4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler Features Description ■ High sensitivity to low input drive current The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. ■ Meets or exceeds all JEDEC Registered Specifications tm ■ UL, C-UL approved ■ VDE 0884 approval available as a test option – add option V (e.g., 4N29VM) Applications ■ Low power logic circuits ■ Telecommunications equipment ■ Portable electronics ■ Solid state relays ■ Interfacing coupling systems of different potentials and impedances Packages Schematic 6 1 6 ANODE 1 6 BASE 1 CATHODE 2 5 COLLECTOR 6 1 N/C 3 ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.0 4 EMITTER www.fairchildsemi.com 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler May 2007 Symbol Parameter Value Units -40 to +150 °C TOTAL DEVICE TSTG Storage Temperature TOPR Operating Temperature TSOL Lead Solder Temperature (Wave) PD Total Device Power Dissipation @ TA = 25°C Derate above 25°C -40 to +100 °C 260 for 10 sec °C 250 mW 3.3 mW/°C EMITTER IF Continuous Forward Current 80 mA VR Reverse Voltage 3 V IF(pk) Forward Current – Peak (300µs, 2% Duty Cycle) 3.0 A LED Power Dissipation @ TA = 25°C 150 mW 2.0 mW/°C Collector-Emitter Breakdown Voltage 30 V BVCBO Collector-Base Breakdown Voltage 30 V BVECO Emitter-Collector Breakdown Voltage 5 V 150 mW 2.0 mW/°C 150 mA PD Derate above 25°C DETECTOR BVCEO PD Detector Power Dissipation @ TA = 25°C Derate above 25°C IC Continuous Collector Current ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.0 www.fairchildsemi.com 2 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler Absolute Maximum Ratings (TA = 25°C Unless otherwise specified.) Individual Component Characteristics Symbol Parameter Test Conditions Device Min. Typ. Max. Unit 1.2 1.5 V 1.2 1.5 EMITTER VF Input Forward Voltage* IF = 10mA 4NXXM H11B1M, TIL113M IR C Reverse Leakage Current* Capacitance* 0.8 VR = 3.0V 4NXXM 0.001 100 VR = 6.0V H11B1M, TIL113M 0.001 10 All 150 pF V VF = 0V, f = 1.0MHz µA DETECTOR BVCEO Collector-Emitter Breakdown Voltage* IC = 1.0mA, IB = 0 BVCBO Collector-Base Breakdown Voltage* BVECO Emitter-Collector Breakdown Voltage* IE = 100µA, IB = 0 ICEO Collector-Emitter Dark Current* IC = 100µA, IE = 0 VCE = 10V, Base Open 4NXXM, TIL113M 30 60 H11B1M 25 60 All 30 100 V 4NXXM 5.0 10 V H11B1M, TIL113M 7 10 All 1 100 nA Max. Unit Transfer Characteristics Symbol Parameter Test Conditions Device Min. 4N32M, 4N33M 50 (500) 4N29M, 4N30M 10 (100) Typ. DC CHARACTERISTICS IC(CTR) VCE(SAT) Collector Output Current*(1, 2) Saturation Voltage*(2) IF = 10mA, VCE = 10V, IB = 0 IF = 1mA, VCE = 5V H11B1M 5 (500) IF = 10mA, VCE = 1V TIL113M 30 (300) IF = 8mA, IC = 2.0mA mA (%) 4NXXM 1.0 TIL113M 1.25 V IF = 1mA, IC = 1mA H11B1M 1.0 IF = 200mA, IC = 50mA, VCC = 10V, RL = 100Ω 4NXXM, TIL113M 5.0 µS IF = 10mA, VCE = 10V, RL = 100Ω H11B1M IF = 200mA, IC = 50mA, VCC = 10V, RL = 100Ω 4N32M, 4N33M, TIL113M 100 µS 4N29M, 4N30M 40 AC CHARACTERISTICS ton toff Turn-on Time Turn-off Time IF = 10mA, VCE = 10V, RL = 100Ω BW 18 30 Bandwidth(3, 4) ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.0 H11B1M 25 kHz www.fairchildsemi.com 3 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler Electrical Characteristics (TA = 25°C Unless otherwise specified.) Symbol VISO Characteristic Test Conditions Input-Output Isolation Voltage(5) II-O ≤ 1µA, Vrms, t = 1sec. VDC VDC RISO CISO Isolation Resistance(5) Isolation Capacitance (5) Device Min. All 7500 Vac(peak) 4N32M* 2500 V 4N33M* 1500 VI-O = 500VDC All 1011 VI-O = Ø, f = 1MHz All Typ. Max. Units Ω 0.8 pF Notes: * Indicates JEDEC registered data. 1. The current transfer ratio(IC/IF) is the ratio of the detector collector current to the LED input current. 2. Pulse test: pulse width = 300µs, duty cycle ≤ 2.0% . 3. IF adjusted to IC = 2.0mA and IC = 0.7mA rms. 4. The frequency at which IC is 3dB down from the 1kHz value. 5. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common. ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.0 www.fairchildsemi.com 4 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler Electrical Characteristics (TA = 25°C Unless otherwise specified.) (Continued) Isolation Characteristics Fig. 2 Normalized CTR vs. Forward Current 1.6 1.7 1.4 1.6 1.2 NORMALIZED CTR VF - FORWARD VOLTAGE (V) Fig. 1 LED Forward Voltage vs. Forward Current 1.8 1.5 1.4 TA = -55°C 1.3 TA = 25°C VCE = 5.0V TA = 25°C Normalized to IF = 10 mA 1.0 0.8 0.6 1.2 0.4 TA = 100°C 1.1 0.2 1.0 0.0 1 10 0 100 2 4 6 IF - LED FORWARD CURRENT (mA) Fig. 3 Normalized CTR vs. Ambient Temperature 10 12 14 16 18 20 Fig. 4 CTR vs. RBE (Unsaturated) 1.4 NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 1.0 1.2 IF = 5 mA NORMALIZED CTR 8 IF - FORWARD CURRENT (mA) 1.0 IF = 10 mA 0.8 IF = 20 mA 0.6 Normalized to IF = 10 mA TA = 25°C 0.4 0.9 IF = 20 mA 0.8 IF = 10 mA 0.7 IF = 5 mA 0.6 0.5 0.4 0.3 0.2 VCE= 5.0 V 0.1 0.0 0.2 -60 -40 -20 0 20 40 60 80 100 10 100 TA - AMBIENT TEMPERATURE (°C) Fig. 6 Collector-Emitter Saturation Voltage vs. Collector Current Fig. 5 CTR vs. RBE (Saturated) 100 1.0 0.9 VCE= 0.3 V VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 1000 RBE- BASE RESISTANCE (kΩ) 0.8 IF = 20 mA 0.7 0.6 IF = 10 mA 0.5 0.4 0.3 IF = 5 mA 0.2 TA = 25˚C 10 1 IF = 2.5 mA 0.1 IF = 20 mA 0.01 IF = 5 mA 0.1 0.001 0.01 0.0 10 100 1000 RBE- BASE RESISTANCE (k Ω) ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.0 IF = 10 mA 0.1 1 10 IC - COLLECTOR CURRENT (mA) www.fairchildsemi.com 5 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler Typical Performance Curves Fig. 7 Switching Speed vs. Load Resistor Fig. 8 Normalized ton vs. RBE 1000 5.0 NORMALIZED ton - (ton(RBE) / ton(open)) SWITCHING SPEED - (µs) IF = 10 mA VCC = 10 V TA = 25°C 100 Toff 10 Tf Ton 1 Tr 0.1 0.1 4.5 VCC = 10 V IC = 2 mA RL = 100 Ω 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 1 10 100 10 100 10000 100000 Fig. 10 Dark Current vs. Ambient Temperature Fig. 9 Normalized toff vs. RBE ICEO - COLLECTOR -EMITTER DARK CURRENT (nA) 1.4 1.3 NORMALIZED toff - (toff(RBE) / toff(open)) 1000 RBE- BASE RESISTANCE (k Ω) R-LOAD RESISTOR (kΩ) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 VCC = 10 V IC = 2 mA RL = 100 Ω 0.5 0.4 0.3 0.2 10000 VCE = 10 V TA = 25°C 1000 100 10 1 0.1 0.01 0.001 0.1 10 100 1000 10000 0 100000 20 RBE- BASE RESISTANCE (k Ω) 40 60 80 100 TA - AMBIENT TEMPERATURE (°C) TEST CIRCUIT WAVE FORMS VCC = 10V INPUT PULSE IC IF INPUT RL 10% OUTPUT OUTPUT PULSE 90% RBE tr ton tf toff Adjust IF to produce IC = 2 mA Figure 11. Switching Time Test Circuit and Waveforms ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.0 www.fairchildsemi.com 6 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler Typical Performance Curves (Continued) Through Hole Surface Mount 0.350 (8.89) 0.320 (8.13) 0.350 (8.89) 0.320 (8.13) PIN 1 ID Pin 1 ID 0.260 (6.60) 0.240 (6.10) 0.070 (1.77) 0.040 (1.02) 0.390 (9.90) 0.332 (8.43) 0.070 (1.77) 0.040 (1.02) SEATING PLANE SEATING PLANE 0.260 (6.60) 0.240 (6.10) 0.320 (8.13) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.320 (8.13) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.012 (0.30) 0.008 (0.20) 0.025 (0.63) 0.020 (0.51) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 (2.54) 0.100 [2.54] 0.035 (0.88) 0.006 (0.16) 0.020 (0.50) 0.016 (0.41) 15° 0.012 (0.30) 0.4" Lead Spacing Recommended Pay Layout for Surface Mount Leadform 0.350 (8.89) 0.320 (8.13) PIN 1 ID 0.070 (1.78) 0.260 (6.60) 0.240 (6.10) 0.060 (1.52) SEATING PLANE 0.070 (1.77) 0.040 (1.02) 0.415 (10.54) 0.014 (0.36) 0.010 (0.25) 0.100 (2.54) 0.295 (7.49) 0.030 (0.76) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.012 (0.30) 0.008 (0.21) 0.100 [2.54] 0.425 (10.80) 0.400 (10.16) Note: All dimensions are in inches (millimeters). ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.0 www.fairchildsemi.com 7 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler Package Dimensions 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler Ordering Information Suffix Example Option No Suffix 4N32M S 4N32SM SR2 4N32SR2M T 4N32TM 0.4" Lead Spacing V 4N32VM VDE 0884 TV 4N32TVM VDE 0884, 0.4" Lead Spacing SV 4N32SVM VDE 0884, Surface Mount SR2V 4N32SR2VM Standard Through Hole Device Surface Mount Lead Bend Surface Mount; Tape and reel VDE 0884, Surface Mount, Tape & Reel Marking Information 1 V 3 4N29 2 X YY Q 6 5 4 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code, e.g., ‘7’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.0 www.fairchildsemi.com 8 12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 Ø1.5 MIN 4.0 ± 0.1 0.30 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 Ø1.5 ± 0.1/-0 10.1 ± 0.20 0.1 MAX 24.0 ± 0.3 User Direction of Feed Note: All dimensions are in millimeters. Reflow Soldering Profile 300 280 260 240 220 200 180 160 °C 140 120 100 80 60 40 20 0 260°C >245°C = 42 Sec Time above 183°C = 90 Sec 1.822°C/Sec Ramp up rate 33 Sec 0 60 120 180 270 360 Time (s) ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.0 www.fairchildsemi.com 9 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler Tape Dimensions ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ DOME™ 2 E CMOS™ ® EcoSPARK EnSigna™ FACT Quiet Series™ ® FACT ® FAST FASTr™ FPS™ ® FRFET GlobalOptoisolator™ GTO™ Power-SPM™ ® PowerTrench Programmable Active Droop™ ® QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ ScalarPump™ SMART START™ ® SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ ® The Power Franchise HiSeC™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ MICROCOUPLER™ MicroPak™ MICROWIRE™ Motion-SPM™ MSX™ MSXPro™ OCX™ OCXPro™ ® OPTOLOGIC ® OPTOPLANAR PACMAN™ PDP-SPM™ POP™ ® Power220 ® Power247 PowerEdge™ PowerSaver™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyWire™ TruTranslation™ µSerDes™ ® UHC UniFET™ VCX™ Wire™ ™ TinyBoost™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I27 ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.0 www.fairchildsemi.com 10 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.