TM FQAF22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. • • • • • • • -16.6A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typically 40 nC) Low Crss ( typically 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G TO-3PF G D S FQAF Series Absolute Maximum Ratings Symbol VDSS ID S TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQAF22P10 -100 - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) dv/dt PD TJ, TSTG TL - Pulsed Units V -16.6 A -11.7 A -66.4 A ± 30 V (Note 2) 710 mJ (Note 1) -16.6 A (Note 1) 7.0 -6.0 70 0.48 -55 to +175 mJ V/ns W W/°C °C 300 °C (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient ©2002 Fairchild Semiconductor Corporation Typ -- Max 2.1 Units °C/W -- 40 °C/W Rev. B, August 2002 FQAF22P10 QFET Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units -100 -- -- V -- -0.1 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C IDSS IGSSF IGSSR VDS = -100 V, VGS = 0 V -- -- -1 µA VDS = -80 V, TC = 125°C -- -- -10 µA Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -8.3 A -- 0.096 0.125 Ω gFS Forward Transconductance VDS = -40 V, ID = -8.3 A -- 12 -- S -- 1170 1500 pF -- 460 600 pF -- 160 200 pF ns (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -50 V, ID = -22 A, RG = 25 Ω (Note 4, 5) VDS = -80 V, ID = -22 A, VGS = -10 V (Note 4, 5) -- 17 45 -- 170 350 ns -- 60 130 ns -- 110 230 ns -- 40 50 nC -- 7.0 -- nC -- 21 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -16.6 ISM -- -- -66.4 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -16.6 A Drain-Source Diode Forward Voltage -- -- -4.0 V trr Reverse Recovery Time -- 110 -- ns Qrr Reverse Recovery Charge -- 0.6 -- µC VGS = 0 V, IS = -22 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 3.85mH, IAS = -16.6A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -22A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2002 Fairchild Semiconductor Corporation Rev. B, August 2002 FQAF22P10 Electrical Characteristics FQAF22P10 Typical Characteristics VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.0 V -5.5 V -5.0 V Bottom : -4.5 V Top : -ID, Drain Current [A] 1 -ID , Drain Current [A] 1 10 10 175℃ 25℃ 0 10 -55℃ 0 10 ※ Notes : 1. VDS = -40V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 -1 0 10 10 1 10 2 10 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.4 -I DR , Reverse Drain Current [A] RDS(on) [ Ω ], Drain-Source On-Resistance 0.5 VGS = - 10V 0.3 VGS = - 20V 0.2 0.1 1 10 0 10 175℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test ※ Note : TJ = 25℃ 0.0 -1 0 10 20 30 40 50 60 70 80 90 100 10 0.2 0.4 0.6 -ID , Drain Current [A] 1.6 1.8 2.0 2.2 2.4 2.6 VDS = -20V 10 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 2000 Crss 1000 500 -V GS , Gate-Source Voltage [V] VDS = -50V 2500 Capacitance [pF] 1.4 12 Ciss 1500 1.2 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 1.0 -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3500 0.8 VDS = -80V 8 6 4 2 ※ Note : ID = -22 A 0 0 -1 10 0 10 1 10 -VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2002 Fairchild Semiconductor Corporation 0 10 20 30 40 50 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. B, August 2002 (Continued) 2.5 1.2 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage FQAF22P10 Typical Characteristics 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μ A 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -11 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 20 Operation in This Area is Limited by R DS(on) 2 10 16 -I D, Drain Current [A] -I D, Drain Current [A] 100 µs 1 ms 10 ms 1 10 DC 0 10 ※ Notes : 12 8 4 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 100 125 150 175 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 0 ※ N o te s : 1 . Z θ J C ( t) = 2 .1 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .2 0 .1 0 .0 5 10 -1 0 .0 2 PDM 0 .0 1 Z θ JC ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] t1 t2 s i n g l e p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2002 Fairchild Semiconductor Corporation Rev. B, August 2002 FQAF22P10 Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL t on VDD VGS RG td(on) VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD DUT -10V tp ©2002 Fairchild Semiconductor Corporation VDD Time VDS (t) ID (t) IAS BVDSS Rev. B, August 2002 FQAF22P10 Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt ©2002 Fairchild Semiconductor Corporation Rev. B, August 2002 FQAF22P10 Package Dimensions TO-3PF 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 2.00 ±0.20 2.00 ±0.20 22.00 ±0.20 1.50 ±0.20 16.50 ±0.20 2.50 ±0.20 0.85 ±0.03 23.00 ±0.20 10 ° 10.00 ±0.20 (1.50) 2.00 ±0.20 14.50 ±0.20 16.50 ±0.20 2.00 ±0.20 4.00 ±0.20 3.30 ±0.20 +0.20 0.75 –0.10 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] +0.20 0.90 –0.10 5.50 ±0.20 26.50 ±0.20 14.80 ±0.20 3.00 ±0.20 ø3.60 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® CoolFET™ FASTr™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1