FAIRCHILD MMBF4416A

MMBF4416A
MMBF4416A
N-Channel RF Amplifier
G
• This device is designed for RF amplifiers.
• Sourced from process 50.
S
D
SOT-23
Mark: 6BG
Absolute Maximum Ratings * TA=25°C unless otherwise noted
Symbol
VDG
Drain-Gate Voltage
Parameter
Value
35
Units
V
VGS
Gate-Source Voltage
-35
V
IGF
Forward Gate Current
10
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
- 55 ~ 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage
IGSS
Gate Reverse Current
Test Condition
VDS = 0, IG = 1.0µA
Min.
Typ.
Max.
Units
-100
pA
-35
V
VGS = -20V, VDS = 0
VGS(off)
Gate Source Cut-off Voltage
VDS = 15V, ID = 1.0nA
-2.5
-6.0
V
VGS
Gate Source Voltage
VDS = 15V, ID = 500µA
-1
-5.5
V
On Characteristics
IDSS
Zero-Gate Voltage Drain Current
VGS = 15V, VGS = 0
5
15
µA
VGS(f)
VDS = 0, IG = 1.0mA
1
V
Gate-Source Forward Voltage
Small Signal Characteristics
gfs
Forward Transfer Conductance *
7500
µmhos
gos
Output Conductance *
VDS = 15V, VGS = 0, f = 1.0kHz
50
µmhos
Ciss
Input Capacitance
VDS = 15V, VGS = 0, f = 1.0MHz
4.0
PF
Crss
Reverse Transfer Capacitance
VDS = 15V, VGS = 0, f = 1.0MHz
0.8
PF
Coss
Output Capacitance
VDS = 15V, VGS = 0, f = 1.0MHz
2.0
PF
NF
Noise Figure
VDS = 15V, VGS = 0, ID = 5mA,
Rg = 1kΩ, f = 400MHz
4.0
dB
VDS = 15V, VGS = 0, f = 1.0kHz
4500
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
PD
RθJA
Total Device Dissipation
Derate above 25°C
Parameter
Max.
225
1.8
Units
mW
mW/°C
Thermal Resistance, Junction to Ambient
556
°C/W
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
MMBF4416A
Package Dimensions
±0.10
±0.10
2.40
0.40 ±0.03
1.30
0.45~0.60
0.20 MIN
SOT-23
0.03~0.10
0.38 REF
0.40 ±0.03
+0.05
0.12 –0.023
0.96~1.14
0.97REF
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1