PHOTODIODE 100 mm2 UVG100 FEATURES • • • • • Square active area Ideal for 193-400 nm detection 100% internal QE Excellent UV response Protective cover plate Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area TEST CONDITIONS MIN 10 mm x 10 mm TYP @ 254 nm 0.08 Shunt Resistance, Rsh @ ± 10 mV 20 0.09 UNITS mm2 100 Responsivity, R 0.13 A/W MOhms Reverse Breakdown Voltage, VR IR = 1 µA 10 Capacitance, C VR = 0 V 10 Response Time, tr MAX RL = 50 Ω, VR = 10 V Volts 20 nF 10 usec THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Storage Temperature Range Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature1 -20° TO 100°C -20°C TO 80°C 100°C 240°C 1 0.08" from case for 10 seconds 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 PHOTODIODE 100 mm2 Responsivity (A/W) 0.6 UVG100 RESPONSIVITY 0.5 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013