NUP4201DR2 Low Capacitance Surface Mount TVS for High-Speed Data Interfaces The NUP4201DR2 transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD, EFT, and lightning. SO−8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 500 WATTS PEAK POWER 6 VOLTS Features • SO−8 Package • Peak Power − 500 Watts 8 x 20 mS • ESD Rating: • • http://onsemi.com IEC 61000−4−2 (ESD) 15 kV (air) 8 kV (contact) IEC 61000−4−4 (EFT) 40 A (5/50 ns) IEC 61000−4−5 (lightning) 25 A (8/20 ms) UL Flammability Rating of 94 V−0 Pb−Free Package is Available PIN CONFIGURATION AND SCHEMATIC I/O 1 1 8 REF 2 Typical Applications REF 1 2 7 I/O 4 • • • • • • REF 1 3 6 I/O 3 High Speed Communication Line Protection USB Power and Data Line Protection Video Line Protection Base Stations HDSL, IDSL Secondary IC Side Protection Microcontroller Input Protection I/O 2 4 Peak Power Dissipation 8 x 20 mS @ TA = 25°C (Note 1) Junction and Storage Temperature Range Lead Solder Temperature − Maximum 10 Seconds Duration SOIC−8 CASE 751 PLASTIC 8 1 MARKING DIAGRAM MAXIMUM RATINGS Rating 5 REF 2 Symbol Value Unit Ppk 500 W TJ, Tstg −55 to +150 °C TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Non−repetitive current pulse 8 x 20 mS exponential decay waveform 8 P4201 AYWWG G 1 P4201 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NUP4201DR2 SO−8 2500/Tape & Reel SO−8 (Pb−Free) 2500/Tape & Reel NUP4201DR2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 August, 2008 − Rev. 6 1 Publication Order Number: NUP4201DR2/D NUP4201DR2 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit VBR 6.0 − − V Reverse Leakage Current @ VRWM = 5.0 Volts IR N/A − 10 mA Maximum Clamping Voltage @ IPP = 1.0 A, 8 x 20 mS VC N/A − 9.8 V Maximum Clamping Voltage @ IPP = 10 A, 8 x 20 mS VC N/A − 12 V Maximum Clamping Voltage @ IPP = 25 A, 8 x 20 mS VC N/A − 25 V Between I/O Pins and Ground @ DC Bias = 0 V, 1.0 MHz Capacitance − 5.0 10 pF Between I/O Pins and I/O @ DC Bias = 0 V, 1.0 MHz Capacitance − 2.5 5.0 pF Reverse Breakdown Voltage @ It = 1.0 mA ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT QVBR IF VC VBR VRWM Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM IR VF IT Breakdown Voltage @ IT Test Current IPP Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK Uni−Directional TVS http://onsemi.com 2 V NUP4201DR2 9 8 8 7 IR, REVERSE LEAKAGE (mA) VZ, REVERSE BREAKDOWN (V) TYPICAL CHARACTERISTICS 7 6 5 4 3 2 1 0 −100 −50 0 50 100 T, TEMPERATURE (°C) 150 6 5 4 3 2 1 0 −100 200 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 100 150 200 35 PEAK VALUE IRSM @ 8 ms 80 50 Figure 2. Reverse Leakage versus Temperature VC, CLAMPING VOLTAGE (V) % OF PEAK PULSE CURRENT tr 90 0 T, TEMPERATURE (°C) Figure 1. Reverse Breakdown versus Temperature 100 −50 60 30 25 20 15 10 5 0 80 0 10 20 30 40 50 60 70 80 IPP, PEAK PULSE CURRENT (A) t, TIME (ms) Figure 4. Clamping Voltage versus Peak Pulse Current Figure 3. 8 x 20 ms Pulse Waveform http://onsemi.com 3 90 NUP4201DR2 APPLICATIONS INFORMATION Option 2 Protection of four data lines with bias and power supply isolation resistor. The new NUP4201DR2 is a low capacitance TVS diode array designed to protect sensitive electronics such as communications systems, computers, and computer peripherals against damage due to ESD events or transient overvoltage voltage conditions. Because of its low capacitance, it can be used in high speed I/O data lines. The integrated design of the NUP4201DR2 offers surge rated, low capacitance steering diodes and a TVS diode integrated in a single package (SO−8). If a transient condition occurs, the steering diodes will drive the transient to the positive rail of the power supply or to ground. The TVS device protects the power line against overvoltage conditions to avoid damage to the power supply and any downstream components. I/O 1 I/O 2 VCC 10 K 1 8 2 7 3 6 4 5 I/O 3 I/O 4 NUP4201DR2 Configuration Options The NUP4201DR2 is able to protect up to four data lines against transient overvoltage conditions by driving them to a fixed reference point for clamping purposes. The steering diodes will be forward biased whenever the voltage on the protected line exceeds the reference voltage (Vcc+Vf). The diodes will force the transient current to bypass the sensitive circuit. Data lines are connected at pins 1, 4, 6 and 7. The negative reference is connected at pins 5 and 8. These pins must be connected directly to ground by using a ground plane to minimize the PCB’s ground inductance. It is very important to reduce the PCB trace lengths as much as possible to minimize parasitic inductances. Figure 6. The NUP4201DR2 can be isolated from the power supply by connecting a series resistor between pins 2 and 3 and Vcc. A 10 kW resistor is recommended for this application. This will maintain a bias on the internal TVS and steering diodes, reducing their capacitance. Option 3 Protection of four data lines using the internal TVS diode as reference. I/O 1 I/O 2 Option 1 Protection of four data lines and the power supply using Vcc as reference. I/O 1 I/O 2 1 8 NC 2 7 NC 3 6 4 5 I/O 3 VCC 1 8 2 7 Figure 7. 3 6 4 5 In applications lacking a positive supply reference or those cases in which a fully isolated power supply is required, the internal TVS can be used as the reference. For these applications, pins 2 and 3 are not connected. In this configuration, the steering diodes will conduct whenever the voltage on the protected line exceeds the working voltage of the TVS plus one diode drop (Vc=Vf + VTVS). I/O 4 I/O 3 I/O 4 Figure 5. For this configuration, connect pins 2 and 3 directly to the positive supply rail (Vcc), the data lines are referenced to the supply voltage. The internal TVS diode prevents overvoltage on the supply rail. Biasing of the steering diodes reduces their capacitance. ESD Protection of Power Supply Lines When using diodes for data line protection, referencing to a supply rail provides advantages. Biasing the diodes reduces their capacitance and minimizes signal distortion. Implementing this topology with discrete devices does have disadvantages. This configuration is shown below: http://onsemi.com 4 NUP4201DR2 Power Supply IESDpos VCC Protected Data Line Device inductance will provide significant benefits in transient immunity. Even with good board layout, some disadvantages are still present when discrete diodes are used to suppress ESD events across datalines and the supply rail. Discrete diodes with good transient power capability will have larger die and therefore higher capacitance. This capacitance becomes problematic as transmission frequencies increase. Reducing capacitance generally requires reducing die size. These small die will have higher forward voltage characteristics at typical ESD transient current levels. This voltage combined with the smaller die can result in device failure. The ON Semiconductor NUP4201DR2 was developed to overcome the disadvantages encountered when using discrete diodes for ESD protection. This device integrates a TVS diode within a network of steering diodes. D1 IESDpos D2 IESDneg IESDneg VF + VCC −VF Figure 8. Looking at the figure above, it can be seen that when a positive ESD condition occurs, diode D1 will be forward biased while diode D2 will be forward biased when a negative ESD condition occurs. For slower transient conditions, this system may be approximated as follows: For positive pulse conditions: Vc = Vcc + VfD1 For negative pulse conditions: Vc = −VfD2 ESD events can have rise times on the order of some number of nanoseconds. Under these conditions, the effect of parasitic inductance must be considered. A pictorial representation of this is shown below. D3 D5 D7 D2 D4 D6 D8 0 Power Supply Figure 10. NUP4201DR2 Equivalent Circuit IESDpos VCC Protected Device D1 During an ESD condition, the ESD current will be driven to ground through the TVS diode as shown below. D1 IESDpos D2 VC = VCC + Vf + (L diESD/dt) IESDneg IESDneg Data Line Power Supply VCC D1 Protected Device VC = −Vf − (L diESD/dt) Figure 9. IESDpos Data Line D2 An approximation of the clamping voltage for these fast transients would be: For positive pulse conditions: Vc = Vcc + Vf + (L diESD/dt) For negative pulse conditions: Vc = −Vf – (L diESD/dt) As shown in the formulas, the clamping voltage (Vc) not only depends on the Vf of the steering diodes but also on the L diESD/dt factor. A relatively small trace inductance can result in hundreds of volts appearing on the supply rail. This endangers both the power supply and anything attached to that rail. This highlights the importance of good board layout. Taking care to minimize the effects of parasitic Figure 11. The resulting clamping voltage on the protected IC will be: Vc = VF + VTVS. The clamping voltage of the TVS diode is provided in Figure 4 and depends on the magnitude of the ESD current. The steering diodes are fast switching devices with unique forward voltage and low capacitance characteristics. http://onsemi.com 5 NUP4201DR2 TYPICAL APPLICATIONS UPSTREAM USB PORT VBUS VBUS VBUS VBUS D+ RT D+ RT D− VBUS GND USB Controller D− VBUS NUP4201DR2 CT CT DOWNSTREAM USB PORT GND VBUS NUP2201DT1 VBUS RT D+ RT D− GND CT CT DOWNSTREAM USB PORT Figure 12. ESD Protection for USB Port RJ45 Connector TX+ TX+ TX− TX− PHY Ethernet (10/100) RX+ Coupling Transformers RX+ RX− RX− NUP4201DR2 VCC GND N/C N/C Figure 13. Protection for Ethernet 10/100 (Differential mode) http://onsemi.com 6 NUP4201DR2 R1 RTIP R3 R2 RRING T1 VCC T1/E1 TRANCEIVER NUP4201DR2 R4 TTIP R5 TRING T2 Figure 14. TI/E1 Interface Protection http://onsemi.com 7 NUP4201DR2 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AH −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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