RLT7605MG TECHNICAL DATA Infrared Laserdiode Structure: index guided single transverse mode Lasing wavelength: 760 nm typ. Output power: 5 mW cw Package: 5.6 mm, TO-18 NOTE! LASERDIODE MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Maximum Ratings (Tc = 25°C) CHARACTERISTIC SYMBOL Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operation Case Temperature TC Storage Temperature TSTG RATING 5 2 30 -10 .. +50 -40 .. +85 Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Threshold Current Ith cw Operation Current Iop Po = 5 mW Operating Voltage Vop Po = 5 mW Lasing Wavelength Po = 5 mW λp Spectral Width Po = 5 mW Δλ P Beam Divergence θ// o = 5 mW Beam Divergence Po = 5 mW θ⊥ Slope Efficiency cw η Monitor Current Im Po = 5 mW 10.08.2010 rlt7605mg.doc MIN 1.8 750 0.2 7 30 0.5 250 UNIT mW V V °C °C TYP 15 25 1.9 760 0.4 10 33 0.65 400 MAX 20 40 2.0 766 1.1 12 38 1 800 UNIT mA mA V nm nm ° ° mW/mA µA 1 of 1