HMC592 v01.0107 AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz Typical Applications Features The HMC592 is ideal for use as a power amplifier for: Saturated Output Power: +31 dBm @ 21% PAE • Point-to-Point Radios Output IP3: +38 dBm • Point-to-Multi-Point Radios Gain: 19 dB • Test Equipment & Sensors DC Supply: +7.0 V @ 750 mA • Military End-Use 50 Ohm Matched Input/Output • Space Die Size: 2.47 mm x 1.17 mm x 0.1 mm Functional Diagram General Description The HMC592 is a high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifier which operates from 10 to 13 GHz. This amplifier die provides 19 dB of gain and +31 dBm of saturated power, at 21% PAE from a +7.0V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into MultiChip-Modules (MCMs). All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 400 mA, to yield +38 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 750 mA, to yield +31 dBm Output P1dB. Electrical Specifications, TA = +25° C, Vdd = +7V, Idd = 750 mA* Parameter Min. Frequency Range Typ. Max. 10 - 13 Gain 16 GHz 19 dB 0.05 dB/ °C Input Return Loss 10 dB Output Return Loss 12 dB 31 dBm 31.2 dBm Gain Variation Over Temperature Output Power for 1 dB Compression (P1dB) 28 Saturated Output Power (Psat) Output Third Order Intercept (IP3)[2] Supply Current (Idd) 38 750 dBm 800 [1] Adjust Vgg between -2 to 0V to achieve Idd= 750 mA typical. [2] Measurement taken at 7V @ 400mA, Pin / Tone = -15 dBm 1 - 230 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC592 v01.0107 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz 26 20 24 15 22 10 S21 S11 S22 0 -5 20 18 16 14 -10 12 -15 10 -20 8 -25 +25C +85C -55C 6 7 8 9 10 11 12 13 14 15 9 9.5 10 FREQUENCY (GHz) 0 -5 -5 -10 -15 +25C +85C -55C 11.5 12 12.5 13 -10 -15 +25C +85C -55C -20 -25 -25 8 9 10 11 12 13 14 8 9 10 FREQUENCY (GHz) 32 31 31 30 30 Psat (dBm) 33 32 29 +25C +85C -55C 27 12 13 14 Psat vs. Temperature 33 28 11 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dBm) 11 Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) Input Return Loss vs. Temperature -20 10.5 FREQUENCY (GHz) AMPLIFIERS - CHIP 28 25 GAIN (dB) RESPONSE (dB) 30 5 1 Gain vs. Temperature Broadband Gain & Return Loss 29 28 26 26 25 25 24 24 23 +25C +85C -55C 27 23 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) 12 12.5 13 9 9.5 10 10.5 11 11.5 12 12.5 13 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 231 HMC592 v01.0107 P1dB vs. Current Psat vs. Current 33 33 32 32 31 31 30 30 Psat (dBm) P1dB (dBm) AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz 29 28 27 400mA 500mA 600mA 700mA 750mA 26 25 29 28 26 25 24 24 23 23 9 9.5 10 10.5 11 11.5 12 12.5 13 9 FREQUENCY (GHz) Pout(dBm), GAIN (dB), PAE(%) 40 IP3 (dBm) 38 36 34 32 +25C +85C -55C 30 28 26 24 9 9.5 10 10.5 11 11.5 12 12.5 30 25 11.5 12 12.5 13 Pout Gain PAE 15 10 5 0 -14 -12 -10 -8 -6 -4 -2 13 0 2 4 6 8 10 12 14 16 INPUT POWER (dBm) Output IM3, 7V @ 400 mA Output IM3, 7V @ 750 mA 90 90 80 80 70 70 60 60 IM3 (dBc) IM3 (dBc) 11 20 FREQUENCY (GHz) 50 9 GHz 10 GHz 11 GHz 12 GHz 13 GHz 9 GHz 10 GHz 11 GHz 12 GHz 13 GHz 50 40 30 20 10 10 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 Pin/Tone (dBm) 1 - 232 10.5 35 42 20 10 Power Compression @ 8 GHz, 7V @ 750 mA 44 30 9.5 FREQUENCY (GHz) Output IP3 vs. Temperature 7V @ 400 mA, Pin/Tone = -15 dBm 40 400mA 500mA 600mA 700mA 750mA 27 0 2 4 6 8 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 Pin/Tone (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 6 8 HMC592 v01.0107 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz Gain & Power vs. Supply Current @ 8 GHz Gain & Power vs. Supply Voltage @ 8 GHz 32 28 Gain P1dB Psat 24 20 16 12 400 450 500 550 600 650 700 32 28 20 16 12 6.5 750 Idd SUPPLY CURRENT (mA) 7 7.5 Vdd SUPPLY VOLTAGE (Vdc) Power Dissipation Reverse Isolation vs. Temperature 0 6 5.75 -10 Power Dissipation (W) 5.5 -20 ISOLATION (dB) Gain P1dB Psat 24 AMPLIFIERS - CHIP 36 GAIN (dB), P1dB (dBm), Psat(dBm) GAIN (dB), P1dB (dBm), Psat(dBm) 36 1 +25C +85C -55C -30 -40 -50 -60 5.25 5 4.75 4.5 4.25 9 GHz 10 GHz 11 GHz 12 GHz 13 GHz 4 3.75 3.5 -70 3.25 -80 9 9.5 10 10.5 11 11.5 FREQUENCY (GHz) 12 12.5 13 3 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 233 HMC592 v01.0107 AMPLIFIERS - CHIP 1 Typical Supply Current vs. Vdd Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg) +8 Vdc -2.0 to 0 Vdc Vdd (V) Idd (mA) +6.5 757 Outline Drawing RF Input Power (RFin)(Vdd = +7.0 Vdc) +15 dBm +7.0 750 Channel Temperature 175 °C +7.5 745 Continuous Pdiss (T= 85 °C) (derate 62.7 mW/°C above 85 °C) 5.64 W Thermal Resistance (channel to die bottom) 15.94 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Die Packaging Information [1] Standard Alternate GP-1 [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 234 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 750 mA at +7.0V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE ± .002 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC592 v01.0107 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2, 4, 6 Vgg 1-3 Gate control for amplifier. Adjust to achieve Idd of 750 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 0.1 μF are required. 3, 5, 7 Vdd 1-3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required. 8 RFOUT This pad is AC coupled and matched to 50 Ohms. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com AMPLIFIERS - CHIP 1 Pad Descriptions 1 - 235 HMC592 v01.0107 Assembly Diagram AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz 1 - 236 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC592 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10.0 - 13.0 GHz 1 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. AMPLIFIERS - CHIP v01.0107 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 237