PHOTODIODE 100 mm2 AXUV100Ti/C2 FEATURES • Square active area • 200 nm titanium & 50 nm carbon filter across top surface • Detection range 1-12 nm • Protective cover plate Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R TEST CONDITIONS MIN 10 mm x 10 mm TYP UNITS 100 mm2 Volts (see graph on next page) Reverse Breakdown Voltage, VR IR = 1 µA 10 Capacitance, C VR = 0 V 10 Shunt Resistance, Rsh MAX @ ± 10 m V 44 20 nF MOhms THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient Nitrogen or Vacuum Maximum Junction Temperature Lead Soldering Temperature1 -10° TO 40°C -20°C TO 80°C 70°C 260°C 1 0.08" from case for 10 seconds 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 RESPONSIVITY (A/W) PHOTODIODE 100 mm2 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 AXUV100Ti/C2 RESPONSIVITY 0 20 40 60 80 90 120 140 WAVELENGTH(nm) 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013