VISHAY MBR20H150CT

MBR20H150CT, MBRF20H150CT & SB20H150CT-1
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 µA
FEATURES
ITO-220AB
TO-220AB
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
3
3
MBR20H150CT
MBRF20H150CT
1
2
1
2
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TO-262AA
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling and
polarity protection applications.
1
2
3
SB20H150CT-1
PIN 1
PIN 2
PIN 3
CASE
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL 94V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
150 V
IFSM
200 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
VF
0.75 V
Mounting Torque: 10 in-lbs maximum
TJ
175 °C
Polarity: As marked
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR20H150CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
150
V
Working peak reverse voltage
VRWM
150
V
VDC
150
V
IF(AV)
20
10
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
200
A
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
IRRM
1.0
A
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)
ERSM
10
mJ
EAS
11.25
mJ
Maximum DC blocking voltage
Maximum average forward rectified current
total device
per diode
Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.5 A, L = 10 mH
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min
Document Number: 88864
Revision: 18-Apr-08
dV/dt
10 000
V/µs
TJ, TSTG
- 65 to + 175
°C
VAC
1500
V
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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1
MBR20H150CT, MBRF20H150CT & SB20H150CT-1
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
per diode (1)
IF = 10 A
IF = 10 A
IF = 20 A
IF = 20 A
Maximum reverse current per diode
at working peak reverse voltage (1)
SYMBOL
VALUE
UNIT
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
VF
0.90
0.75
0.99
0.86
V
TJ = 25 °C
TJ = 125 °C
IR
5.0
1.0
µA
mA
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
MBR
MBRF
MBRB
UNIT
RθJC
2.2
4.2
2.2
°C/W
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR20H150CT-E3/45
PREFERRED P/N
2.06
45
50/tube
Tube
ITO-220AB
MBRF20H150CT-E3/45
2.20
45
50/tube
Tube
TO-262AA
SB20H150CT-1E3/45
1.58
45
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
30
260
Peak Forward Surge Current (A)
Average Forward Current (A)
240
25
MBR, MBRB
20
MBRF
15
10
5
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
220
200
180
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Derating Curve (Total)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88864
Revision: 18-Apr-08
MBR20H150CT, MBRF20H150CT & SB20H150CT-1
Vishay General Semiconductor
10 000
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TJ = 175 °C
10
TJ = 125 °C
TJ = 75 °C
1
TJ = 25 °C
1000
100
10
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
100
1000
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
10 000
TJ = 175 °C
100
TJ = 125 °C
10
1
TJ = 75 °C
0.1
TJ = 25 °C
0.01
10
20
30
40
50
60
70
80
90
100
10
MBRF
MBR, MBRB
1
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
Document Number: 88864
Revision: 18-Apr-08
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
MBR20H150CT, MBRF20H150CT & SB20H150CT-1
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.055 (1.40)
0.047 (1.20)
0.398 (10.10)
0.382 (9.70)
0.343 (8.70)
TYP.
ITO-220AB
0.185 (4.70)
0.169 (4.30)
0.150 (3.80)
0.139 (3.54)
DIA.
0.114 (2.90)
0.106 (2.70)
0.408 (10.36)
0.392 (9.96)
0.055 (1.40)
0.049 (1.25)
1.29 (3.28)
DIA.
1.21 (3.08)
0.138 (3.50)
0.122 (3.10)
0.154 (3.90)
0.138 (3.50)
0.067 (1.70)
TYP.
0.331 (8.40)
TYP.
1
PIN
2 3
0.370 (9.40)
0.354 (9.00)
0.630 (16.00)
0.614 (15.60)
1.161 (29.48)
1.106 (28.08)
0.118 (3.00)
TYP.
1
0.102 (2.60)
0.087 (2.20)
0.523 (13.28)
0.507 (12.88)
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) TYP.
PIN
2
0.264 (6.70)
0.248 (6.50)
0.320 (8.12)
0.304 (7.72)
0.633 (16.07)
0.601 (15.67)
3
0.117 (2.96)
0.101 (2.56)
0.035 (0.90)
0.028 (0.70)
0.100 (2.54)
TYP.
0.270 (6.88)
0.255 (6.48)
0.638 (16.20)
0.598 (15.20)
0.634 (16.10)
0.618 (15.70)
0.193 (4.90)
0.177 (4.50)
0.108 (2.74)
0.092 (2.34)
0.396 (10.05)
0.372 (9.45)
0.024 (0.60)
0.018 (0.45)
0.039 (1.00)
0.024 (0.60)
0.058 (1.47) MAX.
0.100
(2.54) TYP.
0.200 (5.08) TYP.
0.024 (0.60)
0.018 (0.45)
TO-262AA
0.398 (10.10)
0.382 (9.70)
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.039 (1.00)
0.055 (1.40)
0.049 (1.25)
K
0.370 (9.40)
0.354 (9.00)
1
PIN
2
3
0.425 (10.80)
0.393 (10.00)
0.488 (12.4)
0.472 (12.00)
0.102 (2.60)
0.087 (2.20)
0.523 (13.28)
0.507 (12.88)
0.035 (0.90)
0.028 (0.70)
0.100
(2.54) TYP.
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4
0.405 (10.28)
0.389 (9.88)
0.062 (1.57)
0.054 (1.37)
0.024 (0.60)
0.018 (0.45)
0.200 (5.08) TYP.
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88864
Revision: 18-Apr-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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