FAIRCHILD TIS75

TIS75
TIS75
N-Channel General Purpose Amplifier
• This device is designed for low level analog switching, sample and
hold circuits and chopper stabilized amplifiers.
• Sourced from process 54.
TO-92
1
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings * Ta=25°C unless otherwise noted
Symbol
VDG
Drain-Gate Voltage
Parameter
Value
30
Units
V
VGS
Gate-Source Voltage
-30
V
IGF
Forward Gate Current
10
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Off Characteristics
Parameter
Test Condition
Min.
Typ.
Max.
Units
V(BR)GSS
Gate-Source Breakdown Voltage
IG = 1.0µA, VDS = 0
IGSS
Gate Reverse Current
VGS = 15V, VDS = 0
VGS = 15V, VDS = 0, Ta = 100°C
-2.0
-5.0
nA
µA
ID(off)
Drain Cutoff Leakage Current
VDS = 15V, VGS = -10V
VDS = 15V, VGS = -10V,
Ta = 100°C
-2.0
-5.0
nA
µA
VGS(off)
Gate-Source Cutoff Voltage
VDS = 20V, ID = 4.0nA
-0.8
-4.0
V
8
80
mA
60
Ω
-30
V
On Characteristics *
IDSS
Zero-Gate Voltage Drain Current *
VDS = 15V, VGS = 0
rDS(on)
Drain-Source On Resistance
VDS ≤ 0.1V, VGS = 0
Small Signal Characteristics
Ciss
Input Capacitance
VDS = 0, VGS = -10V, f = 1.0MHz
18
pF
Crss
Reverse Transfer Capacitance
VDS = 0, VGS = -10V, f = 1.0MHz
8.0
pF
VGS(off) = -4.0V, VGS(on) = 0,
ID = 5.0mA, VDS = 10V
10
ns
Switching Characteristics
tr
Rise Time
ton
Turn-On Time
toff
Turn-Off Time
10
ns
100
ns
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 3.0%
©2004 Fairchild Semiconductor Corporation
Rev. A, June 2004
Symbol
PD
Total Device Dissipation
Derate above 25°C
Parameter
Max.
350
2.8
RθJC
Thermal Resistance, Junction to Case
125
RθJA
Thermal Resistance, Junction to Ambient
357
©2004 Fairchild Semiconductor Corporation
Units
mW
mW/°C
°C/W
°C/W
Rev. A, June 2004
TIS75
Thermal Characteristics Ta=25°C unless otherwise noted
TIS75
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. A, June 2004
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I11