PANJIT PPJT7600

PPJT7600
20V Complementary Enhancement Mode MOSFET – ESD Protected
Voltage
20 / -20V
Current
SOT-363
1 / -0.7A
Unit: inch(mm)
Features
Application

Advanced Trench Process Technology

Specially Designed for Switch Load, PWM Application, etc.

ESD Protected

Lead free in comply with EU RoHS 2011/65/EU directives.

Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data

Case: SOT-363 Package

Terminals: Solderable per MIL-STD-750, Method 2026

Approx. Weight: 0.0002 ounces, 0.006 grams

Marking: T60
o
Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted)
PARAMETER
SYMBOL
N-Ch LIMIT
P-Ch LIMIT
UNITS
Drain-Source Voltage
VDS
20
-20
V
Gate-Source Voltage
VGS
+8
+8
V
ID
1
-0.7
A
IDM
4
-2.8
A
Continuous Drain Current
Pulsed Drain Current
(Note 4)
Power Dissipation
Ta=25oC
o
Derate above 25 C
Operating Junction and Storage Temperature Range
PD
350
mW
2.8
mW/ oC
TJ,TSTG
-55~150
RθJA
357
o
C
Thermal resistance
-
Junction to Ambient (Note 3)
August 16,2013-REV.00
o
C/W
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PPJT7600
o
N-Channel Electrical Characteristics (TA=25 C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID= 250uA
20
-
-
V
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID= 250uA
0.7
0.8
1.1
V
VGS= 4.5V, ID= 1A
-
114
150
VGS= 2.5V, ID= 0.7A
-
160
215
VGS= 1.8V, ID= 0.3A
-
280
400
Drain-Source On-State Resistance
RDS(on)
mΩ
Zero Gate Voltage Drain Current
IDSS
VDS= 20V, VGS=0V
-
0.01
1
uA
Gate-Source Leakage Current
IGSS
VGS=+8V, VDS=0V
-
+2
+10
uA
-
1.6
-
-
0.3
-
-
0.41
-
-
105
-
-
25
-
-
15
-
-
5.8
-
25.7
-
41
-
-
31
-
-
-
1
A
0.85
1.2
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=10V, ID=1A,
VGS=4.5V (Note 1,2)
VDS=10V, VGS=0V,
f=1.0MHZ
nC
pF
Switching
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
VDD=10V, ID=1A,
VGS=4.5V, RG=6Ω
(Note 1,2)
tf
ns
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
August 16,2013-REV.00
IS
VSD
--IS= 1A, VGS=0V
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PPJT7600
o
P-Channel Electrical Characteristics (TA=25 C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID= -250uA
-20
-
-
V
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID= -250uA
-0.5
-0.64
-1
V
VGS= -4.5V, ID= -0.7A
-
260
325
VGS= -2.5V, ID= -0.6A
-
310
420
VGS= -1.8V, ID= -0.5A
-
400
600
Drain-Source On-State Resistance
RDS(on)
mΩ
Zero Gate Voltage Drain Current
IDSS
VDS=-20V, VGS=0V
-
-0.01
-1
uA
Gate-Source Leakage Current
IGSS
VGS=+8V, VDS=0V
-
+3.5
+10
uA
-
2.2
-
-
0.4
-
-
0.5
-
-
165
-
-
25
-
-
14.7
-
-
8.9
-
37
-
127
-
-
70
-
-
-
-1
A
-0.86
-1.2
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=-10V, ID=-0.7A,
VGS=-4.5V (Note 1,2)
VDS=-10V, VGS=0V,
f=1.0MHZ
nC
pF
Switching
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
VDD=-10V, ID=-0.7A,
VGS=-4.5V, RG=6Ω
(Note 1,2)
tf
ns
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
IS
VSD
--IS=-1A, VGS=0V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
August 16,2013-REV.00
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PPJT7600
N-Channel TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Dlode Characterlslcs
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PPJT7600
N-Channel TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Capacitance vs. Drain-Source Voltage.
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PPJT7600
P-Channel TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Dlode Characterlslcs
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PPJT7600
P-Channel TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Threshold Voltage Variation with Temperature.
August 16,2013-REV.00
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PPJT7600
PART NO PACKING CODE VERSION
Part No Packing Code
Package Type
Packing type
Marking
Version
PJT7600_R1_00001
SOT-363
3K pcs / 7” reel
T60
Halogen free
PJT7600_R2_00001
SOT-363
10K pcs / 13” reel
T60
Halogen free
MOUNTING PAD LAYOUT
August 16,2013-REV.00
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PPJT7600
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August 16,2013-REV.00
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