Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-03184 Features • Cascadable 50 Ω Gain Block • Low Noise Figure: 2.6 dB Typical at 1.5 GHz • High Gain: 25 dB Typical at 1.5 GHz • 3 dB Bandwidth: DC to 2.5 GHz • Unconditionally Stable (k>1) • Low Power Dissipation: 10 mA Bias • Low Cost Plastic Package Description The INA-03184 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifier housed in a low cost surface mount plastic package. It is designed for narrow or wide bandwidth commercial and industrial applications that require high gain and low noise IF or RF amplification with minimum power consumption. The INA series of MMICs is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, ISOSAT™-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability. Typical Biasing Configuration C bypass1 (Optional) VCC RFC (Optional) Rbias 4 Cblock RF IN Cblock 3 1 2 RF OUT Vd = 4.0 V (Nominal) Note: 1. VSWR can be improved by bypassing a 100–120 Ω bias resistor directly to ground. See AN-S012: Low Noise Amplifiers. 5965-9678E 6-108 84 Plastic Package INA-03184 Absolute Maximum Ratings Absolute Maximum[1] Parameter Device Current Power Dissipation[2] RF Input Power Junction Temperature Storage Temperature 25 mA 200 mW +13 dBm 150°C –65 to 150°C Thermal Resistance: θjc = 100°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Derate at 10 mW/°C for TC > 130°C. INA-03184 Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Id = 10 mA, ZO = 50 Ω GP Power Gain (|S21| 2) ∆GP Gain Flatness f3 dB 3 dB Bandwidth[2] ISO Reverse Isolation (|S12| 2) VSWR Units Min. f = 1.5 GHz dB 23.0 f = 0.1 to 2.0 GHz dB ± 0.8 GHz 2.5 dB 35 f = 1.5 GHz Typ. 25.0 Input VSWR f = 0.01 to 2.0 GHz 2.0:1 Output VSWR f = 0.01 to 2.0 GHz 3.0:1[3] NF 50 Ω Noise Figure f = 1.5 GHz dB 2.6 P1 dB Output Power at 1 dB Gain Compression f = 1.5 GHz dBm –2.0 IP3 Third Order Intercept Point f = 1.5 GHz dBm 7 tD Group Delay f = 1.5 GHz psec 210 Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C 3.0 Max. 4.0 5.0 +4 Notes: 1. The recommended operating current range for this device is 8 to 18 mA. Typical performance as a function of current is on the following page. 2. Referenced from 10 MHz Gain (GP). 3. VSWR can be improved by bypassing a 100–200 Ω bias resistor directly to ground. See AN-S012: MagIC Low Noise Amplifiers. INA-03184 Part Number Ordering Information Part Number INA-03184-TR1 INA-03184-BLK No. of Devices 1000 100 Container 7" Reel Antistatic Bag For more information, see “Tape and Reel Packaging for Semiconductor Devices”. 6-109 INA-03184 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 10 mA) S11 S21 S12 S22 Freq. GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k 0.05 0.10 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.50 3.00 3.50 4.00 .32 .32 .32 .32 .32 .32 .32 .30 .31 .30 .26 .22 .09 .14 .24 .29 179 176 172 165 158 151 144 135 126 117 102 92 91 160 151 139 25.6 25.6 25.6 2.5 25.4 25.4 25.2 25.2 25.2 25.1 24.9 24.4 22.2 18.9 15.4 12.4 19.14 19.05 19.05 18.78 18.71 18.53 18.18 18.27 18.10 17.92 17.49 16.62 12.88 8.79 5.92 4.18 –3 –7 –14 –29 –43 –57 –72 –86 –102 –117 –135 –153 168 134 108 87 –37.1 –37.1 –37.1 –37.1 –36.5 –36.5 –35.9 –35.9 –35.4 –34.9 –34.4 –34.0 –33.6 –32.8 –32.0 –30.8 .014 .014 .014 .014 .015 .015 .016 .016 .017 .018 .019 .020 .021 .023 .025 .029 3 4 6 10 11 13 21 25 30 38 44 49 57 65 69 81 .55 .57 .55 .53 .51 .51 .50 .50 .49 .48 .45 .40 .26 .22 .26 .28 0 –3 –5 –11 –14 –17 –20 –23 –29 –34 –41 –50 –48 –33 –33 –43 1.48 1.45 1.48 1.53 1.49 1.50 1.46 1.46 1.42 1.38 1.39 1.44 1.87 2.40 3.01 3.52 Note: 1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE MODELS section. INA-03184 Typical Performance, TA = 25°C (unless otherwise noted) 30 25 5.0 30 Gain Flat to DC TC = +85°C TC = +25°C TC = –25°C 20 4.0 25 f = 0.1–2 GHz 25 10 0.1 10 0.2 0.5 1.0 2.0 5 1.0 5.0 10 0 0 2 4 6 8 Figure 1. Typical Gain and Noise Figure vs. Frequency, TA = 25°C, Id = 10 mA. Figure 2. Device Current vs. Voltage. 15 20 25 Figure 3. Power Gain vs. Current. 8 27 10 Id (mA) Vd (V) 5.0 26 Gp 25 4.0 4 –2 –4 Id = 16 mA NF (dB) 0 P1 dB P1 dB (dBm) 24 P1 dB (dBm) Gp (dB) 5 10 FREQUENCY (GHz) NF (dB) 20 15 2.0 15 Gp (dB) 3.0 Id (mA) 20 NF (dB) Gp (dB) f = 3 GHz 15 0 Id = 10 mA 3.0 Id = 8 mA –6 3.0 NF –4 Id = 8 mA 2.0 Id = 10 to 16 mA 2.0 –25 +25 +85 TEMPERATURE (°C) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. CaseTemperature, f = 1.5 GHz, Id = 10 mA. –8 0.1 0.2 0.5 1.0 2.0 5.0 FREQUENCY (GHz) Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. 6-110 1.0 0.1 0.2 0.5 1.0 2.0 5.0 FREQUENCY (GHz) Figure 6. Noise Figure vs. Frequency. 84 Plastic Package Dimensions 0.51 (0.020) 4 RF OUTPUT AND DC BIAS 031 RF INPUT GROUND 3 1 GROUND 2 2.15 (0.085) 5° 0.20 ± 0.050 (0.008 ± 0.002) 1.52 ± 0.25 (0.060 ± 0.010) 0.51 (0.020) 5.46 ± 0.25 (0.215 ± 0.010) DIMENSIONS ARE IN MILLIMETERS (INCHES) 6-111