SANYO ENA1114

55GN01MA
Ordering number : ENA1114
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
55GN01MA
UHF Wide-band Low-noise
Amplifier Applications
Features
•
•
High cut-off frequency : fT= 5.5GHz typ.
High gain : ⏐S21e⏐2 =10dB typ (f=1GHz).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Symbol
Conditions
Ratings
Unit
VCBO
VCEO
20
V
10
V
VEBO
IC
3
V
70
mA
Junction Temperature
PC
Tj
Storage Temperature
Tstg
When mounted on ceramic substrate (250mm2✕0.8mm)
400
mW
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Symbol
Conditions
Ratings
min
typ
ICBO
IEBO
VCB=10V, IE=0A
Emitter Cutoff Current
DC Current Gain
hFE
VCE=5V, IC=10mA
100
Gain-Bandwidth Product
fT1
fT2
VCE=3V, IC=5mA
3.0
VCE=5V, IC=20mA
5.5
Output Capacitance
Cob
VCB=10V, f=1MHz
1.0
Reverse Transfer Capacitance
Cre
0.6
Forward Transfer Gain
2
⏐S21e⏐
NF
VCB=10V, f=1MHz
VCE=5V, IC=20mA, f=1GHz
Noise Figure
VEB=2V, IC=0A
VCE=3V, IC=5mA, f=1GHz, Zo=50Ω
7
Unit
max
0.1
μA
1
μA
180
4.5
GHz
GHz
1.3
10
1.9
pF
pF
dB
2.8
dB
Marking : ZD
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
O2908AB MS IM TC-00001677 No. A1114-1/6
55GN01MA
Package Dimensions
0.3
0.2
0.15
3
0 to 0.1
1.25
0.425
2.1
0.425
unit : mm (typ)
7023-009
1
2
0.65 0.65
0.3
0.6
0.9
2.0
1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
IC -- VCE
50
40
70
Collector Current, IC -- mA
Collector Current, IC -- mA
VCE=5V
A
0.30m
45
0.25mA
35
0.20mA
30
IC -- VBE
80
25
0.15mA
20
0.10mA
15
0.05mA
10
60
50
40
30
20
10
5
IB=0mA
0
0
1
2
3
4
5
6
7
8
9
Collector-to-Emitter Voltage, VCE -- V
0
10
0
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
3
0.2
IT06252
f T -- IC
10
VCE=5V
VCE=5V
Gain-Bandwidth Product, f T -- GHz
DC Current Gain, hFE
2
100
7
5
3
5
7 1.0
2
3
5
7
10
2
Collector Current, IC -- mA
3
5
7 100
IT06254
1.2
IT06253
7
5
3
2
1.0
1.0
2
3
5
7
10
2
3
Collector Current, IC -- mA
5
7 100
IT05670
No. A1114-2/6
55GN01MA
Cob -- VCB
5
Reverse Transfer Capacitance, Cre -- pF
2
1.0
7
2
3
5
7 1.0
2
3
5
7 10
2
Collector-to-Base Voltage, VCB -- V
Noise Figure, NF -- dB
2.5
2.0
1.5
2
3
5
7
Collector Current, IC -- mA
10
IT05674
PC -- Ta
450
3
2
1.0
7
5
2
3
5
7 1.0
2
3
5
7
2
10
Collector-to-Base Voltage, VCB -- V
⏐S21e⏐2 -- IC
IT05672
VCE=3V
f=1GHz
Zo=50Ω
1.0
1.0
f=1MHz
3
0.1
5
NF -- IC
3.0
12
3
IT05673
VCE=5V
f=1GHz
10
8
6
4
2
1.0
2
3
5
7
10
2
3
Collector Current, IC -- mA
5
7 100
IT05671
When mounted on ceramic substrate
(250mm2✕0.8mm)
400
Collector Dissipation, PC -- mW
3
Forward Transfer Gain, ⏐S21e⏐2 -- dB
Output Capacitance, Cob -- pF
3
5
0.1
Cre -- VCB
5
f=1MHz
350
300
250
200
150
100
50
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT06251
No. A1114-3/6
55GN01MA
S Parameters (Common emitter)
VCE=5V, IC=5mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.830
--43.97
13.127
147.99
0.038
67.23
0.872
--22.91
200
0.694
--77.62
10.294
125.90
0.060
54.39
0.700
--35.46
400
0.540
--117.92
6.419
101.76
0.081
48.13
0.501
--44.05
600
0.481
--140.06
4.518
88.76
0.095
49.82
0.424
--46.75
800
0.461
--155.07
3.503
78.58
0.111
52.28
0.393
--49.83
1000
0.451
--165.52
2.877
70.19
0.128
54.96
0.381
--53.19
1200
0.445
--174.34
2.452
62.66
0.146
56.81
0.375
--57.17
1400
0.445
178.04
2.147
56.03
0.168
58.15
0.377
--61.74
1600
0.445
171.32
1.918
49.61
0.189
58.43
0.382
--66.69
1800
0.445
164.86
1.737
43.71
0.211
58.38
0.386
--71.55
2000
0.449
158.60
1.595
38.11
0.237
58.17
0.390
--76.75
2200
0.452
152.58
1.467
32.97
0.265
57.40
0.396
--82.35
2400
0.450
146.68
1.363
28.29
0.289
56.02
0.399
--87.23
2600
0.453
141.54
1.274
24.12
0.315
55.05
0.402
--92.59
2800
0.462
136.46
1.198
20.67
0.346
53.73
0.407
--98.30
3000
0.472
131.80
1.143
17.49
0.377
51.74
0.405
--104.52
VCE=5V, IC=10mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.684
--64.81
20.386
135.46
0.033
61.46
0.746
--32.56
200
0.537
--103.63
13.552
113.26
0.046
54.93
0.530
--42.92
400
0.442
--139.55
7.523
93.84
0.066
56.90
0.365
--45.97
600
0.418
--156.47
5.145
83.67
0.087
60.27
0.318
--46.89
800
0.415
--167.86
3.934
75.21
0.109
62.42
0.302
--49.45
1000
0.412
--175.67
3.211
67.90
0.131
63.30
0.299
--52.76
1200
0.411
177.29
2.725
61.28
0.155
63.24
0.299
--56.97
1400
0.415
171.08
2.375
55.21
0.179
62.62
0.304
--61.81
1600
0.418
165.63
2.121
49.25
0.203
61.52
0.311
--66.89
1800
0.419
159.97
1.918
43.74
0.228
60.43
0.315
--71.68
2000
0.424
154.44
1.760
38.40
0.254
58.94
0.320
--76.83
2200
0.429
148.97
1.619
33.44
0.281
57.20
0.326
--82.56
2400
0.427
143.60
1.506
28.88
0.304
55.14
0.329
--86.87
2600
0.431
139.13
1.408
24.76
0.329
53.64
0.334
--92.16
2800
0.441
134.54
1.327
21.16
0.358
51.96
0.339
--97.67
3000
0.451
130.40
1.266
17.89
0.386
49.84
0.338
--103.91
No. A1114-4/6
55GN01MA
S Parameters (Common emitter)
VCE=5V, IC=20mA, ZO=50Ω
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
0.527
--90.16
26.224
123.28
0.026
59.94
0.598
--40.43
0.438
--127.59
15.340
104.33
0.037
60.44
0.396
--45.63
400
0.399
--155.68
8.065
89.00
0.060
65.69
0.282
--44.29
600
0.393
--167.56
5.453
80.60
0.084
67.76
0.256
--44.57
Freq(MHz)
⏐S11⏐
100
200
800
0.397
--176.18
4.149
73.14
0.109
68.31
0.250
--47.52
1000
0.398
177.84
3.379
66.41
0.134
67.71
0.252
--51.39
1200
0.401
172.13
2.862
60.19
0.159
66.77
0.255
--55.96
1400
0.406
166.95
2.491
54.45
0.186
65.32
0.262
--61.04
1600
0.411
162.22
2.222
48.82
0.210
63.20
0.270
--66.49
1800
0.414
157.06
2.008
43.51
0.235
61.52
0.275
--71.29
2000
0.419
152.07
1.840
38.32
0.261
59.51
0.282
--76.53
2200
0.425
146.91
1.693
33.45
0.288
57.59
0.289
--82.27
2400
0.424
141.87
1.574
29.00
0.312
55.28
0.293
--86.65
2600
0.429
137.61
1.472
24.92
0.336
53.54
0.298
--91.76
2800
0.438
133.38
1.387
21.39
0.365
51.63
0.304
--97.07
3000
0.449
129.47
1.321
18.07
0.392
49.39
0.303
--103.60
VCE=5V, IC=30mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.461
--105.76
28.111
117.59
0.023
60.62
0.521
--42.88
200
0.412
--139.73
15.717
100.76
0.034
64.40
0.344
--44.71
400
0.393
--162.64
8.133
87.05
0.058
69.84
0.255
--41.81
600
0.394
--172.24
5.483
79.25
0.084
70.67
0.237
--42.42
800
0.400
--179.58
4.169
72.10
0.110
70.59
0.235
--45.80
1000
0.401
175.18
3.392
65.52
0.135
69.45
0.239
--49.94
1200
0.405
169.95
2.870
59.47
0.161
68.00
0.244
--54.75
1400
0.412
165.14
2.496
53.81
0.187
66.24
0.252
--60.09
1600
0.417
160.67
2.226
48.20
0.212
64.03
0.260
--65.80
1800
0.422
155.72
2.010
42.96
0.237
62.33
0.267
--70.89
2000
0.428
150.84
1.841
37.78
0.263
60.20
0.275
--76.12
2200
0.434
145.91
1.692
32.98
0.291
58.16
0.282
--81.97
2400
0.433
140.96
1.574
28.60
0.314
55.69
0.286
--86.52
2600
0.438
136.73
1.469
24.51
0.339
53.89
0.291
--91.68
2800
0.447
132.49
1.384
21.02
0.367
52.12
0.298
--97.10
3000
0.459
128.65
1.319
17.72
0.395
49.72
0.298
--103.63
No. A1114-5/6
55GN01MA
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of October, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1114-6/6