High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz MA4VAT907-1061T V3 Features • • • • • Bandwidth: 0.80 GHz to 1.0 GHz 1.0 dB Insertion Loss, Typical 12 dB Return Loss, Typical 25 dB Attenuation, Typical 50 dBm Input IP3, Typical (1MHz Offset, @+0dBm Pinc) • 0 – 3.0 Volts Control Voltage @3.3mA Typical • RoHs Compliant Extra Features • Covers the following Bands: • GSM • AMPS • Usable Bandwidth: 0.60 GHz to 1.20 GHz • 1.5 dB Insertion Loss, Typical • 1.8:1 VSWR, Typical • 18.5 dB Attenuation, Typical Description and Applications M/A-COM’s MA4VAT907-1061T is a HMIC PIN Diode Variable Attenuator which utilizes an integrated 90 degree 3dB hybrid with a pair of Silicon PIN Diodes to perform the required attenuation function as D.C. Voltage (Current) is applied. This device operates from 0 to 2.77Volts at 3.0mA typical control current for maximum attenuation. The user can add external biasing resistors to the bias ports for higher voltage requirements as required. M/A-COM’s MA4VAT907-1061T PIN Diode Variable Attenuator is designed for AGC Circuit Applications requiring: • Lower Insertion Loss • Lower distortion through attenuation • Larger dynamic range for wide spread spectrum applications SOIC-8 PIN Configuration (Topview) PIN Function Comments 1 DC1 2 GND 3 GND 4 RFin/out Symetrical as RF Input/Ouput 5 RFout/in Symetrical as RF Input/Ouput 6 GND 7 GND 8 DC2 Absolute Maximum Ratings @ +25 °C Parameter Maximum Ratings Operating Temperature -40 °C to +85 °C Storage Temperature -65 °C to +150 °C Junction Temperature +175 °C RF C.W. Incident Power +33 dBm C.W. Reversed Current @ -30 V 50nA Control Current 50 mA per Diode Notes: 1. All the above values are at +25 °C, unless otherwise noted. 2. Exceeding these limits may cause permanent damage. 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz MA4VAT907-1061T V3 Electrical Specifications @ +25 °C Parameter Frequency Band Unit Min Typ Max dB - 1.0 1.2 Input Return Loss dB 11 12 - Output Return Loss dB 11 12 - P1dB dBm 30 - - Input IP3 dBm 45 49 - Control Voltage V - 0 V @ OuA - dB 18.5 24 - Input Return Loss @ Max Attenuation dB 15 21 - Output Return Loss @ Max Attenuation dB 15 21 - Input IP3 dBm 36 39 - Control Voltage @ Max Attenuation V - 3.0 V @ 3.35 mA - Low Loss RF Parameter (Pin = +10 dBm, except for P1dB, & IP3) Insertion Loss 0.80 GHz—1.00 GHz Maximum Attenuation RF Parameter (Pin = +10 dBm, except for P1dB, & IP3) Maximum Attenuation 0.80 GHz—1.00 GHz Typical RF Performance Over Industry Designated RF Frequency Bands Band AMPS GSM Freq I. Loss Att. R. Loss IIP3 Phase -Relative- (MHz) (dB) (dB) (dB) (dBm) (Degree) RX 824-849 0.9 22 12 50 -15° TX 869-894 0.9 22 12 50 RX 880-915 1.2 20 11 50 TX 925-960 1.2 20 11 50 -20° Notes: 1. All are typical values only. 2. Relative phase is the measured Insertion Phase difference between Insertion Loss and 15 dB Attenuation. (Please refer to the plots below) 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz MA4VAT907-1061T V3 Plots of Typical RF Characteristics @ +25 °C Typical Insertion Loss & Attenuation Plot Typical Attenuation vs Voltage MA4VAT907-1061 MA4VAT907-1061 Attenuation vs Control Voltage Typical Attenuation 0 0 -5 Attenuation (dB) Attenuation (dB) -5 -10 -15 -20 -25 -10 -15 -20 -25 -30 -30 0.600 0.700 0.800 0.900 1.000 1.100 1.200 0.0 0.5 1.0 Frequency (GHz) 0V/0mA 1V/0.55mA 1.28V/0.90mA 1.87V/1.72mA 1.5 2.0 2.5 3.0 3.5 2.5 3.0 3.5 Bias Voltage (V) 2.33V/2.37mA 2.75V/2.95mA 3.0V/3.35mA 800MHz 900MHz 1000MHz Typical IIP3 vs Attenuation Plot Typical Return Loss @ All Attenuation Levels Plot MA4VAT907-1061 MA4VAT907-1061 Typical Input Return Loss Typical IP3 vs Bias Voltage @900MHz (1MHz Offset, +10dBm Pin) 0 70 60 -10 50 IP3 (dBm) Attenuation (dB) -5 -15 -20 40 30 20 10 -25 0 -30 0.600 0.700 0.800 0.900 1.000 1.100 0.0 1.200 0.5 1.0 1.5 2.0 Bias Voltage (V) Frequency (GHz) Typical Relative Phase Shift Per Attenuation (Voltage) Plot MA4VAT907-1061 Relaive Phase vs Control Voltage For Reference ONLY: • Insertion Loss 90 Relative Phase (Degree) 70 • • • • • 50 30 10 -10 -30 -50 = 0.00 V @ 0.00 mA 5dB Attenuation = 1.30 V @ 0.95 mA 10dB Attenuation = 1.94 V @ 1.78 mA 15dB Attenuation = 2.36 V @ 2.42 mA 20dB Anttenuation = 2.67 V @ 2.90 mA Max Attenuation = 2.77 V @ 3.00 mA -70 -90 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Bias Voltage (V) 800MHz 900MHz 1000MHz 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz MA4VAT907-1061T V3 Package PIN Designation, External Components, and Equivalent Circuit Cbias RF I N/OUT Lb ia s C bl o ck Control Curren t Rbias C bl o ck Lb ia s Cbias RF OUT/ IN External Bias Components Rbias= 680 Ohms ( 3.0 V @ 3.5 mA ) Lbias= 150 nH Cbias =100 pF Cblock =100 pF 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.