VISHAY MBRF30H60CT-E3

MBR(F,B)30H35CT thru MBR(F,B)30H60CT
www.vishay.com
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
FEATURES
ITO-220AB
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
2
3
1
1
MBR30HxxCT
PIN 1
PIN 2
PIN 3
CASE
2
MBRF30HxxCT
PIN 1
PIN 2
TO-263AB
K
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
2
1
TYPICAL APPLICATIONS
MBRB30HxxCT
PIN 1
• High forward surge capability
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
PIN 3
PIN 2
3
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters or polarity protection application.
K
HEATSINK
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
2 x 15 A
VRRM
35 V to 60 V
IFSM
150 A
VF
0.56 V, 0.59 V
IR
80 μA, 60 μA
TJ max.
175 °C
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
VDC
35
45
50
60
V
Maximum DC blocking voltage
Maximum average forward rectified
current (Fig. 1)
total device
per diode
30
IF(AV)
A
15
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
Peak repetitive reverse surge current per diode
at tp = 2 μs, 1 kHz
IRRM
1.0
0.5
A
Peak non-repetitive reverse energy
(8/20 μs waveform)
ERSM
25
20
mJ
Revision: 24-Oct-12
150
A
Document Number: 88866
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR(F,B)30H35CT thru MBR(F,B)30H60CT
www.vishay.com
Vishay General Semiconductor
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT
UNIT
Non-repetitive avalanche energy per diode
at 25 °C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Electrostatic discharge capacitor voltage human
body model: C = 100 pF, R = 1.5 k
VC
25
kV
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
10 000
V/μs
TJ, TSTG
- 65 to + 175
°C
VAC
1500
V
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
per diode (1)
MBR30H35CT
MBR30H45CT
SYMBOL
MBR30H50CT
MBR30H60CT
UNIT
IF = 15 A
TC = 25 °C
-
0.62
-
IF = 15 A
TC = 125 °C
0.49
0.56
0.55
0.59
IF = 30 A
TC = 25 °C
-
0.73
-
0.83
IF = 30 A
TC = 125 °C
0.62
0.67
0.68
0.71
-
80
-
60
μA
5.0
15
4.0
15
mA
VF
TJ = 25 °C
Maximum reverse current per diode at
working peak reverse voltage (2)
IR
TJ = 125 °C
0.68
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
RJC
1.5
4.5
1.5
°C/W
Typical thermal resistance junction to
case per diode
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR30H45CT-E3/45
1.85
45
50/tube
Tube
ITO-220AB
MBRF30H45CT-E3/45
1.99
45
50/tube
Tube
TO-263AB
MBRB30H45CT-E3/45
1.35
45
50/tube
Tube
TO-263AB
MBRB30H45CT-E3/81
1.35
81
800/teel
Tape and reel
TO-220AB
MBR30H45CTHE3/45 (1)
1.85
45
50/tube
Tube
ITO-220AB
MBRF30H45CTHE3/45
(1)
1.99
45
50/tube
Tube
TO-263AB
MBRB30H45CTHE3/45 (1)
1.35
45
50/tube
Tube
TO-263AB
(1)
1.35
81
800/teel
Tape and reel
MBRB30H45CTHE3/81
Note
(1) AEC-Q101 qualified
Revision: 24-Oct-12
Document Number: 88866
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR(F,B)30H35CT thru MBR(F,B)30H60CT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
MBR, MBRB
30
MBRF
20
10
0
25
50
75
100
125
150
TJ = 150 °C
1
TJ = 125 °C
0.1
MBR30H35CT - MBR30H45CT
MBR30H50CT - MBR30H60CT
0.01
0.001
175
TJ = 25 °C
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
150
10 000
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
Junction Capacitance (pF)
125
100
75
50
25
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
MBR30H35CT - MBR30H45CT
MBR30H50CT - MBR30H60CT
0
100
10
1
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
10
TJ = 150 °C
10
TJ = 25 °C
1
TJ = 125 °C
0.1
MBR30H35CT - MBR30H45CT
MBR30H50CT - MBR30H60CT
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Transient Thermal Impedance (°C/W)
100
Instantaneous Forward Current (A)
10
0.0001
0
Peak Forward Surge Current (A)
Instantaneous Reverse Leakage
Current (mA)
Average Forward Current (A)
40
1
0.1
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 24-Oct-12
Document Number: 88866
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR(F,B)30H35CT thru MBR(F,B)30H60CT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
TO-220AB
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.671 (17.04)
0.651 (16.54)
PIN
2
3
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.191 (4.85)
0.171 (4.35)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
2
0.624 (15.85)
0.591 (15.00)
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
Revision: 24-Oct-12
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
K
0.105 (2.67)
0.095 (2.41)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
TO-263AB
K
7° REF.
7° REF.
0.022 (0.56)
0.014 (0.36)
1
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.411 (10.45)
0.380 (9.65)
7° REF.
0.076 (1.93) REF.
45° REF.
0.560 (14.22)
0.530 (13.46)
0.205 (5.20)
0.195 (4.95)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
1
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.190 (4.83)
0.170 (4.32)
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Document Number: 88866
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000