FAIRCHILD H11AG1M

H11AG1M
Phototransistor Optocoupler
tm
Features
Description
■ High efficiency low degradation liquid epitaxial IRED
The H11AG1M device consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon
phototransistor in a dual in-line package. This device
provides the unique feature of the high current transfer
ratio at both low output voltage and low input current.
This makes it ideal for use in low power logic circuits,
telecommunications equipment and portable electronics
isolation applications.
■ Logic level compatible, input and output currents,
with CMOS and LS/TTL
■ High DC current transfer ratio at low input currents
(as low as 200µA)
■ Underwriters Laboratory (UL) recognized File
#E90700, Volume 2
■ IEC 60747-5-2 approved (ordering option V)
Applications
■ CMOS driven solid state reliability
■ Telephone ring detector
■ Digital logic isolation
Schematic
ANODE 1
6 BASE
6
CATHODE 2
1
5 COL
6
1
6
N/C 3
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.0.1
4 EMITTER
1
www.fairchildsemi.com
H11AG1M Phototransistor Optocoupler
October 2007
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameters
Value
Units
TOTAL DEVICE
TSTG
Storage Temperature
-55 to +150
°C
TOPR
Operating Temperature
-40 to +100
°C
TSOL
260 for 10 sec
°C
260
mW
Derate Linearly From 25°C
3.5
mW/°C
IF
Continuous Forward Current
50
mA
VR
Reverse Voltage
6
V
Forward Current – Peak (1µs pulse, 300pps)
3.0
A
LED Power Dissipation 25°C Ambient
75
mW
1.0
mW/°C
150
mW
Derate Linearly from 25°C
2.0
mW/°C
Continuous Collector Current
50
mA
PD
Lead Solder Temperature (Wave Solder)
Total Device Power Dissipation @ 25°C (LED plus detector)
EMITTER
IF(pk)
PD
Derate Linearly From 25°C
DETECTOR
PD
IC
Detector Power Dissipation @ 25°C
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.0.1
www.fairchildsemi.com
2
H11AG1M Phototransistor Optocoupler
Absolute Maximum Ratings
Individual Component Characteristics
Symbol
Parameters
Test Conditions
Min.
Typ.*
Max.
Units
1.25
1.5
V
EMITTER
VF
Input Forward Voltage
IF = 1mA
IR
Reverse Leakage Current
VR = 5V, TA = 25°C
10
µA
CJ
Capacitance
V = 0, f = 1.0MHz
100
pF
BVCEO
Breakdown Voltage, Collector to Emitter
IC = 1.0mA, IF = 0
30
V
BVCBO
Collector to Base
IC = 100µA, IF = 0
70
V
BVECO
Emitter to Collector
IC = 100µA, IF = 0
7
V
ICEO
Leakage Current, Collector to Emitter
VCE = 10V, IF = 0
5
CCE
Capacitance
VCE = 10V, f = 1MHz
10
DETECTOR
10
µA
pF
*Typical values at TA = 25°C.
Isolation Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.*
Max.
Units
VISO
Input-Output Isolation Voltage
f = 60Hz, t = 1 sec.
7500
VACPEAK
RISO
Isolation Resistance
VI-O = 500VDC, TA = 25°C
1011
Ω
Transfer Characteristics (TA = 25°C Unless otherwise specified.)
Symbol
Characteristics
Test Conditions
Min.
Typ.*
Max.
Units
DC CHARACTERISTICS
CTR
VCE(SAT)
Current Transfer Ratio
Saturation Voltage
IF = 1mA, VCE = 5V
300
IF = 1mA, VCE = 0.6V
100
IF = 0.2mA, VCE = 1.5V
100
%
IF = 2.0mA, IC = 0.5mA
.40
V
AC CHARACTERISTICS
Non-Saturated Switching Times
ton
Turn-On Time
RL = 100Ω, IF = 1mA, VCC = 5V
5
µs
toff
Turn-Off Time
RL = 100Ω, IF = 1mA, VCC = 5V
5
µs
*Typical values at TA = 25°C
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.0.1
www.fairchildsemi.com
3
H11AG1M Phototransistor Optocoupler
Electrical Characteristics (TA = 25°C unless otherwise specified.)
Figure 2. Normalized Current Transfer Ratio vs. Forward Current
1.2
1.8
1.0
NORMALIZED CTRCE
VF - FORWARD VOLTAGE (V)
Figure 1. LED Forward Voltage vs. Forward Current
2.0
1.6
1.4
o
TA = -55 C
TA = 25 oC
1.2
0.8
0.6
0.4
T A = 100 oC
1.0
NORMALIZED TO:
I F = 5mA
VCE = 5V
o
TA = 25 C
0.2
0.8
0.1
1
10
100
0.1
1
Figure 4. Normalized Collector vs. Collector - Emitter Voltage
Figure 3. Normalized CTR vs. Temperature
CE
NORMALIZED CTR CE
1.2
I F = 10mA
I F = 2mA
I F = 5mA
TA = 25 C
o
1.0
0.8
I F = 1mA
0.6
I F = 0.5mA
0.4
I F = 0.2mA
0.2
0.0
-60
-40
-20
0
20
40
60
80
100
NORMALIZED ICE - COLLECTOR - EMITTER CURRENT
1.6
NORMALIZED TO:
I F = 5mA
V = 5V
10
I F = 10mA
1
I F = 5mA
I F = 2mA
I F = 1mA
0.1
I F = 0.5mA
I F = 0.2mA
0.01
NORMALIZED TO:
I F = 5mA
VCE = 5V
TA = 25 o C
0.001
0.0001
0.1
o
1
TA - AMBIENT TEMPERATURE - C
10
VCE - COLLECTOR - EMITTER VOLTAGE - V
Figure 5. Normalized Collector Base
Photocurrent Ratio vs. Forward Current
Figure 6. Normalized Collector - Base Current vs. Temperature
30
10
NORMALIZED COLLECTOR - BASE CURRENT
NORMALIZED ICB - COLLECTOR BASE PHOTOCURRENT
100
IF - FORWARD CURRENT - mA
I F - LED FORWARD CURRENT (mA)
1.4
10
25
20
15
10
NORMALIZED TO:
I F = 5mA
VCB = 5V
TA = 25 o C
5
0
0
10
20
30
40
50
60
70
80
90
I F = 5mA
1
I F = 2mA
I F = 1mA
0.1
I F = 0.5mA
I F = 0.2mA
0.01
0.001
-60
100
NORMALIZED TO:
IF = 5mA
VCB = 5V
o
TA = 25 C
-40
-20
0
20
40
60
80
100
o
IF - FORWARD CURRENT - mA
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.0.1
I F = 10mA
TA - AMBIENT TEMPERATURE - C
www.fairchildsemi.com
4
H11AG1M Phototransistor Optocoupler
Typical Performance Curves
H11AG1M Phototransistor Optocoupler
Typical Performance Curves (Continued)
Figure 7. Collector-Emitter Dark Current vs. Ambient Temperature
10000
I F = 0mA
VCE = 10V
ICEO - DARK CURRENT (nA)
1000
100
10
1
0.1
0
10
20
30
40
50
60
70
80
90
100
TA - AMBIENT TEMPERATURE ( oC)
3V ≤ VCC ≤ 10V
47KΩ
4093 or
74HC14
R1
H11AG1M
AC
INPUT
VOLTAGE
1N4148
C1
4.7MΩ
C2
0.1
4.7KΩ
Input
R1
C1
Z
40-90 VRMS
20Hz
75K
1/10W
0.1µF
100V
109K
95-135 VRMS
60Hz
180K
1/10W
12 ηF
200 V
285K
200-280 VRMS
50/60Hz
390K
1/4W
6.80 ηF
400 V
550K
DC component of input voltage is ignored due to C1
Figure 8. Telephone Ring Detector/A.C. Line CMOS Input Isolator
The H11AG1M uses less input power than the neon bulb traditionally used to monitor telephone and line voltages.
Additionally. response time can be tailored to ignore telephone dial tap, switching transients and other undesired
signals by modifying the value of C2. The high impedance to line voltage also can simply board layout spacing
requirements.
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.0.1
www.fairchildsemi.com
5
Through Hole
Surface Mount
0.350 (8.89)
0.320 (8.13)
0.350 (8.89)
0.320 (8.13)
PIN 1 ID
Pin 1 ID
0.260 (6.60)
0.240 (6.10)
0.070 (1.77)
0.040 (1.02)
0.390 (9.90)
0.332 (8.43)
0.070 (1.77)
0.040 (1.02)
SEATING PLANE
SEATING PLANE
0.260 (6.60)
0.240 (6.10)
0.320 (8.13)
0.014 (0.36)
0.010 (0.25)
0.200 (5.08)
0.115 (2.93)
0.320 (8.13)
0.014 (0.36)
0.010 (0.25)
0.200 (5.08)
0.115 (2.93)
0.012 (0.30)
0.008 (0.20)
0.025 (0.63)
0.020 (0.51)
0.100 (2.54)
0.015 (0.38)
0.020 (0.50)
0.016 (0.41)
0.100 (2.54)
0.100 [2.54]
0.035 (0.88)
0.006 (0.16)
0.020 (0.50)
0.016 (0.41)
15°
0.012 (0.30)
0.4" Lead Spacing
Recommended Pay Layout for
Surface Mount Leadform
0.350 (8.89)
0.320 (8.13)
PIN 1 ID
0.070 (1.78)
0.260 (6.60)
0.240 (6.10)
0.060 (1.52)
SEATING PLANE
0.070 (1.77)
0.040 (1.02)
0.415 (10.54)
0.014 (0.36)
0.010 (0.25)
0.100 (2.54)
0.295 (7.49)
0.030 (0.76)
0.200 (5.08)
0.115 (2.93)
0.100 (2.54)
0.015 (0.38)
0.020 (0.50)
0.016 (0.41)
0.100 [2.54]
0.012 (0.30)
0.008 (0.21)
0.425 (10.80)
0.400 (10.16)
Note:
All dimensions are in inches (millimeters)
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.0.1
www.fairchildsemi.com
6
H11AG1M Phototransistor Optocoupler
Package Dimensions
Suffix
Example
Option
No Suffix
H11AG1M
S
H11AG1SM
SR2
H11AG1SR2M
T
H11AG1TM
0.4" Lead Spacing
V
H11AG1VM
VDE 0884
TV
H11AG1TVM
VDE 0884, 0.4" Lead Spacing
SV
H11AG1SVM
VDE 0884, Surface Mount
SR2V
H11AG1SR2VM
Standard Through Hole Device (50 units per tube)
Surface Mount Lead Bend
Surface Mount; Tape and Reel (1,000 units per reel)
VDE 0884, Surface Mount, Tape & Reel (1,000 units per reel)
Marking Information
1
V
3
H11AG1
2
X YY Q
6
5
4
Definitions
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
One digit year code, e.g., ‘7’
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.0.1
www.fairchildsemi.com
7
H11AG1M Phototransistor Optocoupler
Ordering Information
12.0 ± 0.1
4.5 ± 0.20
2.0 ± 0.05
Ø1.5 MIN
4.0 ± 0.1
0.30 ± 0.05
1.75 ± 0.10
11.5 ± 1.0
21.0 ± 0.1
9.1 ± 0.20
Ø1.5 ± 0.1/-0
10.1 ± 0.20
0.1 MAX
24.0 ± 0.3
User Direction of Feed
Note:
All dimensions are in inches (millimeters)
Reflow Soldering Profile
300
280
260
240
220
200
180
160
°C 140
120
100
80
60
40
20
0
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
1.822°C/Sec Ramp up rate
33 Sec
0
60
120
180
270
360
Time (s)
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.0.1
www.fairchildsemi.com
8
H11AG1M Phototransistor Optocoupler
Tape Dimensions
ACEx®
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
Power247®
POWEREDGE®
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FPS™
FRFET®
Global Power ResourceSM
®
PDP-SPM™
Power220®
SuperSOT™-8
SyncFET™
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
UniFET™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Definition
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I31
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.0.1
www.fairchildsemi.com
9
H11AG1M Phototransistor Optocoupler
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