NTZD3155C Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. Features http://onsemi.com •Leading Trench Technology for Low RDS(on) Performance •High Efficiency System Performance •Low Threshold Voltage •ESD Protected Gate •Small Footprint 1.6 x 1.6 mm •These are Pb-Free Devices V(BR)DSS 0.4 W @ 4.5 V N-Channel 20 V 0.5 W @ 2.5 V 0.7 W @ 1.8 V P-Channel -20 V •DC-DC Conversion Circuits •Load/Power Switching with Level Shift •Single or Dual Cell Li-Ion Battery Operated Systems •High Speed Circuits •Cell Phones, MP3s, Digital Cameras, and PDAs Symbol Value Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGS ±6 V P-Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C 540 TA = 85°C 390 tv5s TA = 25°C Steady State TA = 25°C TA = 85°C -310 tv5s TA = 25°C -455 Steady State N-Channel P-Channel 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View mA -430 MARKING DIAGRAM 6 1 SOT-563-6 CASE 463A TW MG G 250 TA = 25°C PD mW 280 tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 1500 IDM mA -750 TJ, TSTG -55 to 150 °C IS 350 mA 260 °C TL Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq [1 oz] including traces). © Semiconductor Components Industries, LLC, 2007 May, 2007 - Rev. 2 -430 mA S1 570 ID tv5s Pulsed Drain Current 0.6 W @ -2.5 V 1.0 W @ -1.8 V PINOUT: SOT-563 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) N-Channel Continuous Drain Current (Note 1) 540 mA 0.5 W @ -4.5 V Applications Parameter ID Max (Note 1) RDS(on) Typ 1 TW M G = Specific Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTZD3155CT1G SOT-563 (Pb-Free) 4000 / Tape & Reel NTZD3155CT2G SOT-563 (Pb-Free) 4000 / Tape & Reel NTZD3155CT5G SOT-563 (Pb-Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTZD3155C/D NTZD3155C Thermal Resistance Ratings Parameter Junction-to-Ambient – Steady State (Note 2) Symbol Max Unit RqJA 500 °C/W Junction-to-Ambient – t = 5 s (Note 2) 447 2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol N/P V(BR)DSS N Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage VGS = 0 V P Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ID = 250 mA 20 ID = -250 mA -20 V(BR)DSS/TJ IDSS IGSS V 18 N VGS = 0 V, VDS = 16 V P VGS = 0 V, VDS= -16 V N VGS = 0 V, VDS = 16 V P VGS = 0 V, VDS= - 16V TJ = 25°C 1.0 mA -1.0 TJ = 125°C 2.0 mA -5.0 VDS = 0 V, VGS = ±4.5 V P mV/°C $2.0 mA $5.0 N ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS N P Gate Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance ID = 250 mA 0.45 1.0 ID = -250 mA -0.45 -1.0 VGS(TH)/TJ RDS(on) gFS V -mV/ °C -1.9 N VGS = 4.5 V, ID = 540 mA 0.4 0.55 P VGS = -4.5V , ID = -430 mA 0.5 0.9 N VGS = 2.5 V, ID = 500 mA 0.5 0.7 P VGS = -2.5V , ID = -300 mA 0.6 1.2 N VGS = 1.8 V, ID = 350 mA 0.7 0.9 P VGS = -1.8V , ID = -150 mA 1.0 2.0 N VDS = 10 V, ID = 540 mA 1.0 P VDS = -10 V, ID = -430 mA 1.0 W S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS f = 1 MHz, VGS = 0 V VDS = 16 V 80 150 Output Capacitance COSS 13 25 Reverse Transfer Capacitance CRSS 10 20 Input Capacitance CISS 105 175 Output Capacitance COSS 15 30 Reverse Transfer Capacitance CRSS 10 20 N f = 1 MHz, VGS = 0 V VDS = -16 V P 3. Pulse Test: pulse width v300 ms, duty cycle v2% http://onsemi.com 2 pF NTZD3155C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol N/P Test Condition Min Typ Max 1.5 2.5 Unit CHARGES, CAPACITANCES AND GATE RESISTANCE Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) N 0.1 VGS = 4.5 V, VDS = -10 V; ID = 540 mA Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 0.35 Total Gate Charge QG(TOT) 1.7 Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD P VGS = -4.5 V, VDS = 10 V; ID = -380 mA 0.2 2.5 nC 0.1 0.3 0.4 SWITCHING CHARACTERISTICS (VGS = V) (Note 4) Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time td(ON) N tr 6.0 VGS = 4.5 V, VDD = -10 V, ID = 540 mA, RG = 10 W td(OFF) tf td(ON) 4.0 16 8.0 P tr VGS = -4.5 V, VDD = 10 V, ID = -215 mA, RG = 10 W td(OFF) ns 10 tf 12 35 19 Drain-Source Diode Characteristics Forward Diode Voltage VSD N P Reverse Recovery Time tRR N P VGS = 0 V, TJ = 25°C VGS = 0 V, dIS/dt = 100 A/ms 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 3 IS = 350 mA 0.7 1.2 IS = -350 mA -0.8 -1.2 IS = 350 mA 6.5 IS = -350 mA 13 V ns NTZD3155C N-CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1.2 1.8 5.5 V VGS = 1.6 V VGS = 2.0 V to 2.2 V 0.6 VGS = 1.4 V 0.4 0.2 VGS = 1.2 V 0 0 RDS(on), DRAIN-TO-SOURCE CURRENT RESISTANCE (W) ID, DRAIN CURRENT (A) 1.8 V 0.8 2 3 4 5 6 TJ = -55°C 1.4 TJ = 100°C 1.2 1.0 0.8 0.6 0.4 TJ = 25°C 0.2 VGS = 1.0 V 1 VDS w 10 V 1.6 7 8 9 0 0.5 10 1.5 2.0 2.5 VGS, GATE-T O-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 3.0 0.9 1.0 ID = 0.54 A TJ = 25°C 0.9 0.8 0.7 0.6 0.5 0.4 2 3 4 5 VGS, GATE-T O-SOURCE VOLTAGE (V) TJ = 25°C 0.8 VGS = 1.8 V 0.7 0.6 VGS = 2.5 V 0.5 VGS = 4.5 V 0.4 0.3 0.2 0.3 1 6 Figure 3. On-Resistance versus Gate-to-Source Voltage 0.4 1 1.2 1000 VGS = 0 V IDSS, LEAKAGE (nA) ID = 0.54 A VGS = 4.5 V 1.8 1.6 1.4 1.2 1 TJ = 150°C 100 TJ = 100°C 0.8 0.6 -50 0.6 0.8 ID, DRAIN CURRENT (A) Figure 4. On-Resistance versus Drain Current and Gate Voltage 2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 1.0 TJ = 25°C 10 -25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 4 20 NTZD3155C TJ = 25°C 150 VGS = 0 V 100 CISS 50 VDS = 0 V COSS 0 0 5 10 15 5 VDS 4 16 VGS 12 3 8 2 QGS QGD 1 0 20 4 ID = 0.54 A TJ = 25°C 0 0.2 VDS 0.4 0.6 0.8 1 1.2 1.4 0 1.6 Qg, TOTAL GATE CHARGE (nC) DRAIN-T O-SOURCE VOLTAGE (V) Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge Figure 7. Capacitance Variation 0.6 100 IS, SOURCE CURRENT (A) VDS = 10 V ID = 0.2 A VGS = 4.5 V t, TIME (ns) 20 QT VDS, DRAIN-TO-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 200 VGS, GATE-T O-SOURCE VOLTAGE (V) N-CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) td(OFF) 10 tf td(ON) tr 1 1 10 RG, GATE RESISTANCE (W) 100 0.5 VGS = 0 V TJ = 25°C 0.4 0.3 0.2 0.1 0 0.2 Figure 9. Resistive Switching Time Variation versus Gate Resistance 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 10. Diode Forward Voltage versus Current http://onsemi.com 5 1 NTZD3155C P-CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1 TJ = 25°C VGS = -2 V VDS ≥ -10 V -1.6 V 0.8 -I D, DRAIN CURRENT (A) -I D, DRAIN CURRENT (A) 1 VGS = -1.8 V 0.6 -1.4 V 0.4 -1.2 V 0.2 0.8 0.6 0.4 TJ = -55°C 0.2 -1 V 25°C 0 RDS(on), DRAIN-T O-SOURCE RESISTANCE (W) 2 3 5 4 6 7 8 9 10 -V DS, DRAIN-TO-SOURCE VOLTAGE (V) 0 0.5 1 1.5 2 -V GS, GATE-T O-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN-T O-SOURCE RESISTANCE (W) 1 0 0.8 ID = -0.43 A TJ = 25°C 0.75 0.7 0.65 0.6 0.55 0.5 0.45 0.4 1 3 5 4 -V GS, GATE-T O-SOURCE VOLTAGE (V) 2 6 2.5 1.4 TJ = 25°C 1.3 1.2 VGS = -1.8 V 1.1 1.0 0.9 0.8 0.7 VGS = -2.5 V 0.6 0.5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -I D, DRAIN CURRENT (A) Figure 4. On-Resistance vs. Drain Current and Gate Voltage Figure 3. On-Resistance vs. Gate-to-Source Voltage 10000 1.6 ID = -0.43 A VGS = -4.5 V VGS = 0 V 1.4 -I DSS, LEAKAGE (nA) RDS(on), DRAIN-T O-SOURCE RESISTANCE (NORMALIZED) 100°C 0 1.2 1 TJ = 150°C 1000 TJ = 100°C 100 0.8 0.6 -50 10 -25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 -V DS, DRAIN-TO-SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 6 20 NTZD3155C C, CAPACITANCE (pF) VGS = 0 V -V GS, GATE-T O-SOURCE VOLTAGE (V) 250 TJ = 25°C 200 CISS 150 100 COSS 50 CRSS 0 0 5 10 15 5 4 8 -V GS 7 6 3 5 4 2 QGD QGS 3 1 2 ID = -0.215 A TJ = 25°C 1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 QG, TOTAL GATE CHARGE (nC) DRAIN-T O-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 100 -I S, SOURCE CURRENT (AMPS) 0.6 td(OFF) t, TIME (ns) 9 -V DS 0 20 10 QT -V DS, DRAIN-T O-SOURCE VOLTAGE (VOLTS) P-CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) tf tr td(ON) 10 VDD = -10 V ID = -0.215 A VGS = -4.5 V 10 0.4 0.2 0 0.3 1 1 VGS = 0 V TJ = 25°C 100 0.4 0.5 0.6 0.7 0.8 0.9 -V SD, SOURCE-TO-DRAIN VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 7 NTZD3155C PACKAGE DIMENSIONS SOT-563, 6 LEAD CASE 463A-01 ISSUE F D -X- 5 6 1 2 A L 4 E -Y- 3 b e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b C D E e L HE HE C 5 PL 6 0.08 (0.003) M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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