MMBFJ177LT1G JFET Chopper P−Channel − Depletion Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Symbol Value Unit VDG 25 Vdc VGS(r) −25 Vdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1 DRAIN 3 SOT−23 (TO−236AB) CASE 318−08 STYLE 10 1 2 PD 225 mW 1.8 mW/°C RqJA 556 °C/W TJ, Tstg −55 to +150 °C 1. FR−5 = 1.0 0.75 0.062 in. MARKING DIAGRAM 6Y MG G 1 6Y = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBFJ177LT1G Package Shipping† SOT−23 (Pb−Free) 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 4 1 Publication Order Number: MMBFJ177LT1/D MMBFJ177LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)GSS 30 − Vdc IGSS − 1.0 nAdc VGS(off) 0.8 2.5 Vdc Zero−Gate−Voltage Drain Current (VGS = 0, VDS = 15 Vdc) (Note 2) IDSS 1.5 20 mAdc Drain Cutoff Current (VDS = 15 Vdc, VGS = 10 Vdc) ID(off) − 1.0 nAdc Drain Source On Resistance (ID = 500 mAdc) rDS(on) − 300 W Ciss − 11 pF Crss − 5.5 OFF CHARACTERISTICS Gate−Source Breakdown Voltage (VDS = 0, ID = 1.0 mAdc) Gate Reverse Current (VDS = 0 Vdc, VGS = 20 Vdc) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) ON CHARACTERISTICS Input Capacitance Reverse Transfer Capacitance VDS = 0, VGS = 10 Vdc f = 1.0 MHz 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 MMBFJ177LT1G PACKAGE DIMENSIONS SOT−23 (TO−236AB) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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