VISHAY MBRF10H90

MBR(F,B)10H90 & MBR(F,B)10H100
Vishay General Semiconductor
High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AC
FEATURES
• Guardring for overvoltage protection
ITO-220AC
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
2
2
1
1
MBR10H90
MBR10H100
MBRF10H90
MBRF10H100
PIN 1
PIN 1
CASE
PIN 2
PIN 2
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
TO-263AB
K
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
2
TYPICAL APPLICATIONS
1
MBRB10H90
MBRB10H100
PIN 1
PIN 2
K
HEATSINK
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
90 V, 100 V
IFSM
250 A
VF
0.64 V
IR
4.5 µA
TJ max.
175 °C
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR10H90
MBR10H100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current
IF(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
250
A
Peak repetitive reverse current at tp = 2 µs, 1 kHz
IRRM
0.5
A
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min
Document Number: 88667
Revision: 07-May-08
dV/dt
10 000
V/µs
TJ, TSTG
- 65 to + 175
°C
VAC
1500
V
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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1
MBR(F,B)10H90 & MBR(F,B)10H100
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 10 A
IF = 10 A
IF = 20 A
IF = 20 A
Maximum instantaneous forward voltage (1)
Maximum reverse current at working peak reverse voltage (1)
SYMBOL
VALUE
UNIT
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
VF
0.77
0.64
0.88
0.73
V
TJ = 25 °C
TJ = 125 °C
IR
4.5
6.0
µA
mA
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
RθJC
2.7
5.8
2.7
°C/W
Typical thermal resistance
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AC
MBR10H100-E3/45
1.80
45
50/tube
Tube
ITO-220AC
MBRF10H100-E3/45
1.94
45
50/tube
Tube
TO-263AB
MBRB10H100-E3/45
1.33
45
50/tube
Tube
TO-263AB
MBRB10H100-E3/81
1.33
81
800/reel
Tape and reel
TO-220AC
MBR10H100HE3/45 (1)
1.80
45
50/tube
Tube
ITO-220AC
MBRF10H100HE3/45
(1)
1.94
45
50/tube
Tube
TO-263AB
MBRB10H100HE3/45 (1)
1.33
45
50/tube
Tube
TO-263AB
(1)
1.33
81
800/reel
Tape and reel
MBRB10H100HE3/81
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
20
300
Peak Forward Surge Current (A)
Average Forward Current (A)
Resistive or Inductive Load
16
MBR
MBRB
12
8
4
MBRF
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
250
200
150
100
50
0
0
50
0
100
150
180
1
100
10
Case Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88667
Revision: 07-May-08
MBR(F,B)10H90 & MBR(F,B)10H100
Vishay General Semiconductor
10 000
TJ = 175 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
TJ = 125 °C
TJ = 150 °C
TJ = 100 °C
1.0
TJ = 25 °C
0.1
0.01
0.1
100
10
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100
10 000
TJ = 150 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
1000
TJ = 125 °C
1000
TJ = 100 °C
100
10
1
0.1
TJ = 25 °C
0.01
20
40
60
80
100
10
1
0.1
0.01
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
Document Number: 88667
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
MBR(F,B)10H90 & MBR(F,B)10H100
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AC
TO-220AC
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91) DIA.
0.148 (3.74) DIA.
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
1
PIN
2
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
7° REF.
0.191 (4.85)
0.171 (4.35)
CASE
0.037 (0.94)
0.027 (0.68)
7° REF.
2
1
0.560 (14.22)
0.530 (13.46)
PIN 1
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.350 (8.89)
0.330 (8.38)
0.110 (2.79)
0.100 (2.54)
PIN 2
0.105 (2.67)
0.095 (2.41)
0.671 (17.04)
0.651 (16.54)
PIN
1.148 (29.16)
1.118 (28.40)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
7° REF.
0.076 (1.93) REF.
45° REF.
0.635 (16.13)
0.625 (15.87)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
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4
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.33 (8.38) MIN.
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88667
Revision: 07-May-08
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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