IRF IRF7303PBF

PD - 95177
IRF7303PbF
Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
Description
HEXFET® Power MOSFET
l
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
VDSS = 30V
RDS(on) = 0.050Ω
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
V GS
dv/dt
TJ, TSTG
10 Sec. Pulsed Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
Units
5.3
4.9
3.9
20
2.0
0.016
± 20
5.0
-55 to + 150
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient„
Typ.
Max.
Units
–––
62.5
°C/W
10/6/04
IRF7303PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
Qg
Q gs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
30
–––
–––
–––
1.0
5.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.032
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.8
21
22
7.7
LD
Internal Drain Inductance
–––
4.0
–––
LS
Internal Source Inductance
–––
6.0
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
520
180
72
–––
–––
–––
V(BR)DSS
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
g fs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.050
VGS = 10V, ID = 2.4A ƒ
Ω
0.080
VGS = 4.5V, ID = 2.0A ƒ
–––
V
VDS = VGS, ID = 250µA
–––
S
VDS = 15V, ID = 2.4A
1.0
VDS = 24V, VGS = 0V
µA
25
VDS = 24V, V GS = 0V, TJ = 125 °C
100
VGS = 20V
nA
-100
VGS = - 20V
25
ID = 2.4A
2.9
nC VDS = 24V
7.9
VGS = 10V, See Fig. 6 and 12 ƒ
–––
VDD = 15V
–––
ID = 2.4A
ns
–––
RG = 6.0Ω
–––
RD = 6.2Ω, See Fig. 10 ƒ
D
nH
Between lead tip
and center of die contact
pF
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
G
S
Source-Drain Ratings and Characteristics
IS
I SM
V SD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 2.5
showing the
A
G
integral reverse
––– ––– 20
p-n junction diode.
S
––– ––– 1.0
V
TJ = 25°C, IS = 1.8A, V GS = 0V ƒ
––– 47
71
ns
TJ = 25°C, IF = 2.4A
––– 56
84
nC di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS,
„ Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature. ( See fig. 11 )
TJ ≤ 150°C
IRF7303PbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
20µs PULSE WIDTH
TJ = 25°C
1
0.1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
TOP
1
10
A
100
4.5V
10
20µs PULSE WIDTH
TJ = 150°C
1
0.1
100
1
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
TJ = 25°C
TJ = 150°C
V DS = 15V
20µs PULSE WIDTH
4
5
6
7
8
9
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
A
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
10
10
A
I D = 4.0A
1.5
1.0
0.5
VGS = 10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF7303PbF
1000
V GS , Gate-to-Source Voltage (V)
800
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
I D = 2.4A
VDS = 24V
16
Ciss
600
12
Coss
400
Crss
200
0
1
10
100
A
8
4
FOR TEST CIRCUIT
SEE FIGURE 12
0
0
5
VDS , Drain-to-Source Voltage (V)
15
20
25
A
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
10
10
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.5
100us
10
1ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
10ms
1
10
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRF7303PbF
5.0
V DS
VGS
ID , Drain Current (A)
4.0
D.U.T.
RG
3.0
RD
+
- VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7303PbF
Current Regulator
Same Type as D.U.T.
QG
10V
QGS
50KΩ
.2µF
12V
.3µF
QGD
VG
D.U.T.
+
V
- DS
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 12a. Basic Gate Charge Waveform
Fig 12b. Gate Charge Test Circuit
IRF7303PbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by R G
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
ISD
*
IRF7303PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
6
7
6
H
E
1
6X
2
3
0.25 [.010]
4
A
e
e1
8X b
0.25 [.010]
A
MILLIMET ERS
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
.025 BASIC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
A
5
INCHES
MIN
MAX
K x 45°
C
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMETER
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INTERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DESIGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = ASS EMBLY SIT E CODE
LOT CODE
PART NUMBER
IRF7303PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04