ONSEMI MMBV3102LT1G_09

MMBV3102LT1G
Silicon Tuning Diode
This device is designed in the Surface Mount package for general
frequency control and tuning applications. It provides solid−state
reliability in replacement of mechanical tuning methods.
Features
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• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
3
Cathode
Compliant
1
Anode
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Vdc
Forward Current
IF
200
mAdc
Device Dissipation @ TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Junction Temperature
TJ
+125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 8
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
M4CM G
G
1
M4C = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
MMBV3102LT1G
Package
Shipping†
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 4
1
Publication Order Number:
MMBV3102LT1/D
MMBV3102LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
30
−
−
Vdc
IR
−
−
0.1
mAdc
TCC
−
300
−
ppm/°C
Reverse Breakdown Voltage
(IR = 10 mAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc, TA = 25°C)
Diode Capacitance Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
Ct, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Device
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz
CR, Capacitance Ratio
C3/C25
f = 1.0 MHz
Min
Nom
Max
Min
Min
Typ
20
22
25
200
4.5
4.8
MMBV3102LT1
TYPICAL CHARACTERISTICS
20
40
Q, FIGURE OF MERIT (x 1000)
CT , DIODE CAPACITANCE (pF)
36
32
28
24
20
16
12
f = 1.0 MHz
TA = 25°C
8.0
1.0
0.5
2.0 3.0
10
5.0
1.0
0
3.0
6.0
9.0
12
15
18
21
24
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
C T, DIODE CAPACITANCE (NORMALIZED)
I R , REVERSE CURRENT (nA)
3.0
2.0
0.3
0.2
20 30
100
10
VR = 20 Vdc
1.0
0.1
0.01
0.001
-60
5.0
0.5
4.0
0
0.3
TA = 25°C
f = 50 MHz
10
-20
0
+20
+60
+100
1.03
VR = 3.0 Vdc
f = 1.0 MHz
1.02
1.01
1.00
0.99
0.98
0.97
-50
-25
0
+25
+50
+75
TA, AMBIENT TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Leakage Current
Figure 4. Diode Capacitance
NOTES ON TESTING AND SPECIFICATIONS
1. CR is the ratio of CT measured at 3.0 Vdc divided by CT measured at 25 Vdc.
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2
30
1.04
0.96
-75
+140
27
+100
+125
MMBV3102LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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USA/Canada
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Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
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3
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MMBV3102LT1/D