HMC591 v02.0109 LINEAR & POWER AMPLIFIERS - CHIP 3 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Typical Applications Features The HMC591 is ideal for use as a power amplifier for: Saturated Output Power: +34 dBm @ 24% PAE • Point-to-Point Radios Output IP3: +43 dBm • Point-to-Multi-Point Radios Gain: 23 dB • Test Equipment & Sensors DC Supply: +7.0 V @ 1340 mA • Military End-Use 50 Ohm Matched Input/Output • Space 2.47 mm x 2.49 mm x 0.1 mm Functional Diagram General Description The HMC591 is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier which operates from 6 to 10 GHz. This amplifier die provides 23 dB of gain and +34 dBm of saturated power, at 24% PAE from a +7.0V supply. Output IP3 is +43 dBm typical. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 940 mA, to yield +43 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 1340 mA, to yield +33 dBm Output P1dB. Electrical Specifi cations, TA = +25° C, Vdd = +7V, Idd = 1340 mA[1] Parameter Min. Frequency Range Typ. Max. Min. 6 - 10 Gain 20 Max. 23 dB dB/ °C Input Return Loss 12 14 dB Output Return Loss 11 10 dB 33.5 dBm 34 dBm 43 43 dBm 1340 1340 mA 30 Saturated Output Power (Psat) Output Third Order Intercept (IP3)[2] Supply Current (Idd) 33 33.5 30.5 [1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical. [2] Measurement taken at 7V @ 940mA, Pin / Tone = -15 dBm 3 - 78 GHz 0.05 Output Power for 1 dB Compression (P1dB) 20 Units 0.05 Gain Variation Over Temperature 23 Typ. 6.8 - 9 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591 v02.0109 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Gain vs. Temperature 30 34 25 32 20 30 28 10 S21 S11 S22 5 0 -5 24 22 20 -10 18 -15 16 -20 14 -25 3 26 +25C +85C -40C 12 4 5 6 7 8 9 10 11 12 6 6.5 7 FREQUENCY (GHz) Input Return Loss vs. Temperature 8.5 9 9.5 10 0 +25C +85C -40C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 8 Output Return Loss vs. Temperature 0 -10 -15 -20 -10 -15 +25C +85C -40C -20 -25 -25 4 5 6 7 8 9 10 11 12 4 5 6 FREQUENCY (GHz) 8 9 10 11 12 9 9.5 10 Psat vs. Temperature 36 34 34 PSAT (dBm) 36 32 +25C +85C -55C 30 7 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dBm) 7.5 FREQUENCY (GHz) 28 LINEAR & POWER AMPLIFIERS - CHIP 15 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss 32 +25C +85C -55C 30 28 26 26 6 6.5 7 7.5 8 8.5 FREQUENCY (GHz) 9 9.5 10 6 6.5 7 7.5 8 8.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 79 HMC591 v02.0109 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Psat vs. Current 36 34 34 32 940 mA 1140 mA 1340 mA 30 32 940 mA 1140 mA 1340 mA 30 28 26 26 6 6.5 7 7.5 8 8.5 9 9.5 10 6 6.5 7 FREQUENCY (GHz) 8 8.5 9 9.5 10 Power Compression @ 8 GHz, 7V @ 1340 mA 35 Pout(dBm), GAIN (dB), PAE(%) 48 44 IP3 (dBm) 7.5 FREQUENCY (GHz) Output IP3 vs. Temperature 7V @ 940 mA, Pin/Tone = -15 dBm 40 +25C +85C -55C 36 32 28 6 6.5 7 7.5 8 8.5 9 9.5 25 20 15 10 5 0 -14 10 Pout Gain PAE 30 -9 -4 FREQUENCY (GHz) 70 70 IM3 (dBc) 90 50 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz -16 -12 -8 6 11 16 Output IM3, 7V @ 1340 mA 90 10 -20 1 INPUT POWER (dBm) Output IM3, 7V @ 940 mA 30 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz 50 30 -4 Pin/Tone (dBm) 3 - 80 PSAT (dBm) 36 28 IM3 (dBc) LINEAR & POWER AMPLIFIERS - CHIP 3 P1dB (dBm) P1dB vs. Current 0 4 8 10 -20 -16 -12 -8 -4 0 Pin/Tone (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 8 HMC591 v02.0109 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Gain & Power vs. Supply Voltage @ 8 GHz Gain & Power vs. Supply Current @ 8 GHz 38 34 GAIN P1dB Psat 30 26 22 18 6.5 7 34 26 22 18 940 7.5 3 GAIN P1dB Psat 30 1140 Vdd SUPPLY VOLTAGE (V) 1340 Idd SUPPLY CURRENT (mA) Reverse Isolation vs. Temperature, 7V @ 1340 mA Power Dissipation 10 0 ISOLATION (dB) -20 POWER DISSIPATION (W) -10 +25C +85C -40C -30 -40 -50 -60 9 8 6GHz 7GHz 8GHz 9GHz 10GHz 7 6 -70 -80 6 6.5 7 7.5 8 8.5 9 9.5 10 5 -14 -10 Absolute Maximum Ratings -6 -2 2 6 10 14 INPUT POWER (dBm) FREQUENCY (GHz) Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +8 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg) -2 to 0 Vdc +6.5 1355 RF Input Power (RFIN)(Vdd = +7.0 Vdc) +15 dBm +7.0 1340 Channel Temperature 175 °C +7.5 1325 Continuous Pdiss (T= 85 °C) (derate 117.6 mW/°C above 85 °C) 10.59 W Thermal Resistance (channel to die bottom) 8.5 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C LINEAR & POWER AMPLIFIERS - CHIP GAIN (dB), P1dB (dBm), Psat(dBm) GAIN (dB), P1dB (dBm), Psat(dBm) 38 Note: Amplifi er will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 1340 mA at +7.0V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 81 HMC591 v02.0109 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Outline Drawing LINEAR & POWER AMPLIFIERS - CHIP 3 Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 - 82 NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE ± .002 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591 v02.0109 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Pad Descriptions Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 3 - 5, 7, 8 Vdd 1-5 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required. 6 RFOUT This pad is AC coupled and matched to 50 Ohms. 9 Vgg Gate control for amplifier. Adjust to achieve Idd of 1340 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 0.1 μF are required. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 LINEAR & POWER AMPLIFIERS - CHIP Pad Number 3 - 83 HMC591 v02.0109 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Assembly Diagram LINEAR & POWER AMPLIFIERS - CHIP 3 3 - 84 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC591 v02.0109 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6 - 10 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. 3 LINEAR & POWER AMPLIFIERS - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 85