T tp = 50 µs tp tp td tr t on (= t d + tr) tr td t on ts Pulse Duration Delay Time Rise Time Turn-on Time ts tf t off (= ts + tf) t tf t off Storage Time Fall Time Turn-off Time 96 11698 Fig. 1 - Test Circuit, Non-Saturated Operation IF IF = 10 mA 0 Fig. 3 - Switching Times +5V IC RG = 50 tp = 0.01 T tp = 50 s Channel I Channel II 50 Oscilloscope RL > 1 M CL < 20 pF 1k 13344 Fig. 2 - Test Circuit, Saturated Operation TYPICAL CHARACTERISTICS 1000 300 Coupled device IF - Forward Current (mA) Ptot - Total Power Dissipation (mW) Tamb = 25 °C, unless otherwise specified 250 200 Phototransistor 150 IR-diode 100 50 10 1 0.1 0 0 96 11700 100 40 80 Tamb - Ambient Temperature (°C) Fig. 4 - Total Power Dissipation vs. Ambient Temperature Document Number: 83523 Rev. 2.0, 09-Jan-08 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 120 96 11862 VF - Forward Voltage (V) Fig. 5 - Forward Current vs. Forward Voltage For technical questions, contact: [email protected] www.vishay.com 3 K814P/K824P/K844P Optocoupler, Phototransistor Output, AC Input 100 2.0 VCE = 5 V IF = 5 mA 1.5 1.0 0.5 0 25 50 IF = 50 mA 5 mA Tamb - Ambient Temperature (°C) 1 mA 0.1 100 10 Fig. 9 - Collector Current vs. Collector Emitter Voltage VCEsat - Collector Emitter Saturation Voltage (V) 20 % used 100 10 0.8 CTR = 50 % used 0.6 0.4 0.2 10 % used 1 0 0 25 50 75 100 Tamb - Ambient Temperature (°C) 95 11026 VCE = 5 V 10 1 0.1 1 10 100 IF - Forward Current (mA) Fig. 8 - Collector Current vs. Forward Current 100 10 IC - Collector Current (mA) Fig. 10 - Collector Emitter Saturation Voltage vs. Collector Current CTR - Current Transfer Ratio (%) 100 0.01 0.1 1 95 11028 Fig. 7 - Collector Dark Current vs. Ambient Temperature IC - Collector Current (mA) 1 VCE - Collector Emitter Voltage (V) 1.0 VCE = 20 V IF = 0 1000 www.vishay.com 4 2 mA 1 95 10985 10000 95 11027 10 mA 10 75 Fig. 6 - Relative Current Transfer Ratio vs. Ambient Temperature ICEO - Collector Dark Current, with Open Base (nA) 20 mA 0.1 0 - 25 95 11025 IC - Collector Current (mA) CTRrel - Relative Current Transfer Ratio Vishay Semiconductors 1000 VCE = 5 V 100 10 1 0.1 95 11029 1 10 100 IF - Forward Current (mA) Fig. 11 - Current Transfer Ratio vs. Forward Current For technical questions, contact: [email protected] Document Number: 83523 Rev. 2.0, 09-Jan-08 K814P/K824P/K844P 50 ton/toff- Turn-on /Turn-off Time (µs) ton/toff - Turn-on/Turn-off Time (µs) Optocoupler, Phototransistor Output, AC Input Saturated Operation VS = 5 V RL = 1 kΩ 40 30 toff 20 10 ton 0 5 0 95 11031 10 20 15 Vishay Semiconductors 10 8 Non-Saturated Operation VS = 5 V RL = 100 Ω ton 6 toff 4 2 0 2 0 IF - Forward Current (mA) Fig. 12 - Turn-on/Turn-off Time vs. Forward Current 4 8 6 IC - Collector Current (mA) 95 11030 Fig. 13 - Turn-on/Turn-off Time vs. Collector Current PACKAGE DIMENSIONS in millimeters < 4.75 3.6 ± 0.1 7.62 nom. 4.4 ± 0.2 4.5 ± 0.2 6.3 ± 0.1 5 3.3 0.25 ± 0.0 0.53 ± 0.05 9 ± 0.8 1.32 ± 0.05 2.54 nom. E. g.: Special features: endstackable to 2.54 mm (0.100") spacing 4 3 Weight: ca. 0.25 g Creepage distance: > 6 mm Air path: > 6 mm after mounting on PC board 1 2 2.54 2.54 14789 Document Number: 83523 Rev. 2.0, 09-Jan-08 For technical questions, contact: [email protected] technical drawings according to DIN specifications www.vishay.com 5 K814P/K824P/K844P Optocoupler, Phototransistor Output, AC Input Vishay Semiconductors 7.62 nom. 3.6 ± 0.1 4.4 ± 0.2 < 20 6.3 ± 0.1 3.3 19.7 ± 0.2 5 0.25 ± 0.0 0.53 ± 0.05 9 ± 0.8 1.32 ± 0.05 2.54 nom. 7 x 2.54 = 17.78 Weight: ca. 1.08 g Creepage distance: > 6 mm Air path: > 6 mm after mounting on PC board 16 15 14 13 12 11 10 9 technical drawings according to DIN specifications 14783 1 2 3 4 5 6 7 8 < 9.8 3.6 ± 0.1 7.62 nom. 4.4 ± 0.2 9.5 ± 0.2 6.3 ± 0.1 5 3.3 0.25 ± 0.0 0.53 ± 0.05 1.32 ± 0.05 9 ± 0.8 2.54 nom. 3 x 2.54 = 7.62 8 7 6 5 1 2 3 4 Weight: ca. 0.55 g Creepage distance: > 6 mm Air path: > 6 mm after mounting on PC board technical drawings according to DIN specifications 14784 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 83523 Rev. 2.0, 09-Jan-08 K814P/K824P/K844P Optocoupler, Phototransistor Output, AC Input Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number: 83523 Rev. 2.0, 09-Jan-08 For technical questions, contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1