LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY LA112B/VY.VG-4 DATA SHEET DOC. NO : QW0905-LA112B/VY.VG-4 REV. : A DATE : 28 - Dec - 2004 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA112B/VY.VG-4 Page 1/5 Package Dimensions 2.5±0.5 4.3 8.2 VY 5.0 9.6 2.9 VG 2.65 □0.5 3.2±0.3 TYP 2.54TYP + - 4.45±0.5 6.99±0.5 LVY2643-1 LVG2643-1 Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without not ice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA112B/VY.VG-4 Page 2/5 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT VY VG Forward Current IF 30 30 mA Peak Forward Current Duty 1/10@10KHz IFP 60 120 mA Power Dissipation PD 75 100 mW Reverse Current @5V Ir 10 10 μA Electrostatic Discharge ESD 2000 ---- V Operating Temperature Topr -40 ~ +85 ℃ Storage Temperature Tstg -40 ~ +100 ℃ Soldering Temperature Tsol Max 260 ℃ for 5 sec Max (2mm from body) Typical Electrical & Optical Characteristics (Ta=25 ℃) PART NO COLOR MATERIAL Emitted AlGaInP Yellow GaP Green LA112B/VY.VG-4 Forward Luminous Viewing Peak Dominant Spectral voltage intensity angle wave wave halfwidth @20mA(V) @20mA(mcd) length length θ 1/2 2 △λ nm (deg) λPnm λDnm Lens Min. Max. Min. Typ. ---- 590 20 1.7 2.6 160 350 40 565 ---- 30 1.7 2.6 40 Water Clear Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 65 120 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/5 PART NO. LA112B/VY.VG-4 Typical Electro-Optical Characteristics Curve VY CHIP Fig.2 Relative Intensity vs. Forward Current Fig.1 Forward current vs. Forward Voltage 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0.0 1.5 1.0 2.0 2.5 3.0 1.0 10 Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature 1.2 3.0 Relative Intensity@20mA Normalize @25 ℃ Forward Voltage@20mA Normalize @25 ℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature(℃) Ambient Temperature(℃) Relative Intensity@20mA 100 650 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA112B/VY.VG-4 Page 4/5 Typical Electro-Optical Characteristics Curve VG CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 5.0 1.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25 ℃ Forward Voltage@20mA Normalize @25 ℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA112B/VY.VG-4 Page 5/5 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95 % 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5 ℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11