TM FQB10N20C/FQI10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. • • • • • • 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! D " G S FQB Series Absolute Maximum Ratings Symbol VDSS ID G D S ! FQI Series S TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQB10N20C/FQI10N20C 200 Units V 9.5 A - Continuous (TC = 100°C) IDM Drain Current " " G! I2-PAK D2-PAK ! " - Pulsed (Note 1) 6.0 A 38 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 210 mJ IAR Avalanche Current (Note 1) 9.5 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 7.2 5.5 72 0.57 -55 to +150 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W ©2003 Fairchild Semiconductor Corporation Typ -- Max 1.74 Units °C/W Rev. A, August 2003 FQB10N20C/FQI10N20C QFET Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 200 -- -- V -- 0.28 -- V/°C VDS = 200 V, VGS = 0 V -- -- 10 µA VDS = 160 V, TC = 125°C -- -- 100 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.75 A -- 0.29 0.36 Ω gFS Forward Transconductance VDS = 40 V, ID = 4.75 A -- 5.5 -- S -- 395 510 pF -- 97 125 pF -- 40.5 53 pF (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100 V, ID = 9.5 A, RG = 25 Ω (Note 4, 5) VDS = 160 V, ID = 9.5 A, VGS = 10 V (Note 4, 5) -- 11 30 ns -- 92 190 ns -- 70 150 ns -- 72 160 ns -- 20 26 nC -- 3.1 -- nC -- 10.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 9.5 A ISM -- -- 38 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 9.5 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 9.5 A, dIF / dt = 100 A/µs (Note 4) -- 158 -- ns -- 0.97 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 3.5mH, IAS = 9.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 9.5A, di/dt≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 FQB10N20C/FQI10N20C Electrical Characteristics FQB10N20C/FQI10N20C Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 10 o 150 C ID, Drain Current [A] 1 10 0 10 o 25 C o -55 C 0 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test -1 -1 10 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.5 IDR , Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 1 10 1.0 VGS = 10V VGS = 20V 0.5 ※ Note : TJ = 25℃ 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test -1 0.0 0 5 10 15 20 25 30 10 0.2 0.4 ID, Drain Current [A] 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 1200 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 0.6 VDS = 40V 10 Capacitance [pF] 800 VGS , Gate-Source Voltage [V] VDS = 100V Ciss Coss 600 Crss 400 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 200 VDS = 160V 8 6 4 2 ※ Note : ID = 9.5A 0 -1 10 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation 0 0 4 8 12 16 20 24 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A, August 2003 FQB10N20C/FQI10N20C Typical Characteristics (Continued) 1.2 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4.75 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 10 Operation in This Area is Limited by R DS(on) 2 10 8 100 µs 1 1 ms ID, Drain Current [A] ID, Drain Current [A] 10 10 ms DC 0 10 ※ Notes : -1 10 o 6 4 2 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 25 -2 10 0 1 10 2 10 50 10 ※ N o te s : 1 . Z θ J C( t ) = 1 . 7 4 ℃ / W M a x . 2 . D u ty F a c t o r , D = t 1 / t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .0 5 -1 PDM 0 .0 2 JC (t), T h e rm a l R e s p o n s e 150 D = 0 .5 0 .1 0 .0 1 t1 Z θ s in g le p u ls e 10 125 0 0 .2 10 100 Figure 10. Maximum Drain Current vs Case Temperature Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 FQB10N20C/FQI10N20C Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2003 Fairchild Semiconductor Corporation ID (t) VDS (t) VDD tp Time Rev. A, August 2003 FQB10N20C/FQI10N20C Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 FQB10N20C/FQI10N20C Package Dimensions 4.50 ±0.20 9.90 ±0.20 +0.10 2.00 ±0.10 2.54 TYP (0.75) ° ~3 0° 0.80 ±0.10 1.27 ±0.10 2.54 ±0.30 15.30 ±0.30 0.10 ±0.15 2.40 ±0.20 4.90 ±0.20 1.40 ±0.20 9.20 ±0.20 1.30 –0.05 1.20 ±0.20 (0.40) D2PAK +0.10 0.50 –0.05 2.54 TYP 9.20 ±0.20 (2XR0.45) 4.90 ±0.20 15.30 ±0.30 10.00 ±0.20 (7.20) (1.75) 10.00 ±0.20 (8.00) (4.40) 0.80 ±0.10 ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 (Continued) I2PAK 4.50 ±0.20 (0.40) 9.90 ±0.20 +0.10 MAX13.40 9.20 ±0.20 (1.46) 1.20 ±0.20 1.30 –0.05 0.80 ±0.10 2.54 TYP 2.54 TYP 10.08 ±0.20 1.47 ±0.10 MAX 3.00 (0.94) 13.08 ±0.20 ) 5° (4 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 10.00 ±0.20 ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 FQB10N20C/FQI10N20C Package Dimensions TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST® FASTr™ Bottomless™ FRFET™ CoolFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ EnSigna™ ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. I5