XC2407A816UR-G ETR2705-002a 1.6GHz ON/OFF Function LNA ■GENERAL DESCRIPTION The XC2407A816UR-G is an ultra-low-noise amplifier (LNA) with low operating voltage, low noise figure (NF), low power consumption using CMOS process, The XC2407 is designed for GPS band frequency (1.6GHz). The IC's internal circuit can be placed in stand-by mode via the CE function, In the stand-by mode, consumption current is greatly reduced and there is no need to add external ON/OFF control function like LDO. External RBIAS can adjust power supply to any voltage of 1.71V~3.63V as self bias function. Standard power supply voltages are 3.45V, 3.00V, 2.85V and 1.80V. . ■APPLICATIONS ●GPS band RF signal amplified ■FEATURES Noise Figure Low Power Consumption High Gain CE Function : : : : Operation Voltage Range Output : : Operating Temperature Range Package Environmentally Friendly : : : NF=0.96dB (TYP.) (@1.575GHz) 7.02mW (TYP.) (VDD=1.80V, RBIAS=430Ω) S21=15dB (TYP.) (@1.575GHz) CE “H” 1.1V～VDD (1.71V≦VDD≦3.15V) CE ”L” 0V～0.4V 1.71V～3.63V CMOS Output 50Ω Driver Built-in - 40℃～+ 85℃ USP-8A01 EU RoHS Compliant, Pb Free ■TYPICAL APPLICATION CIRCUIT ■TYPICAL PERFORMANCE CHARACTERISTICS Power Gain / Noise Figure vs. Frequency X C2 4 0 7 A8 1 6 VDD [V] (TYP.) RBIAS [Ω] 3.45 3.00 2.85 1.80 620 470 430 150 V DD=V CE=2.85V, Ta=25℃ 3.0 15 2.5 14 2.0 13 1.5 12 1.0 11 0.5 10 Noise Figure : NF (dB) TOP VIEW Power Gain : S21 (dB) 16 0.0 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 Frequency : f (GHz) * RBIAS should be used in ±1% tolerance and ±200ppm/℃ temperature stability. 1/18 XC2407A816UR-G ■BLOCK DIAGRAM * Diodes inside the circuit are an ESD protection diode. ■PRODUCT CLASSIFICATION ●Ordering Information PRODUCT NAME XC2407A816UR-G (*1) (*1) PACKAGE ORDER UNIT USP-8A01 3,000 / Reel The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant. 2/18 XC2407A816UR-G ■PIN CONFIGURATION USP-8A01 （BOTTOM VIEW） ■PIN ASSIGNMENT PIN NUMBER PIN NAME FUNCTION 1 RF_IN RF Signal Input 2 VSS1 Ground 3 VSS2 Ground 4 CE ON/OFF Control Pin 5 RF_OUT RF Signal Output 6 VDD Power Supply 7 RBIAS1 RBIAS Connect Pin 8 RBIAS2 RBIAS Connect Pin ■FUNCTION CHART PIN NAME CE SIGNAL STATUS CE High Active CE Low Stand-by CE OPEN Undefined State 3/18 XC2407A816UR-G ■ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER SYMBOL RATINGS UNITS Power Supply Voltage CE Input Voltage Current Circuit RBIAS1 Input Voltage RBIAS2 Input Voltage RF Input Power RF_IN Input Voltege RF_OUT Input Voltege Power Dissipation Operating Ambient Temperature Storage Temperature VDD VCE IDD RBIAS1 RBIAS2 PIN VRF_IN VRF_OUT Pd Topr Tstg -0.3∼4.0 (*1) -0.3∼VDD+0.3 or 4.0 42 (*1) -0.3∼VDD+0.3 or 4.0 -0.3∼+1.6 10 (*2) -0.3∼RBIAS2+0.3 or +1.6 (*3) 0∼RBIAS2 or +1.6 120 -40∼+85 -55∼+125 V V mA V V dBm V V mW ℃ ℃ * All voltages are described based on the VSS1 and VSS2 pin. VSS1 pin and VSS2 pin should be connected each other outside. (*1) The maximum value should be either VDD+0.3V or +4.00V in the lowest. (*2) The maximum value should be either RBIAS2+0.3V or +1.60V in the lowest. (*3) The maximum value should be either RBIAS2 or +1.60V in the lowest. 4/18 XC2407A816UR-G ■ELECTRICAL CHARACTERISTICS ●DC Characteristics PARAMETER Power Supply Voltage Ta=25℃ SYMBOL VDD Current Circuit IDD Stand-by Current ISTBY CE "H" Level Voltage VCEH CE "L" Level Voltage VCEL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT RBIAS=620Ω (*2) 3.278 3.450 3.630 V ① RBIAS=470Ω (*2) 2.850 3.000 3.150 V ① RBIAS=430Ω (*2) 2.708 2.850 2.992 V ① RBIAS=150Ω (*2) 1.710 1.800 1.890 V ① - 3.9 7.5 mA ① - - 0.1 μA ① 1.71V≦VDD≦3.15V 1.1 - VDD V ① 3.15V<VDD≦3.63V 1.3 - VDD V ① - 0 - 0.4 V ① 1.71V≦VDD≦3.63V (*1) VCE=VDD 1.71V≦VDD≦3.63V (*1) VCE=0V (*1) For the relation of VDD and RBIAS, Please refer to the “Power Supply Voltage vs. RBIAS Table” below. (*2) RBIAS should be used in ±1% tolerance and ±200ppm/℃ temperature stability. ●AC Characteristics PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT Power Gain S21 f=1.575GHz 13.5 15.0 - dB ② Input Return Loss S11 f=1.575GHz - 9.5 - dB ② Output Return Loss S22 f=1.575GHz - 9.5 - dB ② Isolation S12 f=1.575GHz - -20 - dB ② (*1) NF f=1.575GHz - 0.96 - dB ③ Input Power IP3 IIP3 f=1.575GHz, 1.576GHz - -5.1 - dBm ④ Input Power IP2 IIP２ f=0.8GHz, 2.375GHz - 10.3 - dBm ④ Input Power @ 1dB Gain Conpression P1dB f=1.575GHz - -19 - dBm ② Noise Figure (*1) VDD=VCE=2.85V, RBIAS=430Ω, Ta=25℃ NF is the value excluding the substrate loss. Power Supply Voltage vs. RBIAS VDD [V] RBIAS [Ω] 3.278～3.630 620 2.850～3.150 470 2.708～2.992 430 1.710～1.890 150 5/18 XC2407A816UR-G ■NOTE ON USE 1. For temporary, transitional voltage drop or voltage rising phenomenon, the IC is liable to malfunction should the ratings be exceeded. 2. Please eliminate static electricity from the operational table, people, and soldering iron. 3. Please use noiseless power supply for stable operation. 4. Please connect CBIAS to RBIAS2 pin as close as possible. 5. VSS1 pin and VSS2 pin should be connected each other outside. 6. Please ensure to use an external component which does not depend on bias or temperature too much. 7. Torex places an importance on improving our products and their reliability. We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in their systems. 6/18 XC2407A816UR-G ■TEST CIRCUITS ●Circuit ① (DC Characteristics: Power Supply Pin Voltage, Circuit Current, Stand-by Current) RBIAS RBIAS2 PIN RF_IN RBIAS1 VSS1 VDD VSS2 RF_OUT CE CBIAS A POUT V VDD VCE * PIN / POUT is 50Ω ●Circuit ② (Power Gain, Input Return Loss, Output Return Loss, Isolation, Input Power @ 1dB Gain Compression) (*1) Refer to the circuit ⑤ for the block detail. ●Circuit ③ (Noise Figure) (*1) Refer to the circuit ⑤ for the block detail. 7/18 XC2407A816UR-G ■TEST CIRCUITS (Continued) ●Circuit ④ (Input Power IP3, Input Power IP2) (*1) Refer to the circuit ⑤ for the block detail. ●Circuit ⑤ (XC2407 series, the circuit of the block) VDD (V) (TYP.) RBIAS (Ω) 3.45 3.00 2.85 1.80 620 470 430 150 * RBIAS should be used in ±1% tolerance and ±200ppm/℃ temperature stability. 8/18 XC2407A816UR-G ■TEST CIRCUITS (Continued) Evaluation Board 18mm VDD 20mm C1 RBIAS L1 PIN L2 POUT L3 C2 VSS VCE PCB (FR-4) MICROSTRIPLINE WIDTH=0.6mm t=0.18mm PCB size=18mm × 20mm * Please use an external component which does not depend on bias or temperature too much. External Components SYMBOL SPEC COMMENT C1 10nF - C2 100pF - L1 18nH MURATA (LQW15A18NG00D) 2 11nH MURATA (LQW15A11NG00D) L3 8.7nH MURATA (LQW15A8N7G00D) RBIAS - Less than ±1% tolerance, Less than ±200ppm/℃ temperature stability 9/18 XC2407A816UR-G ■TYPICAL PERFORMANCE CHARACTERISTICS CE “H” Level Voltage vs. Supply Voltage (2)(2) CE"H"レベル電圧 - 電源端子電圧特性例 (1) (1) Current Circuits vs. Supply Voltage 回路電流 - 電源端子電圧特性例 XC2407A816 4.5 4 3.5 3 2.6 2.7 2.8 2.9 3 Power Supply Voltage : VDD (V) 3.1 電源端子電圧特性例 (3) (3) CECE"L"レベル電圧 “L” Level Voltage -vs. Power Supply Voltage CE "H" Level Voltage : VCEH(V) VDD=VCE, Ta=25℃ 5 Current Circuits : IDD (mA) XC2407A816 Ta=25℃ 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 2.6 XC2407A816 VDD=VCE、Ta=25℃, f=1.575GHz 15.4 1 Power Gain : S21 (dB) CE "L" Level Voltage : VCEL(V) Ta=25℃ 0.9 0.8 0.7 0.6 0.5 0.4 2.6 2.7 2.8 2.9 3 Power Supply Voltage : VDD (V) 15.35 15.3 15.25 15.2 15.15 15.1 2.6 3.1 XC2407A816 -9.4 -9.6 -9.8 -10 -10.2 -10.4 3.1 Output Return Loss : S22 (dB) Input Return Loss : S11 (dB) VDD=VCE、Ta=25℃, f=1.575GHz 10/18 3.1 XC2407A816 -9.2 2.7 2.8 2.9 3 Power Supply Voltage : VDD (V) 2.7 2.8 2.9 3 Power Supply Voltage : VDD (V) (6)(6)出力側リターンロス - 電源端子電圧特性例 Output Return Loss vs. Supply Voltage 入力側リターンロス 電源端子電圧特性例 (5)(5)Input Return Loss vs.- Power Supply Voltage 2.6 3.1 (4)(4) 挿入電力利得 Power Gain -vs.電源端子電圧特性例 Power Supply Voltage XC2407A816 1.1 2.7 2.8 2.9 3 Power Supply Voltage : VDD (V) VDD=VCE、Ta=25℃, f=1.575GHz -8.5 -9 -9.5 -10 -10.5 -11 2.6 2.7 2.8 2.9 3 3.1 Power Supply Voltage : VDD (V) XC2407A816UR-G ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (8) Noise Figure vs. Power Supply Voltage (8) 雑音指数 - 電源端子電圧特性例 (7) vs. Power Supply Voltage (7)Isolation アイソレーション - 電源端子電圧特性例 XC2407A816 VDD=VCE、Ta=25℃, f=1.575GHz VDD=VCE、Ta=25℃, f=1.575GHz 1.6 Noise Figure : NF (dB) -21.8 Isolation : S12 (dB) XC2407A816 -21.9 -22 -22.1 -22.2 2.6 2.7 2.8 2.9 3 Power Supply Voltage : VDD (V) 1.4 1.2 1 0.8 0.6 0.4 2.6 3.1 2.7 2.8 2.9 3 Power Supply Voltage : VDD (V) (10) (10) Input入力IP2 Power IP2 vs. Power Supply Voltage - 電源端子電圧特性例 (9) Power IP3 vs. Power Supply Voltage (9)Input 入力IP3 - 電源端子電圧特性例 XC2407A816 XC2407A816 -4 -4.5 -5 -5.5 -6 -6.5 -7 2.7 2.8 2.9 3 Power Supply Voltage : VDD (V) 3.1 VDD=VCE, Ta=25℃, f=0.8GHz, 2.375GHz Input Power IP2 : IIP2 (dBm) Input Power IP3 : IIP3 (dBm) VDD=VCE, Ta=25℃, f=1.575GHz, 1.576GHz 2.6 3.1 14 13 12 11 10 9 2.6 2.7 2.8 2.9 3 Power Supply Voltage : VDD (V) 3.1 (12) (12) Power Gain vs. Ambient Temperature (11) Power @ 1dB Gain Compression-vs.電源端子電圧特性例 Power Supply Voltage (11)Input 1dB利得圧縮時入力電力 挿入電力利得 - 周囲温度特性例 XC2407A816 VDD=VCE=2.85V,f=1.575GHz VDD=VCE、Ta=25℃, f=1.575GHz -15 18 -16 17 Power Gain : S21 (dB) Input Power @ 1dB Gain Compression : P1dB (dBm) XC2407A816 -17 -18 -19 -20 2.6 2.7 2.8 2.9 3 3.1 Power Supply Voltage : VDD (V) 16 15 14 13 -50 -25 0 25 50 75 Ambient Temperature : Ta (℃) 100 11/18 XC2407A816UR-G ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (13) Input Return Loss vs.-Ambient Temperature (13) 入力側リターンロス 周囲温度特性例 (14) Return Loss -vs.周囲温度特性例 Ambient Temperature (14)Output 出力側リターンロス -9 -9.2 -9.4 -9.6 -9.8 -10 -10.2 -10.4 -10.6 -10.8 -11 -50 XC2407A816 VDD=VCE=2.85V,f=1.575GHz -25 0 25 50 75 100 Ambient Temperature : Ta (℃) (15) Isolation vs. Ambient Temperature (15) アイソレーション - 周囲温度特性例 Output Return Loss : S22 (dB) Input Return Loss : S11 (dB) XC2407A816 -9 -9.5 -10 -10.5 -11 -50 VDD=VCE=2.85V,f=1.575GHz VDD=VCE=2.85V,f=1.575GHz Noise Figure : NF (dB) Isolation : S12 (dB) XC2407A816 -22 -22.5 -23 -50 -25 0 25 50 75 100 Ambient Temperature : Ta (℃) (17) Input Power- IP3 vs. Ambient Temperature (17) 入力IP3 周囲温度特性例 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 Ambient Temperature : Ta (℃) VDD=VCE=2.85V, f=0.8GHz, 2.375GHz Input Power IP2 : IIP2 (dBm) Input Power IP3 : IIP3 (dBm) 100 XC2407A816 VDD=VCE=2.85V, f=1.575GHz, 1.576GHz 12/18 -25 0 25 50 75 Ambient Temperature : Ta (℃) (18) Power IP2 vs. Ambient Temperature (18)Input 入力IP2 - 周囲温度特性例 XC2407A816 -3 -3.5 -4 -4.5 -5 -5.5 -6 -6.5 -7 -50 -25 0 25 50 75 100 Ambient Temperature : Ta (℃) (16) Figure vs. Ambient Temperature (16)Noise 雑音指数 - 周囲温度特性例 XC2407A816 -21.5 VDD=VCE=2.85V,f=1.575GHz 12 11.5 11 10.5 10 9.5 9 -50 -25 0 25 50 75 Ambient Temperature : Ta (℃) 100 XC2407A816UR-G ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (19) Input1dB利得圧縮時入力電力 Power @ 1dB Gain Compression- vs. Ambient Temperature (19) 周囲温度特性例 (20) Power Gain vs.- Frequency (20) 挿入電力利得 周波数特性例 Input Power @ Gain 1dB Gain Input Power @ 1dB Compression Compression : P1dB (dBm) : P1dB (dBm) XC2407A816 XC2407A816 Power Gain : S21 (dB) -16 -17 -18 -19 -20 -50 VDD=VCE=2.85V VDD=VCE=2.85V,f=1.575GHz -15 -25 0 25 50 75 100 Ambient Temperature : Ta (℃) 20 18 16 14 12 10 8 6 4 -40℃ 25℃ 85℃ 1 1.2 XC2407A816 VDD=VCE=2.85V -2 -4 -6 25℃ -40℃ 85℃ -10 -12 1 1.2 1.4 1.6 1.8 Frequency : f (GHz) 2 Output Return Loss : S22 (dB) Input Return Loss : S11 (dB) XC2407A816 -8 VDD=VCE=2.85V Power Gain : S21 (dB) Isolation : S12 (dB) -10 -20 -30 25℃ -40℃ 85℃ -60 1.2 1 1.2 1.4 1.6 1.8 Frequency : f (GHz) 2 VDD=VCE=2.85V 0 1 25℃ -40℃ 85℃ XC2407A816 XC2407A816 -50 VDD=VCE=2.85V 0 -2 -4 -6 -8 -10 -12 -14 -16 (24) Gain vs. Input Power (24)Power 挿入電力利得－入力電力特性例 (23)(23) Isolation vs. Frequency アイソレーション - 周波数特性例 -40 2 (22) Return Loss -vs.周波数特性例 Frequency (22)Output 出力側リターンロス (21)(21) Input Return Loss vs. Frequency 入力側リターンロス - 周波数特性例 0 1.4 1.6 1.8 Frequency: f (GHz) 1.4 1.6 1.8 Frequency : f (GHz) 2 20 25℃ -40℃ 18 16 14 12 85℃ 10 8 6 -40 -35 -30 -25 -20 -15 Input Power : PIN (dBm) -10 13/18 XC2407A816UR-G ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (26) Input Return Loss vs. Frequency (Smith Chart) (26)入力側リターンロス －周波数特性例 (スミス図) (25)(25) Output Power / IM3 vs. Input Power 出力電力/IM3 － 入力電力特性例 XC2407A816 Output Power : POUT (dBm) 100 0 -20 Desire 80 Undesire -40 60 -60 40 -80 20 IM3 -100 -60 -50 -40 -30 -20 -10 Input Power : PIN (dBm) 0 0 Inter-Modulation distortion: IM3 (dBm) XC2407A816 VDD=VCE=2.85V, Ta=25℃, f=1.575GHz, 1.576GHz VDD=VCE=2.85V, Ta=25℃ f=1GHz～2GHz f=1.575GHz 出力リターンロス (スミス図) (27)(27) Output Return Loss－周波数特性例 vs. Frequency (Smith Chart) XC2407A816 VDD=VCE=2.85V, Ta=25℃ f=1GHz～2GHz f=1.575GHz 14/18 XC2407A816UR-G ■PACKAGING INFORMATION ●USP-8A01 (unit:mm) 1.5±0.05 1PIN INDENT 0.1±0.05 0.1±0.05 4 3 5 2 6 1 7 8 0.3±0.05 0.2±0.05 0.3±0.05 15/18 XC2407A816UR-G ■PACKAGING INFORMATION (Continued) ●USP-8A01 Reference Pattern Layout (unit:mm) Is cupper area. 0.75 ※0.85 0.75 ※0.85 ●USP-8A01 Reference Metal Mask Design (unit:mm) 16/18 1.9 ※2.0 0.25 ※0.35 0.25 0.25 ※0.35 ※0.35 0.5 0.5 ※0.35 ※0.35 ※0.45 0.25 0.25 0.35 Mark ※ is opening of resist. XC2407A816UR-G ■MARKING RULE USP-8A01 ① represents product series. 8 ① ② ③ 3 6 ⑤ 2 7 ④ 1 4 5 MARK PRODUCT SERIES 7 XC2407******-G ② represents product. MARK ② A PRODUCT SERIES XC2407A*****-G ③ represents product. MARK ③ 8 PRODUCT SERIES XC2407*8****-G ④,⑤ represents production lot number. 01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to AZ and B1 to ZZ in order. (G, I, J, O, Q, W excepted) *No character inversion used. 17/18 XC2407A816UR-G 1. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this datasheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD. 18/18