VISHAY MBRB30H50CT

New Product
MBR(F,B)30H35CT thru MBR(F,B)30H60CT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
ITO-220AB
2
3
1
1
MBR30HxxCT
PIN 1
PIN 2
PIN 3
CASE
2
3
MBRF30HxxCT
PIN 1
PIN 2
PIN 3
TO-263AB
K
2
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
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MBRB30HxxCT
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC-Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
35 V to 60 V
IFSM
150 A
VF
0.56 V, 0.59 V
IR
80 µA, 60 µA
TJ max.
175 °C
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
35
45
50
60
V
IF(AV)
30
15
A
Non-repetitive avalanche energy per diode
at 25 °C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150
A
Peak repetitive reverse surge current per diode
at tp = 2.0 µs, 1 kHz
IRRM
1.0
0.5
A
Peak non-repetitive reverse energy
(8/20 µs waveform)
ERSM
25
20
mJ
Max. average forward rectified
current (Fig. 1)
Document Number: 88866
Revision: 31-Jul-08
total device
per diode
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
New Product
MBR(F,B)30H35CT thru MBR(F,B)30H60CT
Vishay General Semiconductor
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT
Electrostatic discharge capacitor voltage human
body model: C = 100 pF, R = 1.5 kΩ
VC
UNIT
25
kV
dV/dt
10 000
V/µs
TJ
- 65 to + 175
°C
Storage temperature range
TSTG
- 65 to + 175
°C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
Voltage rate of change (rated VR)
Operating junction temperature range
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward
voltage per diode (1)
IF = 15 A
IF = 15 A
IF = 30 A
IF = 30 A
Maximum reverse current
at rated VR per diode (2)
SYMBOL
MBR30H35CT
MBR30H45CT
MBR30H50CT
MBR30H60CT
UNIT
TYP.
MAX.
TYP.
MAX.
0.62
0.56
0.73
0.67
0.55
0.68
0.68
0.59
0.83
0.71
V
80
15
4.0
60
15
µA
mA
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VF
0.49
0.62
TJ = 25 °C
TJ = 125 °C
IR
5.0
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Thermal resistance, junction to case per diode
SYMBOL
MBR
MBRF
MBRB
UNIT
RθJC
1.5
4.5
1.5
°C/W
ORDERING INFORMATION
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR30H45CT-E3/45
1.85
45
50/tube
Tube
ITO-220AB
MBRF30H45CT-E3/45
1.99
45
50/tube
Tube
TO-263AB
MBRB30H45CT-E3/45
1.35
45
50/tube
Tube
TO-263AB
MBRB30H45CT-E3/81
1.35
81
800/teel
Tape and reel
TO-220AB
MBR30H45CTHE3/45 (1)
1.85
45
50/tube
Tube
ITO-220AB
MBRF30H45CTHE3/45 (1)
1.99
45
50/tube
Tube
TO-263AB
MBRB30H45CTHE3/45 (1)
1.35
45
50/tube
Tube
TO-263AB
(1)
1.35
81
800/teel
Tape and reel
MBRB30H45CTHE3/81
Note:
(1) Automotive grade AEC-Q101 qualified
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88866
Revision: 31-Jul-08
New Product
MBR(F,B)30H35CT thru MBR(F,B)30H60CT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
MBR, MBRB
30
MBRF
20
10
0
25
50
75
100
125
150
TJ = 150 °C
1
TJ = 125 °C
0.1
MBR30H35CT - MBR30H45CT
MBR30H50CT - MBR30H60CT
0.01
0.001
175
TJ = 25 °C
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Figure 1. Forward Derating Curve
Figure 4. Typical Reverse Characteristics Per Diode
150
10 000
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
Junction Capacitance (pF)
125
100
75
50
25
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
MBR30H35CT - MBR30H45CT
MBR30H50CT - MBR30H60CT
0
100
10
1
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 5. Typical Junction Capacitance Per Diode
10
TJ = 150 °C
10
TJ = 25 °C
1
TJ = 125 °C
0.1
MBR30H35CT - MBR30H45CT
MBR30H50CT - MBR30H60CT
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Transient Thermal Impedance (°C/W)
100
Instantaneous Forward Current (A)
10
0.0001
0
Peak Forward Surge Current (A)
Instantaneous Reverse Leakage
Current (mA)
Average Forward Current (A)
40
1
0.1
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
Document Number: 88866
Revision: 31-Jul-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
New Product
MBR(F,B)30H35CT thru MBR(F,B)30H60CT
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
PIN
2
3
0.160 (4.06)
0.140 (3.56)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
2
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
3
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.560 (14.22)
0.530 (13.46)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.671 (17.04)
0.651 (16.54)
PIN
1
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.603 (15.32)
0.573 (14.55)
7° REF.
0.076 (1.93) REF.
45° REF.
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
0.190 (4.83)
0.170 (4.32)
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
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0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.33 (8.38) MIN.
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88866
Revision: 31-Jul-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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