MA-COM AM50

Low Noise Amplifier
1.575 GHz
AM50-0002
V 2.00
Features
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SO-8
Low Noise Figure: 1.15 dB
High Gain: 27 dB
Low Power Consumption: 3 to 5 V, 20 mA
High Dynamic Range
Low Cost SOIC 8 Plastic Package
Description
M/A-COM's AM50-0002 is a high performance GaAs
MMIC low noise amplifier in a low cost SOIC 8-lead surface mount plastic package. The AM50-0002 employs a
monolithic 3-stage self-bias design and a simple external
matching network to obtain minimum noise figure. It can
be biased using 3- or 5-volt supplies.
The AM50-0002 is ideally suited for use where low noise
figure, high gain, high dynamic range and low power
consumption are required. Typical applications include
receiver front ends in the Global Positioning System
(GPS) market, as well as standard gain blocks, buffer
amps, driver amps and IF amps in both fixed and
portable systems.
Ordering Information
Part Number
Package
AM50-0002
AM50-0002TR
AM50-0002RTR
AM50-0002SMB
M/A-COM's AM50-0002 is fabricated using a mature 0.5micron gate length GaAs process. The process features
full passivation for increased performance reliability.
SOIC 8-Lead Plastic
Forward Tape and Reel*
Reverse Tape and Reel*
Designer’s Kit
If specific reel size is required, consult factory for part number
* assignment.
Electrical Specifications1
TA = +25°C, Z0 = 50Ω, VDD = +5V, PIN = -35 dBm, f= 1.575 GHz
Units
Min.
Typ.
Max.
Gain
Parameter
dB
25
27
29
Noise Figure
dB
1.15
1.4
Input VSWR
2.0:1
Output VSWR
1.5:1
Output1 dB Compression
dBm
1
Input IP3
dBm
-14
Reverse Isolation
dB
48
Bias Current
mA
1. See following pages for 3-volt data.
15
20
25
Low Noise Amplifier
AM50-0002
V 2.00
1
Absolute Maximum Ratings
Parameter
VDD
Input Power
Channel Temperature2
Operating Temperature
Storage Temperature
Functional Diagram
Absolute Maximum
+10 VDC
+17 dBm
+150°C
-40°C to 85°C
-65°C to 150°C
GND
GND
T1
GND
RF IN
T2
1. Operation of this device outside these limits may cause
permanent damage.
2. Typical thermal resistance ( ujc) = +165°C/W
GND
RF OUT, VDD
GND
GND
Recommended PCB Configuration
Dimensions in inches (mm)
0.244
(6.20)
2X R 0.025 (0.64)
PLATED THRU
0.072
(1.83)
0.060
(1.52)
0.112
(2.84) 0.245
(6.22)
RF IN
0.024
(0.61)
T1
T2
0.030
(0.76)
Frequency = 1.575 GHz
Impedance
Electrical Length
57.2 Ω
36.0°
82.7 Ω
16.2°
3. Pins 1, 3, 4, 5, 7 and 8 must be RF and DC grounded as shown.
4. Pin 2 is the RF input and must be connected to the simple matching
network shown.
5. Pin 6 is the RF output. VDD is also applied on pin 6.
RF OUT
0.109
(2.77)
0.060
(1.52)
0.172
(4.37)
12 X R 0.008 (0.20)
PLATED THRU
FR-4 circuit board, thickness = 0.016 inches (0.41)
Typical Performance
GAIN vs FREQUENCY, TA = +25°C
1.4
28
NOISE FIGURE vs FREQUENCY, TA = +25°C
5V
1.3
26
3V
1.2
24
3V
22
1.1
20
1.0
5V
1.3
1.4
1.5
1.6
FREQUENCY (GHz)
1.7
1.8
1.50
1.52
1.54
1.56
FREQUENCY (GHz)
1.58
1.60
Low Noise Amplifier
AM50-0002
V 2.00
VSWR vs FREQUENCY @ 5 V, TA = +25°C
INPUT IP3 vs FREQUENCY, TA = +25°C
3.0
-12
2.5
-13
5V
Input
2.0
-14
Output
1.5
3V
-15
-16
1.0
1.3
1.4
1.5
1.6
1.7
1.8
1.50
1.52
1.54
1.56
1.58
1.60
FREQUENCY (GHz)
FREQUENCY (GHz)
GAIN vs FREQUENCY @ 5 V
NOISE FIGURE vs FREQUENCY @ 5 V
1.6
28
-40°C
+25°C
1.4
26
+25°C
+85°C
24
+85°C
1.2
22
-40°C
1.0
20
0.8
1.3
1.4
1.5
1.6
1.7
1.8
FREQUENCY (GHz)
Additional information is available in Application Note M540,
“M/A-COM GaAs MMIC LNA SOIC-8 Platform.”
1.50
1.52
1.54
1.56
FREQUENCY (GHz)
1.58
1.60