PHOTODIODE 24 mm2 UVG20S

PHOTODIODE 24 mm2
UVG20S
FEATURES
•
•
•
•
Circular active area
Ideal for 190-400 nm detection
100% internal QE
UV quartz window epoxy bonded
in place
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
mm2
24
Active Area
Ø 5.5 mm
Responsivity, R
@ 254 nm
0.105
0.115
VF = ± 10 mV
50
100
Mohm
Reverse Breakdown Voltage, VR
IR = 1 µA
10
50
Volts
Capacitance, C
VR = 0 V
Rise Time
VR = 0 V
Shunt Resistance
0.125
2.5
A/W
4
nF
4
µsec
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Storage Temperature Range
Maximum Junction Temperature
Lead Soldering Temperature1
-20° TO 80°C
80°C
240°C
1
0.0625" from case for 10 seconds.
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision September 6, 2013
PHOTODIODE 24 mm2
Responsivity (A/W)
0.6
UVG20S
RESPONSIVITY
0.5
0.4
0.3
0.2
0.1
0.0
200
300
400
500
600
700
800
900
1000
1100
Wavelength (nm)
1260 Calle Suerte, Camarillo, California 93012
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision September 6, 2013