IRF IRF7306QPBF_10

PD - 96105A
IRF7306QPbF
HEXFET® Power MOSFET
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Advanced Process Technology
Ultra Low On-Resistance
Dual P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
VDSS = -30V
RDS(on) = 0.10Ω
Top View
Description
These HEXFET® Power MOSFET's in a Dual
SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance
per silicon area. Additional features of these
HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in a wide
variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also
available in Tape & Reel.
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Max.
10 Sec. Pulsed Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Units
-4.0
-3.6
-2.9
-14
2.0
0.016
±20
-5.0
-55 to + 150
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
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Maximum Junction-to-Ambient„
Typ.
Max.
Units
–––
62.5
°C/W
1
08/02/10
IRF7306QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min. Typ. Max. Units
Conditions
-30 ––– –––
V
VGS = 0V, ID = -250µA
––– -0.037 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.10
VGS = -10V, I D = -1.8A ƒ
Ω
––– ––– 0.16
VGS = -4.5V, ID = -1.5A ƒ
-1.0 ––– –––
V
VDS = VGS, I D = -250µA
2.5 ––– –––
S
VDS = -24V, ID = -1.8A
––– ––– -1.0
VDS = -24V, VGS = 0V
µA
––– ––– -25
VDS = -24V, VGS = 0V, TJ = 125°C
––– ––– -100
VGS = -20V
nA
––– ––– 100
VGS = 20V
––– ––– 25
ID = -1.8A
––– ––– 2.9
nC VDS = -24V
––– ––– 9.0
VGS = -10V, See Fig. 6 and 12 ƒ
––– 11 –––
VDD = -15V
––– 17 –––
ID = -1.8A
ns
––– 25 –––
RG = 6.0Ω
––– 18 –––
RD = 8.2Ω, See Fig. 10 ƒ
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
6.0
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
440
200
93
–––
–––
–––
V(BR)DSS
RDS(ON)
Static Drain-to-Source On-Resistance
V GS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
4.0
D
–––
nH
Between lead tip
and center of die contact
pF
VGS = 0V
VDS = -25V
ƒ = 1.0MHz, See Fig. 5
G
S
Source-Drain Ratings and Characteristics
IS
I SM
V SD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -2.5
showing the
A
G
integral reverse
––– ––– -14
p-n junction diode.
S
––– ––– -1.0
V
TJ = 25°C, IS = -1.8A, VGS = 0V ƒ
––– 53
80
ns
TJ = 25°C, IF = -1.8A
––– 66
99
nC di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
„ Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature. ( See fig. 11 )
TJ ≤150°C
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2
IRF7306QPbF
100
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
10
20µs PULSE WIDTH
TJ = 25°C
A
1
0.1
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
-I D , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
TOP
1
10
10
-4.5V
20µs PULSE WIDTH
TJ = 150°C
1
0.1
100
1
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
100
TJ = 25°C
TJ = 150°C
10
VDS = -15V
20µs PULSE WIDTH
4
5
6
7
8
9
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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A
100
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
10
10
A
2.0
I D = -3.0A
1.5
1.0
0.5
VGS = -10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7306QPbF
1000
600
-VGS , Gate-to-Source Voltage (V)
800
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
Coss
400
Crss
200
0
1
10
100
A
ID = -3.0A
VDS = -24V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 12
0
0
-VDS , Drain-to-Source Voltage (V)
10
15
20
25
A
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
5
10
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.3
0.6
0.9
1.2
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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A
1.5
100us
10
1ms
1
TC = 25 °C
TJ = 150 °C
Single Pulse
1
10ms
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
4
IRF7306QPbF
4.0
V DS
-ID , Drain Current (A)
V GS
3.0
RD
D.U.T.
RG
-
+
V DD
-10
PulseVWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7306QPbF
Current Regulator
Same Type as D.U.T.
50KΩ
QG
-10 V
QGS
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 12a. Basic Gate Charge Waveform
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.2µF
12V
IG
ID
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
6
IRF7306QPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+
**

RG
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS*
-
*
V DD
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
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7
IRF7306QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
6
7
6
5
H
1
2
3
0.25 [.010]
4
A
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X
e
e1
A1
8X b
0.25 [.010]
A
MILLIMETERS
MIN
A
E
INCHES
DIM
B
MAX
.025 BASIC
0.635 B ASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
8X L
8X c
7
C A B
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOSF ET )
INT ERNAT IONAL
RECT IF IER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DESIGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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8
IRF7306QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2010
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