PD - 95165
IRF7204PbF
Adavanced Process Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
Description
HEXFET® Power MOSFET
l
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
VDSS = -20V
RDS(on) = 0.060Ω
ID = -5.3A
Top View
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Units
-5.3
-4.2
-21
2.5
0.020
± 12
-1.7
-55 to + 150
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient
Min.
Typ.
Max.
50
Units
°C/W
10/6/04
IRF7204PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Qg
Q gs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
-20
-1.0
RDS(ON)
Static Drain-to-Source On-Resistance
V GS(th)
g fs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
LS
Internal Source Inductance
4.0
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
860
750
230
V(BR)DSS
IGSS
Typ. Max. Units
Conditions
V
VGS = 0V, ID = -250µA
-0.022 V/°C Reference to 25°C, ID = -1mA
0.060
VGS = -10V, I D = -5.3A
Ω
0.10
VGS = -4.5V, ID = -2.0A
-2.5
V
VDS = VGS, ID = -250µA
7.9
S
VDS = -15V, ID = -5.3A
-25
VDS = -16V, VGS = 0V
µA
-250
VDS = -16V, VGS = 0V, TJ = 125 °C
-100
VGS = -12V
nA
100
VGS = 12V
25
ID = -5.3A
5.0
nC VDS = -10V
8.0
VGS = -10V
14
30
VDD = -10V
26
60
ID = -1.0A
ns
100 150
RG = 6.0Ω
68 100
RD = 10Ω
2.5
D
nH
pF
Between lead,6mm(0.25in.)
from package and center
of die contact
VGS = 0V
VDS = -10V
= 1.0MHz
G
Source-Drain Ratings and Characteristics
IS
I SM
V SD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
-2.5
showing the
A
G
integral reverse
-15
p-n junction diode.
S
-1.2
V
TJ = 25°C, IS = -1.25A, VGS = 0V
85 100
ns
TJ = 25°C, IF = -2.4A
77 120
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ISD ≤ -5.3A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature.
TJ ≤ 150°C
S
-ID , Drain-to-Source Current ( A )
-ID , Drain-to-Source Current ( A )
IRF7204PbF
-VDS , Drain-to-Source Voltage ( V )
-VDS , Drain-to-Source Voltage ( V )
Fig 2. Typical Output Characteristics
-ID , Drain-to-Source Current ( A )
RDS (on) , Drain-to-Source On Resistance
( Normalized)
Fig 1. Typical Output Characteristics
-VGS , Gate-to-Source Voltage ( V )
TJ , Junction Temperature ( °C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
C , Capacitance ( pF )
-VGS , Gate-to-Source Voltage ( V )
IRF7204PbF
12
-VDS , Drain-to-Source Voltage ( V )
QG , Total Gate Charge ( nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
-IID , Drain Current (A)
-ISD , Reverse Drain Current ( A )
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1ms
10
10ms
TA = 25 ° C
TJ = 150° C
Single Pulse
1
0.1
-VSD , Source-to-Drain Voltage ( V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRF7204PbF
V DS
6.0
VGS
-ID , Drain Current (A)
5.0
RD
D.U.T.
RG
-
+
V DD
4.0
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
3.0
Fig 10a. Switching Time Test Circuit
2.0
td(on)
1.0
tr
t d(off)
tf
VGS
10%
0.0
25
50
75
100
125
TC , Case Temperature ( ° C)
150
90%
VDS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
PDM
0.02
1
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7204PbF
Current Regulator
Same Type as D.U.T.
QG
50KΩ
12V
-10V
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 12a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
IRF7204PbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
V GS
*
+
-
V DD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
[ ISD ]
IRF7204PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X
e
e1
8X b
0.25 [.010]
A
MILLIMET ERS
MAX
A
5
INCHES
MIN
MAX
.025 BASIC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMETER
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER
IRF7204PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04