V40DL45BP Datasheet

V40DL45BP
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.26 V at IF = 5 A
TMBS ® eSMP® Series
SMPD
FEATURES
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
K
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
1
2
Top View
Bottom View
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
V40DL45BP
PIN 1
PIN 2
TYPICAL APPLICATIONS
K
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
HEATSINK
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(DC)
40 A
VRRM
45 V
IFSM
240 A
VF at IF = 40 A (TA = 125 °C)
0.53 V
TOP max. (AC model)
150 °C
TJ max. (DC forward current)
200 °C
Package
SMPD
Diode variations
Single die
Case: SMPD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked


MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40DL45BP
UNIT
VRRM
45
V
IF(DC) (1)
40
A
IFSM
240
A
Operating junction temperature range (AC model)
TOP
-40 to +150
°C
Junction temperature in DC forward current without reverse bias, t =  1 h
TJ (2)
 200
°C
Maximum repetitive peak reverse voltage
Maximum DC forward current (fig. 1)
Peak forward surge current 10 ms single half sine-wave superimposed on
rated load
Note
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed.2 bypass diode thermal test
Revision: 18-Mar-14
Document Number: 87789
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40DL45BP
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 20 A
TA = 25 °C
IF = 40 A
Instantaneous forward voltage
VF (1)
IF = 5 A
IF = 20 A
TA = 125 °C
IF = 40 A
VR = 45 V
Reverse current
TA = 25 °C
IR (2)
TA = 125 °C
TYP.
MAX.
0.38
-
0.47
-
0.58
0.66
0.26
-
0.38
-
0.53
0.61
-
5
36
125
UNIT
V
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  5 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
V40DL45BP
RJC
0.9
RJA
(1)(2)
UNIT
°C/W
45
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
JA
(2) Free air, without heatsink
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT
(g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMPD
V40DL45BP-M3/I
0.55
I
2000/reel
13" diameter plastic tape and reel

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
45
DC Forward Current (A)
Average Power Loss (W)
RthJA=RthJC=0.9oC/W
40
35
30
25
20
15
RthJA=45oC/W
10
5
0
0
25
50
75
100
125
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Revision: 18-Mar-14
150
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
D = 0.8
D = 0.5
D = 1.0
D = 0.3
D = 0.2
T
D = 0.1
D = tp/T
0
5
10
15
20
25
30
35
tp
40
45
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Document Number: 87789
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40DL45BP
www.vishay.com
Instantaneous Forward Current (A)
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Transient Thermal Impedance (°C/W)
Vishay General Semiconductor
100
Junction to Ambient
10
1
0.1
0.01
0.1
Instantaneous Forward Voltage (V)
10
100
Fig. 6 - Typical Transient Thermal Impedance
Fig. 3 - Typical Instantaneous Forward Characteristics
50
1000
Thermal Resistance (°C/W)
Instantaneous Reverse Current (mA)
1
t - Pulse Duration (s)
TA = 150 °C
100
TA = 125 °C
TA = 100 °C
10
1
0.1
TA = 25 °C
Epoxy printed circiut
board FR4 copper
thickness = 70 μm
45
40
35
30
25
S(cm 2)
20
0.01
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
1
2
3
4
5
6
7
8
9
Copper Pad Areas (cm 2)
Fig. 7 - Thermal Resistance Junction-to-Ambient vs.
Copper Pad Areas
Fig. 4 - Typical Reverse Characteristics
Junction Capacitance (pF)
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Revision: 18-Mar-14
Document Number: 87789
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40DL45BP
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPD
5()
WR WR 120
Mounting Pad Layout
0,1
5()
120
5()
0,1
Revision: 18-Mar-14
Document Number: 87789
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000