HMC486 v01.0106 AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 7.0 - 9.0 GHz Typical Applications Features The HMC486 is ideal for use as a power amplifier for: Saturated Output Power: +34 dBm @ 24% PAE • Point-to-Point Radios Output IP3: +40 dBm • Point-to-Multi-Point Radios Gain: 26 dB • Test Equipment & Sensors DC Supply: +7.0 V @ 1300 mA • Military End-Use 50 Ohm Matched Input/Output • Space 2.51 mm x 2.51 mm x 0.1 mm Functional Diagram General Description The HMC486 is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier which operates from 7 to 9 GHz. This amplifier die provides 26 dB of gain, +34 dBm of saturated power and 24% PAE from a +7.0 V supply voltage. Output IP3 is +40 dBm typical. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25° C, Vdd = +7V, Idd = 1300 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. 7-8 22 Gain Variation Over Temperature 25 0.04 23 0.06 Typ. Max. GHz 26 dB 0.04 0.06 dB/ °C Input Return Loss 11 12 dB Output Return Loss 8 6 dB 33.5 dBm 33.5 34 dBm 40 38 dBm Output Power for 1 dB Compression (P1dB) 30 Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) 33 30.5 6.5 7 dB 1300 1300 mA * Adjust Vgg between -2 to 0V to achieve Idd= 1300 mA typical. 1 - 130 Units 8-9 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC486 v01.0106 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 7.0 - 9.0 GHz Broadband Gain & Return Loss 1 Gain vs. Temperature 32 25 28 15 26 10 GAIN (dB) RESPONSE (dB) 30 20 S21 S11 S22 5 24 22 20 18 0 +25C +85C -55C 16 -5 14 -10 12 10 -15 4 5 6 7 8 9 10 6 11 6.5 7 7.5 8 Input Return Loss vs. Temperature 9 9.5 10 Output Return Loss vs. Temperature 0 0 +25C +85C -55C RETURN LOSS (dB) -2 RETURN LOSS (dB) 8.5 FREQUENCY (GHz) FREQUENCY (GHz) AMPLIFIERS - CHIP 34 30 +25C +85C -55C -5 -10 -4 -6 -8 -15 -10 6 6.5 7 7.5 8 8.5 9 9.5 10 6 6.5 7 FREQUENCY (GHz) 36 36 35 35 34 34 33 33 32 31 30 +25C +85C -55C 28 8 8.5 9 9.5 10 9 9.5 10 Psat vs. Temperature Psat (dBm) P1dB (dBm) P1dB vs. Temperature 29 7.5 FREQUENCY (GHz) 32 31 30 +25C +85C -55C 29 28 27 27 26 26 6 6.5 7 7.5 8 8.5 FREQUENCY (GHz) 9 9.5 10 6 6.5 7 7.5 8 8.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 131 HMC486 v01.0106 Output IP3 vs. Temperature Power Compression @ 8 GHz 36 44 32 Pout (dBm), GAIN (dB), PAE (%) 46 42 OIP3 (dBm) 40 38 36 34 32 +25C +85C -55C 30 28 26 6 6.5 7 7.5 8 8.5 9 9.5 28 24 20 16 12 8 Pout (dBm) Gain (dB) PAE (%) 4 0 -10 -8 10 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) Gain, Power & OIP3 vs. Supply Voltage @ 8 GHz Gain, Power & OIP3 vs. Supply Current @ 8 GHz 42 40 38 36 34 32 Gain P1dB Psat OIP3 30 28 26 24 22 6.5 7 7.5 Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) FREQUENCY (GHz) Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 7.0 - 9.0 GHz 10 12 14 16 42 40 38 36 34 32 Gain P1dB Psat OIP3 30 28 26 24 22 700 800 900 1000 1100 1200 1300 Idd Supply Current (mA) Vdd Supply Voltage (Vdc) Noise Figure vs. Temperature Reverse Isolation vs. Temperature 12 0 11 -10 9 ISOLATION (dB) NOISE FIGURE (dB) 10 8 7 6 5 4 2 +25C +85C -55C -30 -40 -50 +25C +85C -55C 3 -20 -60 1 0 -70 6 6.5 7 7.5 8 8.5 FREQUENCY (GHz) 1 - 132 9 9.5 10 6 6.5 7 7.5 8 8.5 9 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9.5 10 HMC486 POWER DISSIPATION (W) 10.5 Max Pdiss @ +85C 9.5 9 8.5 8 8 GHz 7.5 7 -10 -8 -6 -4 -2 0 1 Absolute Maximum Ratings Power Dissipation 10 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 7.0 - 9.0 GHz 2 4 6 8 10 12 14 16 18 Drain Bias Voltage (Vdd) +8 Vdc Gate Bias Voltage (Vgg) -2.0 to 0 Vdc RF Input Power (RFin)(Vdd = +7.0 Vdc) +15 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 105 mW/°C above 85 °C) 9.45 W Thermal Resistance (channel to die bottom) 9.5 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ESD Sensitivity (HBM) Class 1A INPUT POWER (dBm) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS AMPLIFIERS - CHIP v01.0106 Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +6.5 1305 +7.0 1300 +7.5 1295 Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 1300 mA at +7.0V For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 133 HMC486 v01.0106 Outline Drawing AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 7.0 - 9.0 GHz Die Packaging Information [1] Standard Alternate GP-1 [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 134 NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE ± .002 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC486 v01.0106 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 7.0 - 9.0 GHz Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms from 7 - 9 GHz. 2 - 4, 6, 7 Vdd 1-5 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required. 5 RFOUT This pad is AC coupled and matched to 50 Ohms from 7 - 9 GHz. 8 Vgg Gate control for amplifier. Adjust to achieve Idd of 1300 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 0.1 μF are required. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com AMPLIFIERS - CHIP 1 Pad Descriptions 1 - 135 HMC486 v01.0106 Assembly Diagram AMPLIFIERS - CHIP 1 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 7.0 - 9.0 GHz 1 - 136 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC486 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 7.0 - 9.0 GHz 1 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. AMPLIFIERS - CHIP v01.0106 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 137