a FEATURES Low Supply Current: 5.5 mA max Single-Supply Operation: 2.2 V to 12 V Wide Bandwidth: 160 kHz Wide Input Voltage Range Rail-to-Rail Output Swing No Phase Reversal Output Short Circuit Current: 610 mA 5 mA, Rail-to-Rail Output Operational Amplifier OP186 FUNCTIONAL BLOCK DIAGRAM 5-Lead SOT-23 (RT Suffix) OUT 1 V+ 2 5 V– OP186 TOP VIEW +IN 3 (Not to Scale) 4 –IN APPLICATIONS Portable Phones Comparator Battery Powered Instrumentation Safety Monitoring Remote Sensors Low Voltage Strain Gauge Amplifiers GENERAL DESCRIPTION The OP186 is a single, low voltage, ultralow power singlesupply, amplifier featuring rail-to-rail outputs. Specifications are guaranteed at +2.2 V, +2.7 V, and +5.0 V single supply as well as ± 5 V dual supplies. Fabricated on Analog Device’s CBCMOS process, the OP186 features a bipolar input and an output that swings to within millivolts of the supplies while continuing to sink or source current all the way to the supplies. Applications for these amplifiers include safety monitoring, portable equipment, battery and power supply control, and as signal conditioning and interface for transducers in very low power systems. The output’s ability to swing rail-to-rail and not increase supply current when the output is driven to a supply enables the OP186 to be used as a comparator in very low power systems. The OP186 is specified over the extended industrial (–40°C to +125°C) temperature range. The OP186 is available in the SOT-23-5 package. REV. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1998 OP186–SPECIFICATIONS ELECTRICAL CHARACTERISTICS (V S Parameter Symbol INPUT CHARACTERISTICS␣ Offset Voltage VOS1 Input Bias Current IB Input Offset Current IOS Input Voltage Range Common-Mode Rejection Ratio VCM CMRR Large Signal Voltage Gain AVO Offset Voltage Drift Bias Current Drift Offset Current Drift ∆VOS /∆T ∆IB /∆T ∆IOS /∆T OUTPUT CHARACTERISTICS Output Voltage High VOH Output Voltage Low VOL Short Circuit Limit ISC POWER SUPPLY␣ Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE␣ Slew Rate Turn-On Time Gain Bandwidth Product Phase Margin NOISE PERFORMANCE␣ Voltage Noise Density Current Noise Density PSRR ISY SR = +2.2 V, VCM = +1.1 V, TA = +258C unless otherwise noted) Conditions 0°C ≤ TA ≤ +125°C Max Units 0.8 5 6 7 10 2 5 1.2 mV mV nA nA nA nA V dB dB V/mV V/mV µV/°C pA/°C pA/°C 0.1 0°C ≤ T A ≤ +125°C V CM = 0 V to 1.2 V 0°C ≤ T A ≤ +125°C RL = 1 MΩ , VO = 0.3 V to 1.9 V 0°C ≤ TA ≤ +125°C Typ 3 0°C ≤ T A ≤ +125°C 0 65 60 5 2 90 18 3.5 30 3 RL = 100 kΩ to GND 0°C to +125°C RL = 100 kΩ to V+ 0°C to +125°C 2.125 2.1 VS = 2.2 V to 12 V 0°C ≤ T A ≤ +125°C 78 76 0°C ≤ TA ≤ +125°C 2.16 25 ± 500 60 75 95 4 5 5.5 V V mV mV µA dB dB µA µA RL = 100 kΩ, CL = 15 pF AV = 1, VO = 1 AV = 20, VO = 1 60 17 35 150 60 V/ms µs µs kHz Degrees f = 1 kHz 80 <1 nV/√Hz pA/√Hz GBP Φo en in Min NOTE 1 VOS is tested under a no load condition. Specifications subject to change without notice. –2– REV. 0 OP186 ELECTRICAL CHARACTERISTICS (V S Parameter Symbol INPUT CHARACTERISTICS␣ Offset Voltage VOS2 = +2.7 V, VCM = +1.35 V, TA = +258C unless otherwise noted)1 Input Bias Current IB Input Offset Current IOS Input Voltage Range Common-Mode Rejection Ratio VCM CMRR Large Signal Voltage Gain AVO Offset Voltage Drift Bias Current Drift Offset Current Drift ∆VOS /∆T ∆IB/∆T ∆IOS /∆T OUTPUT CHARACTERISTICS Output Voltage High VOH Output Voltage Low VOL Short Circuit Limit ISC POWER SUPPLY␣ Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE␣ Slew Rate Turn-On Time Gain Bandwidth Product Phase Margin NOISE PERFORMANCE␣ Voltage Noise Density Current Noise Density PSRR ISY SR Conditions –40°C ≤ TA ≤ +125°C Units 0.6 5 6 7 10 2 5 1.7 mV mV nA nA nA nA V dB dB V/mV V/mV µV/°C pA/°C pA/°C 0 65 60 5 2 90 22 3.5 30 3 RL = 100 kΩ to GND –40°C to +125°C RL = 100 kΩ to V+ –40°C to +125°C 2.625 2.6 VS = 2.7 V to 12 V –40°C ≤ TA ≤ +125°C 78 76 –40°C ≤ TA ≤ +125°C 2.665 22 ± 0.8 50 75 95 4.2 5.5 7 V V mV mV mA dB dB µA µA RL =100 kΩ, CL = 15 pF AV = 1, VO = 1 AV = 20, VO = 1 61 17 25 155 59 V/ms µs µs kHz Degrees f = 1 kHz 80 <1 nV/√Hz pA/√Hz NOTES 1 +2.7 V specifications are guaranteed by +2.2 V and ±5 V testing. 2 VOS is tested under a no load condition. Specifications subject to change without notice. REV. 0 Max 0.1 –40°C ≤ TA ≤ +125°C V CM = 0 V to 1.7 V –40°C ≤ TA ≤ +125°C RL = 1 MΩ, VO = 0.3 V to 2.4 V –40°C ≤ TA ≤ +125°C Typ 3 –40°C ≤ TA ≤ +125°C GBP Φo en in Min –3– OP186–SPECIFICATIONS ELECTRICAL CHARACTERISTICS (V Parameter S = +5.0 V, VCM = +2.5 V, TA = +258C unless otherwise noted)1 Symbol Conditions Min Typ Max Units 0.6 5 6 7 10 2 5 4 mV mV nA nA nA nA V dB dB V/mV V/mV µV/°C pA/°C pA/°C INPUT CHARACTERISTICS␣ Offset Voltage VOS2 Input Bias Current IB Input Offset Current IOS Input Voltage Range Common-Mode Rejection Ratio VCM CMRR Large Signal Voltage Gain AVO Offset Voltage Drift Bias Current Drift Offset Current Drift ∆VOS/∆T ∆IB/∆T ∆IOS/∆T OUTPUT CHARACTERISTICS Output Voltage High VOH Output Voltage Low VOL Short Circuit Limit ISC POWER SUPPLY␣ Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE␣ Slew Rate Gain Bandwidth Product Phase Margin Saturation Recovery Time NOISE PERFORMANCE␣ Voltage Noise Voltage Noise Density Current Noise Density PSRR ISY –40°C ≤ TA ≤ +125°C 3 –40°C ≤ TA ≤ +125°C 0.1 –40°C ≤ TA ≤ +125°C V CM = 0 V to 4.0 V –40°C ≤ TA ≤ +125°C RL = 1 MΩ, VO = 0.5 V to 4.5 V –40°C ≤ TA ≤ +125°C –40°C ≤ TA ≤ +125°C 0 65 60 5 2 40 3.3 25 3 RL = 100 kΩ to GND –40°C ≤ TA ≤ +125°C RL = 100 kΩ to V+ –40°C ≤ TA ≤ +125°C 4.925 4.9 VS = 2.7 V to 12 V –40°C ≤ TA ≤ +125°C 78 76 –40°C ≤ TA ≤ +125°C 90 4.965 20 ± 3.5 50 75 95 4.7 6 7.5 V V mV mV mA dB dB µA µA SR GBP Φo RL = 100 kΩ, CL = 15 pF 62 155 59 60 V/ms kHz Degrees µs en p-p en 0.1 Hz to 10 Hz f = 1 kHz f = 10 kHz 6 80 70 <1 µV p-p nV/√Hz nV/√Hz pA/√Hz in NOTES 1 +5 V specifications are guaranteed by +2.2 V and ± 5 V testing. 2 VOS is tested under a no load condition. Specifications subject to change without notice. –4– REV. 0 OP186 ELECTRICAL CHARACTERISTICS (V S Parameter Symbol INPUT CHARACTERISTICS␣ Offset Voltage VOS1 = 65.0 V, TA = +258C unless otherwise noted) Input Bias Current IB Input Offset Current IOS Input Voltage Range Common-Mode Rejection VCM CMRR Large Signal Voltage Gain AVO Offset Voltage Drift Bias Current Drift Offset Current Drift ∆VOS /∆T ∆IB /∆T ∆IOS /∆T OUTPUT CHARACTERISTICS␣ Output Voltage Swing Short Circuit Limit POWER SUPPLY␣ Power Supply Rejection Ratio Supply Current/Amplifier VO Conditions Min –40°C ≤ TA ≤ +125°C ISY Units 0.6 5 6 7 10 2 5 +4 mV mV nA nA nA nA V dB dB V/mV V/mV µV/°C pA/°C pA/°C 0.1 –40°C ≤ TA ≤ +125°C –5 65 60 50 10 90 250 3 25 3 RL = 100 kΩ to GND –40°C to +125°C ± 4.95 ± 4.90 VS = ± 1.35 V to ± 6 V –40°C ≤ TA ≤ +125°C VO = 0 V –40°C ≤ TA ≤ +125°C 78 76 ISC PSRR Max 3 –40°C ≤ TA ≤ +125°C V CM = –5.0 V to +4.0 V –40°C ≤ TA ≤ +125°C RL = 1 MΩ, VO = ± 4.0 V, –40°C ≤ TA ≤ +125°C Typ ± 4.98 V V mA ± 10 95 5.2 7 8 dB dB µA µA DYNAMIC PERFORMANCE␣ Slew Rate Gain Bandwidth Product Phase Margin ± SR GBP Φo RL = 100 kΩ, CL = 15 pF 62 170 58 V/ms kHz Degrees NOISE PERFORMANCE␣ Voltage Noise Voltage Noise Density en p-p en 0.1 Hz to 10 Hz f = 1 kHz f = 10 kHz 6 80 70 <1 µV p-p nV/√Hz nV/√Hz pA/√Hz Current Noise Density in NOTE 1 VOS is tested under a no load condition. Specifications subject to change without notice. REV. 0 –5– OP186 ABSOLUTE MAXIMUM RATINGS 1 Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +16 V Input Voltage . . . . . . . . .2. . . . . . . . . . . . . . GND to VS + 10 V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ± 3.5 V Output Short-Circuit Duration to GND . . . . . . . . . Indefinite Storage Temperature Range RT Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C Operating Temperature Range OP186G . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +125°C Junction Temperature Range RT Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C Lead Temperature Range (Soldering, 60 sec) . . . . . . . +300°C Package Type uJA1 uJC Units 5-Lead SOT-23 (RT) 230 140 °C/W NOTE 1 θ JA is specified for worst case conditions, i.e., θ JA is specified for device in socket for SOT packages. ORDERING GUIDE Model Temperature Range Package Description Package Option OP186GRT –40°C to +125°C 5-Lead SOT-23 RT-5 NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 For supplies less than ± 5 V the differential input voltage is limited to the supplies. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP186 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. –6– WARNING! ESD SENSITIVE DEVICE REV. 0 Typical Performance Characteristics–OP186 45 35 30 30 20 25 20 30 25 20 15 15 10 10 5 5 5 0 0 22 21.5 21 20.5 0 0.5 1 1.5 INPUT OFFSET VOLTAGE – mV 2 Figure 1. Input Offset Voltage Distribution 0 2 25 20 15 10 VS = +2.2V 250 200 150 VS = 65V 100 VS = +2.7V 50 0 INPUT BIAS CURRENT – nA 30 22 21.5 21 20.5 0 0.5 1 1.5 INPUT OFFSET VOLTAGE – mV 2 Figure 4. Input Offset Voltage Distribution 2100 240 220 24 VS = 65.5V 26 27 240 220 0 Figure 7. Input Bias Current vs. Temperature REV. 0 0 20.5 21.0 21.5 22.0 22.5 23.0 23.5 20 40 60 80 100 120 140 TEMPERATURE – 8C 24.0 24 25 VS = 65V 20 40 60 80 100 120 140 TEMPERATURE – 8C Figure 6. Input Bias Current vs. Temperature INPUT OFFSET CURRENT – nA 23 INPUT BIAS CURRENT – nA VS = +2.7V VS = +2.2V 23 0.4 VS = +5V TA = +258C 0.5 22 22 27 240 220 0 20 40 60 80 100 120 140 TEMPERATURE – 8C 1.0 21 25 0 Figure 5. Input Offset Voltage vs. Temperature 0 21 26 250 5 2 0 300 INPUT OFFSET VOLTAGE – mV 35 22 21.5 21 20.5 0 0.5 1 1.5 INPUT OFFSET VOLTAGE – mV Figure 3. Input Offset Voltage Distribution 350 VS = 65V TA = +258C 40 0 22 21.5 21 20.5 0 0.5 1 1.5 INPUT OFFSET VOLTAGE – mV Figure 2. Input Offset Voltage Distribution 45 QUANTITY – A 35 10 15 VS = +5V TA = +258C 40 QUANTITY – A 35 25 VS = +2.7V TA = +258C 40 QUANTITY – A QUANTITY – A 40 INPUT BIAS CURRENT – nA 45 45 VS = +2.2V TA = +258C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 COMMON-MODE VOLTAGE – Volts Figure 8. Input Bias Current vs. Common-Mode Voltage –7– 0.3 VS = +2.7V, +5V 0.2 0.1 0 –0.1 –0.2 –0.3 –40 –20 0 20 40 60 80 100 120 140 TEMPERATURE – 8C Figure 9. Input Offset Current vs. Temperature OP186 1k SOURCE SINK 10 1 1 10 100 LOAD CURRENT – mA 100 SOURCE 1 0.1 1 100 SOURCE SINK 10 1 0.1 1000 45 20 90 PHASE 10 135 0 180 210 225 220 270 1k 10k 100k FREQUENCY – Hz 0 30 45 20 90 Figure 13. Open-Loop Gain and Phase vs. Frequency 50 PHASE 10 135 0 180 –10 225 –20 270 –30 100 1M 50 40 1k 10k 100k FREQUENCY – Hz 1M +2.7V # VS # +5V 30 VS = 65V TA = +258C RL = 100kV 40 0 30 45 90 PHASE 10 135 0 180 –10 225 –20 270 –30 100 1k 1M 10k 100k FREQUENCY – Hz Figure 15. Open-Loop Gain and Phase vs. Frequency 120 120 +2.7V # VS # +5V TA = +258C 100 RL = 1000 20 Figure 14. Open-Loop Gain and Phase vs. Frequency VS = +5V TA = +258C 40 GAIN TA = +258C RL = ` 100 80 CMRR – dB 20 10 0 PSRR – dB 100 60 OPEN-LOOP GAIN – dB 30 GAIN VS = +5V TA = +258C RL = 100kV PHASE SHIFT – Degrees 50 0 OPEN-LOOP GAIN – dB GAIN 40 10 100 LOAD CURRENT – mA 70 60 PHASE SHIFT – Degrees 50 VS = +2.2V TA = +258C RL = 100kV 1 Figure 12. Output Voltage to Supply Rail vs. Load Current 70 60 OPEN-LOOP GAIN – dB 10 100 LOAD CURRENT – mA Figure 11. Output Voltage to Supply Rail vs. Load Current 70 CLOSED-LOOP GAIN – dB SINK 10 1000 Figure 10. Output Voltage to Supply Rail vs. Load Current 230 VS = 65V TA = +258C OUTPUT VOLTAGE – mV OUTPUT VOLTAGE – mV OUTPUT VOLTAGE – mV 100 0.1 1k VS = +5V TA = +258C VS = +2.7V TA = +258C 80 60 60 40 –10 40 20 –20 –30 10 100 1k 10k 100k FREQUENCY – Hz 1M Figure 16. Closed-Loop Gain vs. Frequency 20 1k 10k 1M 100k FREQUENCY – HZ 10M Figure 17. CMRR vs. Frequency –8– 0 10 100 1k 10k 100k FREQUENCY – Hz 1M Figure 18. PSRR vs. Frequency REV. 0 PHASE SHIFT – Degrees 1k OP186 65 50 45 +OS 40 2OS 35 30 25 20 15 10 5 MAXIMUM OUTPUT SWING – V p-p 55 3 VS = +5V VIN = 100mV p-p AVCL = +1 RL = 100kV TA = +258C MAXIMUM OUTPUT SWING – V p-p SMALL SIGNAL OVERSHOOT – % 60 2 1 VS = +2.7V VIN = 2V p-p AVCL = +1 RL = TA = +258C 4 VS = +5V VIN = 4V p-p AVCL = +1 RL = TA = +258C 3 2 1 5 0 10 100 CAPACITANCE – pF 0 10 1000 Figure 19. Small Signal Overshoot vs. Load Capacitance 0 10 100k 6 VS = +5V 4.5 4 VS = +2.2V 0 20 40 60 80 100 120 140 TEMPERATURE – 8C Figure 22. Bias Current vs. Temperature 500mV 4 3.5 3 2.5 2 1.5 VS = +2.7V AV = +1 RL = 100kV CL = 50pF TA = +258C 100ms Figure 25. Large Signal Transient Response 0 4 3.75 3.5 3.25 3 2.75 2.5 VS = +5V RL = TA = +258C 2.25 0.5 VS = +2.7V 3 –40 –20 4.5 1 3.5 100k 4.25 SUPPLY CURRENT – mA SUPPLY CURRENT – mA VS = 65V 65V V S= 5 1k 10k FREQUENCY – Hz 4.5 TA = +258C 5 5.5 100 Figure 21. Maximum Output Swing vs. Frequency 6 5.5 INPUT BIAS CURRENT – nA 1k 10k FREQUENCY – Hz Figure 20. Maximum Output Swing vs. Frequency 6.5 REV. 0 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 SUPPLY VOLTAGE – 6V 2 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 COMMON MODE VOLTAGE – V Figure 23. Supply Current vs. Supply Voltage Figure 24. Supply Current vs. Common-Mode Voltage VS = +5V AV = +1 RL = 100kV CL = 50pF TA = +258C VS = 61.35V AV = +1 RL = 100kV CL = 50pF TA = +258C 1.0V 100ms Figure 26. Large Signal Transient Response –9– 50mV 100ms Figure 27. Small Signal Transient Response OP186 VS = +5V TA = +258C 50mV VS = 62.5V AV = +1 RL = 100kV CL = 50pF TA = +258C VS = 61.35V AVOL = CIRCUIT VIN = 61V p-p RL = TA = +258C 100ms Figure 28. Small Signal Transient Response 1.0V 200ms 1.0V Figure 29. No Phase Reversal 500mV 100ms Figure 30. Saturation Recovery Time 100ms VS = –2.5V A VOL = CIRCUIT VIN = –1V p-p RL = TA = +258C Figure 31. Saturation Recovery Time APPLICATIONS The OP186 is very similar in design to the OP181. Please see the OP181/OP281/OP481 data sheet for applications information. Design of the OP186 was based on the OP181. The major difference is that the trim structures have been removed. This results in the offset of the OP186 being higher than the OP181. There are no other major changes to the circuit. Other performance differences, such as the higher bandwidth and slightly higher supply current, also result from the removal of the trim resistors. –10– REV. 0 OP186 SPICE MODEL * OP186 SPICE Macro-model Typical Values * 2/98, Ver. 1 * TAM / ADSC * * Copyright 1998 by Analog Devices * * Refer to “README.DOC” file for License State* ment. Use of this * model indicates your acceptance of the terms * and provisions in * the License Statement. * * Node Assignments * noninverting input * | inverting input * | | positive supply * | | | negative supply * | | | | output * | | | | | * | | | | | .SUBCKT OP186 1 2 99 50 45 * * INPUT STAGE * Q1 4 1 3 PIX Q2 6 7 5 PIX RC1 4 50 100E3 RC2 6 50 100E3 RE1 3 8 6.452E3 RE2 5 8 6.452E3 C1 4 6 50E-15 I1 99 8 1E-6 EOS 7 2 POLY(2) (12,98) (73,98) 800E-6 1 1 IOS 1 2 50E-12 V1 99 9 0.9 V2 99 10 0.9 D1 3 9 DX D2 5 10 DX * * CMRR 90dB, ZERO AT 1kHz * ECM1 11 98 POLY(2) (1,98) (2,98) 0 .5 .5 RCM1 11 12 1.59E6 CCM1 11 12 100E-12 RCM2 12 98 50 * * PSRR=100dB, ZERO AT 200Hz * REV. 0 RPS1 70 0 1E6 RPS2 71 0 1E6 CPS1 99 70 1E-5 CPS2 50 71 1E-5 EPSY 98 72 POLY(2) (70,0) (0,71) 0 1 1 RPS3 72 73 1.59E6 CPS3 72 73 500E-12 RPS4 73 98 15.9 * * INTERNAL VOLTAGE REFERENCE * EREF 98 0 POLY(2) (99,0) (50,0) 0 .5 .5 GSY 99 50 POLY(1) (99,50) 2E-6 .1E-6 * * POLE AT 600kHz; ZERO AT 900kHz * G1 98 20 (4,6) 11.3E-6 R1 20 98 88.46E3 R2 20 21 176.8E3 C2 21 98 1E-12 * * GAIN STAGE * G4 98 30 (20,98) 19.54E-6 R7 30 98 111.6E6 CF 45 30 32E-12 D3 30 31 DX D4 32 30 DX V3 99 31 0.6 V4 32 50 0.6 * * OUTPUT STAGE * M1 45 46 99 99 POX L=2u W=100u M2 45 47 50 50 NOX L=2u W=98u EG1 99 46 POLY(1) (98,30) 0.82 1 EG2 47 50 POLY(1) (30,98) 0.79 1 * * MODELS * .MODEL POX PMOS (LEVEL=2, KP=10E-6, + VTO=-0.75, LAMBDA=0.01) .MODEL NOX NMOS (LEVEL=2, KP=17E-6, + VTO=0.75, LAMBDA=0.01) .MODEL PIX PNP (BF=185,KF=1.6E-12,AF=1) .MODEL DX D(IS=1E-14) .ENDS OP186 –11– OP186 OUTLINE DIMENSIONS Dimensions shown in inches and (mm). C3330–8–4/98 5-Lead SOT-23 (RT Suffix) 0.1181 (3.00) 0.1102 (2.80) 0.0669 (1.70) 0.0590 (1.50) 5 1 4 2 0.1181 (3.00) 0.1024 (2.60) 3 PIN 1 0.0374 (0.95) BSC 0.0748 (1.90) BSC 0.0512 (1.30) 0.0354 (0.90) 0.0197 (0.50) 0.0138 (0.35) SEATING PLANE 108 08 0.0217 (0.55) 0.0138 (0.35) PRINTED IN U.S.A. 0.0059 (0.15) 0.0019 (0.05) 0.0079 (0.20) 0.0031 (0.08) 0.0571 (1.45) 0.0374 (0.95) –12– REV. 0