ONSEMI BVSS123LT1G

BSS123LT1G,
BVSS123LT1G
Power MOSFET
170 mAmps, 100 Volts
N−Channel SOT−23
http://onsemi.com
170 mAMPS
100 VOLTS
RDS(on) = 6 W
Features
• AEC−Q101 Qualified and PPAP Capable − BVSS123LT1G
• These Devices are Pb−Free and are RoHS Compliant
N−Channel
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain−Source Voltage
VDSS
100
Vdc
Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
ID
0.17
0.68
Drain Current
− Continuous (Note 1)
− Pulsed (Note 2)
1
Adc
IDM
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 3) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
Max
Unit
1
SA MG
G
2
PD
225
1.8
mW
mW/°C
RqJA
556
°C/W
TJ, Tstg
−55 to +150
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width v 300 ms, Duty Cycle v 2.0%.
3. FR−5 = 1.0 0.75 0.062 in.
SOT−23
CASE 318
STYLE 21
SA
M
G
1
Gate
2
Source
= Device Code
= Date Code
= Pb−Free Package
(*Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 6
1
Publication Order Number:
BSS123LT1/D
BSS123LT1G, BVSS123LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
100
−
−
Vdc
−
−
−
−
15
60
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0, ID = 250 mAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 100 Vdc)
TJ = 25°C
TJ = 125°C
IDSS
Gate−Body Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
−
−
50
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.8
−
2.8
Vdc
Static Drain−Source On−Resistance
(VGS = 10 Vdc, ID = 100 mAdc)
rDS(on)
−
5.0
6.0
W
gfs
80
−
−
mmhos
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
−
20
−
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
−
9.0
−
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
−
4.0
−
pF
td(on)
−
20
−
ns
td(off)
−
40
−
ns
VSD
−
−
1.3
V
mAdc
ON CHARACTERISTICS (Note 4)
Forward Transconductance
(VDS = 25 Vdc, ID = 100 mAdc)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS(4)
Turn−On Delay Time
(VCC = 30 Vdc, IC = 0.28 Adc,
VGS = 10 Vdc, RGS = 50 W)
Turn−Off Delay Time
REVERSE DIODE
Diode Forward On−Voltage
(ID = 0.34 Adc, VGS = 0 Vdc)
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Package
Shipping†
BSS123LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
BSS123LT3G
SOT−23
(Pb−Free)
10000 / Tape & Reel
BVSS123LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
BSS123LT1G, BVSS123LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
1.0
VDS = 10 V
TA = 25°C
1.6
VGS = 10 V
1.4
9V
1.2
I D, DRAIN CURRENT (AMPS)
I D, DRAIN CURRENT (AMPS)
1.8
8V
1.0
7V
0.8
6V
0.6
0.4
5V
0.2
4V
3V
0
0
1.0
2.0 3.0 4.0
5.0
6.0 7.0 8.0
VDS, DRAN SOURCE VOLTAGE (VOLTS)
9.0
125°C
0.6
0.4
0.2
10
0
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
2.2
1.8
VGS = 10 V
ID = 200 mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-60
-20
+20
+60
T, TEMPERATURE (°C)
1.0
2.0 3.0 4.0
5.0
6.0 7.0 8.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
+100
+140
1.2
VDS = VGS
ID = 1.0 mA
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-60
-20
+20
+60
T, TEMPERATURE (°C)
100 ms
10 ms
1 ms
0.1
VGS = 20 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
+100
Figure 4. Temperature versus Gate
Threshold Voltage
1
0.001
0.1
10
1.05
Figure 3. Temperature versus Static
Drain−Source On−Resistance
0.01
9.0
Figure 2. Transfer Characteristics
2.4
ID, DRAIN CURRENT (AMPS)
r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
Figure 1. Ohmic Region
2.0
25°C
-55°C
0.8
10
dc
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
3
1000
+140
BSS123LT1G, BVSS123LT1G
r(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE RESISTANCE
TYPICAL ELECTRICAL CHARACTERISTICS
1000
D = 0.5
100
10
0.2
0.1
0.05
0.02
0.01
1
Single Pulse
0.1
0.00001
0.000001
1 oz. Cu Pad, 5mm thick, 25mm2 area
0.0001
0.001
0.01
0.1
t, TIME (s)
Figure 6. Thermal Response
http://onsemi.com
4
1
10
100
1000
BSS123LT1G, BVSS123LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
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5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BSS123LT1/D