LIGITEK LSRFVG3393

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
DUAL COLOR LED LAMPS
LSRFVG3393
DATA SHEET
DOC. NO :
QW0905- LSRFVG3393
REV.
:
A
DATE
:
19 - Jul. - 2005
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/5
PART NO. LSRFVG3393
Package Dimensions
5.0
5.9
7.6 8.6
10.5± 0.5
VG SRF
1.5
MAX
□0.5
TYP
+
1
18.0MIN
1
2
3
2
+
3
1.ANODE GREEN
2.COMMON CATHODE
3.ANODE RED
2.0MIN
2.0MIN
2.54TYP
2.54TYP
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
Directivity Radiation
0°
-30°
30°
-60°
100% 75% 50%
60°
25%
0
25% 50% 75% 100%
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 2/5
PART NO. LSRFVG3393
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
SRF
VG
Forward Current
IF
30
30
mA
Peak Forward Current
Duty 1/10@10KHz
IFP
90
120
mA
Power Dissipation
PD
75
100
mW
μA
Reverse Current @5V
Ir
Electrostatic Discharge
ESD
Operating Temperature
Topr
-40 ~ +85
℃
Storage Temperature
Tstg
-40 ~ +100
℃
Soldering Temperature
Tsol
10
2000
V
----
Max 260 ℃ for 5 sec Max
(2mm from body)
Typical Electrical & Optical Characteristics (Ta=25 ℃)
PART NO
COLOR
MATERIAL
Emitted
AlGaInP
Red
GaP
Green
Peak Dominant
wave
wave
length
length
λPnm λDnm
Spectral
halfwidth
△λnm
Lens
Forward
voltage
@20mA(V)
Luminous
Viewing
intensity
angle
@20mA(mcd) 2θ 1/2
(deg)
Min. Max.
Min.
Typ.
----
630
20
1.5
2.4
550
900
40
565
----
30
1.7
2.6
160
300
40
White Diffused
LSRFVG3393
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ± 15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 3/5
PART NO. LSRFVG3393
Typical Electro-Optical Characteristics Curve
SRF CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
2.5
2.0
1.5
1.0
0.5
0.0
1.0
2.0
3.0
4.0
5.0
1.0
10
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
3.0
Relative Intensity@20mA
Normalize @25 ℃
1.2
Forward Voltage@20mA
Normalize @25 ℃
1000
Forward Current(mA)
Forward Voltage(V)
1.1
1.0
0.9
0.8
-40
-20
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
650
Wavelength (nm)
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
Ambient Temperature( ℃)
Ambient Temperature(℃)
Relative Intensity@20mA
100
700
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LSRFVG3393
Page 4/5
Typical Electro-Optical Characteristics Curve
VG CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.5
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
2.0
1.0
3.0
4.0
5.0
1.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
500
550
600
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature(℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25 ℃
Forward Voltage@20mA
Normalize @25 ℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
650
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 5/5
PART NO. LSRFVG3393
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resisance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under ondition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5 ℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hous.
1.Ta=105 ℃±5℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5 ℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5 ℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11