MCH6001 Ordering number : ENA1601 SANYO Semiconductors DATA SHEET MCH6001 NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ (f=1GHz). High cut-off frequency : fT=16GHz typ (VCE=5V). High gain : |S21e|2=16dB typ (f=1GHz). Composite type with 2 RF transistor MCH4020 in one package facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Total Dissipation Symbol Conditions Ratings VCBO VCEO VEBO IC PC Junction Temperature PT Tj Storage Temperature Tstg Unit 15 V 8 V 2 V 150 mA When mounted on glass epoxy substrate 1unit 400 mW When mounted on glass epoxy substrate 600 mW 150 °C -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Symbol Conditions Ratings min typ DC Current Gain ICBO IEBO hFE VCE=5V, IC=50mA 60 Gain-Bandwidth Product fT VCE=5V, IC=50mA 13 Emitter Cutoff Current max VCB=5V, IE=0A VEB=1V, IC=0A Unit 1.0 μA 1.0 μA 150 16 Marking : GT GHz Continued on next page. Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. 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To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network N1809AB TK IM TC-00002075 No. A1601-1/4 MCH6001 Continued from preceding page. Parameter Symbol Forward Transfer Gain |S21e| Noise Figure NF 2 min 16 4 1 0 t o 0.02 2.1 1.6 5 4 1.8 dB 1 : Base1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Collector1 GT 0.15 5 dB 1.2 6 6 Unit max Marking unit : mm (typ) 7022A-019 2.0 typ VCE=5V, IC=50mA, f=1GHz VCE=1V, IC=10mA, f=1GHz Package Dimensions 0.25 Ratings Conditions 2 3 2 3 0.65 0.3 0.07 0.85 0.25 Top view 1 1 2 3 1 : Base1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Collector1 6 5 4 SANYO : MCPH6 Electrical Connection C1 E2 B2 B1 E1 C2 IC -- VCE 140 IC -- VBE 150 100 0.9mA 80 0.6mA 60 40 0.3mA 120 90 5V 1.2mA VCE=1V Collector Current, IC -- mA 1.5mA 120 Collector Current, IC -- mA (Top view) 60 30 20 0 IB=0mA 0 2 4 6 Collector-to-Emitter Voltage, VCE -- V 8 IT13901 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 IT13902 No. A1601-2/4 MCH6001 hFE -- IC VCE=5V 100 1V 7 5 3 2 1.0 2 3 5 7 2 10 3 5 7 100 2 Collector Current, IC -- mA f=1MHz 7 5 3 2 0.1 3 2 3 5 7 2 1.0 3 5 Collector-to-Base Voltage, VCB -- V |S21e|2 -- I IT13903 Cob -- VCB 3 Cre -- VCB 1.0 Reverse Transfer Capacitance, Cre -- pF DC Current Gain, hFE 2 7 10 IT13904 C 20 Forward Transfer Gain, |S21e|2 -- dB Output Capacitance, Cob -- pF f=1MHz 2 1.0 7 5 3 0.1 2 3 5 7 2 1.0 3 5 Collector-to-Base Voltage, VCB -- V 10 5 0 1.0 7 10 IT13905 4 7 3 5 7 2 10 3 5 7 100 2 IT15151 NF -- IC f=1GHz 5 3 Noise Figure, NF -- dB Gain-Bandwidth Product, fT -- GHz 2 Collector Current, IC -- mA fT -- IC 100 15 2 10 7 5 3 3 2 VC E=1V 1 5V 2 1.0 1.0 2 3 5 7 2 10 3 5 Collector Current, IC -- mA PT, PC -- Ta 700 7 100 2 IT15152 0 1.0 2 3 5 7 10 2 3 Collector Current, IC -- mA 5 7 100 IT13908 Collector Dissipation, PT, PC -- mW When mounted on glass epoxy substrate 600 500 P TT ot 400 al di ss ip P ati C1 un on it 300 200 100 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15153 No. A1601-3/4 MCH6001 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2009. Specifications and information herein are subject to change without notice. PS No. A1601-4/4