HMC774 v00.1109 GaAs MMIC FUNDAMENTAL MIXER, 7 - 43 GHz Typical Applications Features The HMC774 is ideal for: Passive: No DC Bias Required • Point-to-Point Radios High Input IP3: +22 dBm • Point-to-Multi-Point Radios & VSAT High LO/RF Isolation: 35 dB • Test Equipment & Sensors Wide IF Bandwidth: DC - 10 GHz • Military End-Use Upconversion & Downconversion Applications MIXERS - DOUBLE-BALANCED - CHIP 4 Die Size: 1.36 x 0.96 x 0.1 mm Functional Diagram General Description The HMC774 is a general purpose double balanced mixer chip that can be used as an upconverter or downconverter between 7 and 43 GHz. This mixer requires no external components or matching circuitry. The HMC774 provides excellent LO to RF and LO to IF isolation due to optimized balun structures. The mixer operates with LO drive levels of +13 dBm. The HMC774 wideband mixer exhibits consistent conversion gain and compression across its bandwidth. The HMC774 is also available in SMT format as the HMC774LC3B. Electrical Specifi cations, TA = +25° C, IF = 0.5 GHz, LO = +13 dBm* Parameter Min. Frequency Range, RF & LO Frequency Range, IF Conversion Loss Typ. Min. Typ. 7 - 22 22 - 43 DC - 10 DC - 10 9 LO to RF Isolation Max. 13 10 35 Max. GHz GHz 13 dB 38 dB LO to IF Isolation 20 30 25 40 dB RF to IF Isolation 7 10 14 20 dB IP3 (Input) 20 22 dBm IP2 (Input) 45 48 dBm 1 dB Gain Compression (Input) 12 13 dBm * Unless otherwise noted, all measurements performed as downconverter, IF = 0.5 GHz, LO = +13 dBm 4 - 90 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC774 v00.1109 GaAs MMIC FUNDAMENTAL MIXER, 7 - 43 GHz Conversion Gain vs. Temperature Isolation 0 -10 -8 -12 +25 C +85 C -55 C -16 -20 -30 LO/RF RF/IF LO/IF -50 -20 -60 6 10 14 18 22 26 30 34 38 42 46 6 10 14 18 RF FREQUENCY (GHz) 26 30 34 38 42 46 Return Loss 0 0 -4 RETURN LOSS (dB) CONVERSION GAIN (dB) 22 FREQUENCY (GHz) Conversion Gain vs. LO Drive -8 -12 11 dBm 13 dBm 15 dBm 17 dBm -16 -20 -5 -10 -15 RF LO -20 6 10 14 18 22 26 30 34 38 42 46 6 10 14 18 RF FREQUENCY (GHz) 22 26 30 34 38 42 46 38 42 46 FREQUENCY (GHz) Upconverter Performance Conversion Gain vs. LO Drive IF Bandwidth 0 0 CONVERSION GAIN (dB) -4 RESPONSE (dB) 4 -40 -8 -12 -16 Conversion Gain IF Return Loss -20 -24 -4 MIXERS - DOUBLE-BALANCED - CHIP -4 ISOLATION (dB) CONVERSION GAIN (dB) 0 -8 -12 11 dBm 13 dBm 15 dBm 17 dBm -16 -20 0 2 4 6 8 IF FREQUENCY (GHz) 10 12 6 10 14 18 22 26 30 34 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 91 HMC774 v00.1109 GaAs MMIC FUNDAMENTAL MIXER, 7 - 43 GHz 35 35 30 30 25 25 20 15 11 dBm 13 dBm 15 dBm 17 dBm 10 5 20 15 +25 C +85 C -55 C 10 5 0 0 6 10 14 18 22 26 30 34 38 42 46 6 10 14 RF FREQUENCY (GHz) 60 60 50 50 IP2 (dBm) 70 40 26 30 34 38 42 46 38 42 46 40 30 11 dBm 13 dBm 15 dBm 17 dBm 20 22 Input IP2 vs. Temperature [1] 70 30 18 RF FREQUENCY (GHz) Input IP2 vs. LO Drive [1] IP2 (dBm) +25 C +85 C -55 C 20 10 10 6 10 14 18 22 26 30 34 38 42 46 6 10 14 RF FREQUENCY (GHz) 18 22 26 30 34 RF FREQUENCY (GHz) Input P1dB vs. Temperature 20 16 P1dB (dBm) MIXERS - DOUBLE-BALANCED - CHIP 4 Input IP3 vs. Temperature [1] IP3 (dBm) IP3 (dBm) Input IP3 vs. LO Drive [1] 12 +25 C +85 C -55 C 8 4 0 6 10 14 18 22 26 30 34 38 42 46 RF FREQUENCY (GHz) [1] Two-tone input power = -5 dBm each tone, 1 MHz spacing. 4 - 92 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC774 v00.1109 GaAs MMIC FUNDAMENTAL MIXER, 7 - 43 GHz MxN Spurious Outputs Absolute Maximum Ratings RF / IF Input 21 dBm 4 LO Drive 27 dBm xx xx Channel Temperature 150 °C 43 xx Continuous Pdiss (Ta = 85 °C) (derate 2.9 mW/°C above 85 °C) 189 mW Thermal Resistance (junction to die bottom) 343 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C 0 1 2 3 0 xx 10 39 1 5 0 37 2 30 49 47 55 68 3 xx 74 62 45 63 4 xx xx xx 77 71 RF = 17.5 GHz @ -10 dBm LO = 18.0 GHz @ +15 dBm All values in dBc below the IF output power level. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 MIXERS - DOUBLE-BALANCED - CHIP nLO mRF 4 - 93 HMC774 v00.1109 GaAs MMIC FUNDAMENTAL MIXER, 7 - 43 GHz Pad Descriptions MIXERS - DOUBLE-BALANCED - CHIP 4 4 - 94 Pad Number Function Description 1 LO This pin is DC coupled and matched to 50 Ohms. 2 RF This pin is DC coupled and matched to 50 Ohms. IF This pin is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. For operation to DC, this pin must not source or sink more than 2 mA of current or part non-function and possible part failure will result. 3 Interface Schematic Assembly Diagram For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC774 v00.1109 GaAs MMIC FUNDAMENTAL MIXER, 7 - 43 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC 3 mil Ribbon Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on RF, LO & IF ports. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ±250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting 0.102mm (0.004”) Thick GaAs MMIC 3 mil Ribbon Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 MIXERS - DOUBLE-BALANCED - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 4 - 95