2SC5415A Ordering number : ENA1080 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5415A High-Frequency Low-Noise Amplifier Applications Features • • High gain : ⏐S21e⏐2=9dB typ (f=1GHz). High cut-off frequency : fT=6.7GHz typ. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Symbol Conditions Ratings Unit VCBO VCEO 20 V 12 V VEBO IC 2 Junction Temperature PC Tj Storage Temperature Tstg When mounted on ceramic substrate (250mm2✕0.8mm) V 100 mA 800 mW 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol Conditions Ratings min typ max Unit ICBO IEBO VCB=10V, IE=0A 1.0 μA VEB=1V, IC=0A 10 μA hFE1 VCE=5V, IC=30mA 90* hFE2 VCE=5V, IC=70mA 70 270* Continued on next page. * : The 2SC5415A is classified by 30mA hFE as follows : Marking EA E EA F Rank E F hFE 90 to 180 135 to 270 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 93009AB TK IM TC-00002100 No. A1080-1/6 2SC5415A Continued from preceding page. Parameter Symbol Gain-Bandwidth Product fT Output Capacitance Cob Reverse Transfer Capacitance Cre Forward Transfer Gain 2 ⏐S21e⏐ NF Noise Figure Ratings Conditions min VCE=5V, IC=30mA VCB=5V, f=1MHz typ 5 6.7 GHz 1.2 VCB=5V, f=1MHz VCE=5V, IC=30mA, f=1GHz Unit max 7.5 VCE=5V, IC=7mA, f=1GHz 1.8 pF 0.65 pF 9 dB 1.1 2.0 dB Package Dimensions unit : mm (typ) 7007B-004 IC -- VCE 0.30mA 40 Collector Current, IC -- mA Collector Current, IC -- mA 0.35mA 0.25mA 0.20mA 30 0.15mA 20 0.10mA 10 0.05mA IB=0mA 0 0 2 IC -- VBE 100 4 6 8 Collector-to-Emitter Voltage, VCE -- V 10 IT13392 80 60 40 20 V CE = 5V 2V 50 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 IT13393 No. A1080-2/6 2SC5415A hFE -- IC 7 fT -- IC 10 Gain-Bandwidth Product, fT -- GHz 5 DC Current Gain, hFE 3 2 VCE=5V 2V 100 7 5 3 2 10 =5V VCE 5 2V 3 2 1.0 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 2 1.0 3 Reverse Transfer Capacitance, Cre -- pF 5 3 2 1.0 7 5 3 2 7 2 10 3 5 0.1 f=1MHz 7 5 3 2 1.0 7 5 3 2 0.1 2 7 0.1 3 5 7 1.0 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V 3 7 0.1 2 3 5 7 1.0 2 3 5 7 10 4 2V V CE= 2 f=1GHz Forward Transfer Gain,⏐S21e⏐2 -- dB 6 5V 3 IT13397 C 12 f=1GHz 8 2 Collector-to-Base Voltage, VCB -- V ⏐S21e⏐2 -- I IT13396 NF -- IC 10 Noise Figure, NF -- dB 7 100 IT13395 Cre -- VCB 10 f=1MHz 7 5 Collector Current, IC -- mA IT13394 Cob -- VCB 10 Output Capacitance, Cob -- pF 7 V V CE=5 10 2V 8 6 4 2 0 0 7 2 1.0 3 5 7 2 10 3 Collector Current, IC -- mA 5 7 100 IT13399 PC -- Ta 1000 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- mA 5 7 100 IT13398 Collector Dissipation, PC -- mW When mounted on ceramic substrate (250mm2✕0.8mm) 800 600 400 200 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13400 No. A1080-3/6 2SC5415A S Parameters (Common emitter) VCE=2V, IC=5mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.737 --51.3 11.929 142.2 0.046 65.0 0.836 --27.1 200 0.564 --86.8 8.854 118.5 0.070 54.3 0.649 --39.5 400 0.408 --129.5 5.231 95.2 0.097 51.5 0.454 --48.4 600 0.366 --155.0 3.667 82.0 0.121 53.7 0.394 --52.3 800 0.348 --175.8 2.811 70.0 0.147 55.3 0.370 --56.6 1000 0.338 169.4 2.332 62.6 0.175 56.2 0.368 --60.5 1200 0.346 156.6 2.000 54.2 0.205 55.7 0.361 --66.7 1400 0.350 145.7 1.739 47.3 0.235 54.9 0.363 --72.2 1600 0.360 136.1 1.557 40.6 0.267 53.7 0.371 --77.7 1800 0.365 126.2 1.428 34.4 0.300 51.7 0.383 --83.4 2000 0.369 116.9 1.306 29.3 0.334 49.2 0.385 --89.5 VCE=2V, IC=10mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.580 --67.4 17.590 130.8 0.040 62.8 0.715 --36.9 200 0.414 --104.9 11.116 109.3 0.059 58.5 0.490 --48.3 400 0.311 --145.7 6.099 90.2 0.091 60.9 0.338 --53.5 600 0.291 --168.2 4.213 79.2 0.125 62.4 0.294 --56.9 800 0.286 172.9 3.212 69.7 0.159 61.8 0.279 --61.6 1000 0.281 159.6 2.634 62.4 0.194 60.3 0.277 --65.9 1200 0.292 148.3 2.248 54.9 0.228 57.7 0.281 --71.7 1400 0.297 138.5 1.973 48.5 0.261 55.2 0.284 --77.2 1600 0.305 129.7 1.767 42.4 0.295 52.6 0.290 --82.7 1800 0.311 120.5 1.605 36.4 0.328 49.6 0.297 --88.5 2000 0.313 111.7 1.473 31.2 0.362 46.3 0.303 --93.9 VCE=2V, IC=20mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.432 --85.5 21.435 121.4 0.034 63.6 0.585 --45.4 200 0.313 --123.5 12.390 102.7 0.052 64.6 0.375 --54.0 400 0.263 --160.5 6.547 87.0 0.090 67.4 0.260 --57.1 600 0.257 --179.7 4.481 77.4 0.129 67.0 0.231 --60.9 800 0.260 163.3 3.408 68.8 0.168 64.8 0.224 --66.3 1000 0.258 151.6 2.792 62.1 0.206 62.3 0.224 --70.9 1200 0.271 141.6 2.378 55.1 0.243 58.7 0.231 --77.2 1400 0.270 133.1 2.085 49.1 0.278 55.4 0.236 --82.9 1600 0.282 124.5 1.867 43.2 0.313 52.2 0.242 --88.4 1800 0.288 115.4 1.697 37.5 0.346 48.7 0.249 --94.2 2000 0.290 107.0 1.558 32.3 0.380 45.0 0.256 --99.4 ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 VCE=2V, IC=30mA, ZO=50Ω Freq(MHz) ⏐S11⏐ 100 0.370 --97.4 22.555 117.0 0.031 65.1 0.518 --49.0 200 0.288 --135.1 12.614 99.9 0.051 67.4 0.326 --55.8 400 0.260 --168.5 6.590 85.5 0.090 69.9 0.229 --58.1 600 0.259 174.8 4.499 76.4 0.131 68.6 0.207 --62.3 800 0.263 159.3 3.419 68.1 0.172 66.0 0.204 --68.3 1000 0.262 148.2 2.796 61.7 0.211 62.8 0.206 --73.2 1200 0.275 138.9 2.382 54.7 0.248 59.1 0.215 --79.6 1400 0.279 130.4 2.089 48.8 0.284 55.6 0.220 --85.4 1600 0.286 122.5 1.869 43.0 0.320 52.1 0.227 --91.1 1800 0.291 113.8 1.700 37.3 0.353 48.4 0.235 --97.0 2000 0.293 105.4 1.562 32.2 0.387 44.7 0.242 --102.2 No. A1080-4/6 2SC5415A S Parameters (Common emitter) VCE=5V, IC=5mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.752 --45.7 12.674 144.1 0.037 67.6 0.871 --21.6 200 0.575 --78.6 9.416 121.5 0.058 57.3 0.697 --32.2 400 0.391 --119.9 5.688 97.7 0.082 54.4 0.532 --38.3 600 0.334 --146.4 4.015 84.3 0.103 56.8 0.472 --41.5 800 0.307 --169.1 3.085 73.2 0.126 58.9 0.450 --45.4 1000 0.292 174.7 2.534 65.1 0.151 60.2 0.444 --49.5 1200 0.303 160.6 2.164 56.8 0.177 60.0 0.449 --54.6 1400 0.305 148.6 1.896 499.9 0.204 59.7 0.453 --59.6 1600 0.314 137.9 1.693 43.2 0.235 58.9 0.454 --65.0 1800 0.321 127.3 1.530 36.9 0.267 57.1 0.460 --70.0 2000 0.328 117.7 1.394 31.5 0.299 55.1 0.470 --76.4 VCE=5V, IC=10mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.601 --58.4 18.468 133.9 0.033 65.7 0.765 --25.1 200 0.413 --92.4 12.043 112.1 0.049 61.0 0.603 --30.7 400 0.275 --132.7 6.703 92.4 0.078 63.3 0.509 --36.8 600 0.240 --157.9 4.641 81.3 0.107 64.8 0.470 --45.9 800 0.228 --179.9 3.536 71.9 0.137 64.6 0.438 --56.8 1000 0.221 164.7 2.889 64.8 0.168 63.6 0.408 --69.3 1200 0.232 151.6 2.462 57.2 0.199 61.5 0.371 --83.9 1400 0.238 140.6 2.154 51.0 0.229 59.5 0.334 --100.6 1600 0.249 131.1 1.924 44.8 0.259 57.3 0.298 --120.1 1800 0.257 120.9 1.740 38.8 0.290 54.6 0.265 --143.5 2000 0.262 111.5 1.589 33.6 0.322 51.6 0.246 --170.6 VCE=5V, IC=30mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 100 0.373 --79.4 24.799 120.4 0.026 67.6 0.598 --36.8 200 0.245 --114.8 14.190 102.5 0.043 69.5 0.418 --39.2 400 0.183 --154.3 7.472 87.6 0.077 71.8 0.331 --38.5 600 0.174 --175.8 5.102 78.5 0.112 70.9 0.310 --41.3 800 0.177 163.8 3.872 70.4 0.147 68.7 0.305 --46.3 1000 0.177 150.2 3.158 64.1 0.181 66.1 0.308 --51.0 1200 0.190 139.3 2.681 57.4 0.215 62.8 0.313 --57.0 1400 0.197 129.5 2.343 51.6 0.247 59.6 0.317 --62.4 1600 0.209 121.2 2.090 45.9 0.279 56.7 0.321 --67.8 1800 0.217 111.6 1.892 40.3 0.309 53.3 0.327 --73.6 2000 0.222 102.6 1.727 35.2 0.340 49.9 0.333 --78.9 ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 VCE=5V, IC=50mA, ZO=50Ω Freq(MHz) ⏐S11⏐ 100 0.308 --92.8 25.470 116.0 0.024 69.2 0.543 --36.8 200 0.221 --129.7 14.126 99.7 0.041 72.1 0.389 --36.4 400 0.190 --165.7 7.357 85.9 0.076 73.8 0.324 --35.3 600 0.189 176.0 5.012 77.4 0.111 72.5 0.309 --38.8 800 0.195 158.6 3.800 69.4 0.146 69.9 0.307 --44.2 1000 0.195 146.5 3.097 63.2 0.180 67.2 0.311 --49.3 1200 0.209 136.8 2.630 56.5 0.214 63.7 0.317 --55.6 1400 0.216 127.8 2.300 50.8 0.246 60.5 0.321 --61.3 1600 0.227 119.9 2.050 45.1 0.279 57.5 0.325 --66.9 1800 0.237 111.0 1.857 39.4 0.310 54.1 0.331 --72.8 2000 0.241 102.2 1.695 34.5 0.341 50.5 0.337 --78.3 No. A1080-5/6 2SC5415A SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2009. Specifications and information herein are subject to change without notice. PS No. A1080-6/6