XC2401A8167R-G ETR2701-004 1.6 GHz Low Noise Amplifier ■GENERAL DESCRIPTION The XC2401A8167R-G is an ultra-low-noise amplifier (LNA) with low operating voltage, low nose figure (NF), low power consumption using CMOS process. The device offers easy output matching to 50Ω for input and output with less external components. An internal self bias function eliminates external bias setting. The device operates at 1.2V. For higher power supplies such as 1.8V and 2.85V, the device can operate with a self bias of one adding resister. . ■APPLICATIONS ●GPS RF module ■FEATURES Noise Figure Low Power Consumption High Gain Operation Voltage Range Output Operating Temperature Range Ultra Small Package Environmentally Friendly ：NF=0.69dB(TYP.) (@ 1.575GHz) ：6.6mW (TYP.) @ VDD=1.2V, Fixed Bias ：S21 =15dB(TYP.) (@ 1.575GHz) ：1.14V∼1.26V @ Fixed Bias ：CMOS Output, 50Ω driver built-in ：-40℃∼+85℃ ：USPN-4B02 ：EU RoHS Compliant, Pb Free ■TYPICAL APPLICATION CIRCUIT ■ TYPICAL PERFORMANCE CHARACTERISTICS Figure 1: Fixed Bias XC2401A816 S21 [dB] Figure 2: Self Bias 2.8 16.0 2.4 15.0 2 14.0 1.6 13.0 1.2 12.0 0.8 11.0 0.4 10.0 1.375 1.475 1.575 1.675 0 1.775 Frequency [GHz] VIN [V] Rbias [Ω] 3.00 560 2.85 470 1.80 160 * RBIAS should be in ±1% tolerance and ±200ppm/℃ temperature stability. 1/16 NF [dB] VDD =1.2V Ta=25℃ 17.0 XC2401A8167R-G ■PIN CONFIGURATION USPN-4B02 （BOTTOM VIEW） ■PIN ASSIGNMENT PIN NUMBER USPN-4B02 PIN NAME FUNCTION 1 VDD Power Supply RF 2 RF_OUT RF Signal Output 3 VSS Ground 4 RF_IN RF Signal Input ■PRODUCT CLASSIFICATION ●Ordering Information PRODUCT NAME XC2401A8167R-G (*1) 2/16 (*1) PACKAGE ORDER UNIT USPN-4B02 5,000/Reel The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant. XC2401A8167R-G ■BLOCK DIAGRAM ■ABSOLUTE MAXIMUM RATINGS PARAMETER Supply Voltage Supply Circuit RF Input Power RF_IN Input Voltage RF_OUT Input Voltage Power Dissipation Operating Temperature Range Storage Temperature Range SYMBOL VDD IDD PIN RF_IN RF_OUT Pd Topr Tstg Ta=25℃ RATINGS VSS - 0.3 ∼ 1.60 30 10 VSS - 0.3 ∼ VDD + 0.3 VSS - 0.3 ∼ VDD + 0.3 100 -40∼+85 -55∼+125 UNITS V mA dBm V V mW o C o C 3/16 XC2401A8167R-G ■ELECTRICAL CHARACTERISTICS ●DC Characteristics Ta=25℃ Fixed Bias (refer to TYPICAL APPLICATION CIRCUIT, Figure 1) PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT Power Supply Pin Voltage VDD - 1.14 1.20 1.26 V ① Current Circuit IDD VDD=1.2V 5.5 10.5 mA ① MIN. TYP. MAX. UNITS CIRCUIT 2.850 3.000 3.150 V ① 2.708 2.850 2.992 V ① 1.710 1.800 1.890 V ① 0.90 1.12 1.32 V ① - 4.25 5.50 mA ① Self Bias (refer to TYPICAL APPLICATION CIRCUIT, Figure 2) PARAMETER Input Power Supply Voltage 1 Input Power Supply Voltage 2 Input Power Supply Voltage 3 Power Supply Pin Voltage Current Circuit SYMBOL CONDITIONS VDD Rbias=560Ω±1％ ±200ppm/℃ Rbias=470Ω±1％, ±200ppm/℃ Rbias=160Ω±1％, ±200ppm/℃ VIN = VIN1, VIN2, VIN3 IDD VIN = VIN1, VIN2, VIN3 VIN1 VIN2 VIN3 * When the device is used in self bias, please use the specified RBIAS and CBIAS. 4/16 XC2401A8167R-G ■ELECTRICAL CHARACTERISTICS (Continued) ●AC Characteristics VDD=1.2V Ta=25℃ PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT Power Gain S21 f=1.575 GHz 11.5 15.0 - dB ② Input Return Loss S11 f=1.575GHz - 6 - dB ② Output Return Loss S22 f=1.575GHz - 6 - dB ② Isolation S12 f=1.575GHz - -20 - dB ② Noise Figure (*1) NF f=1.575GHz - 0.69 - dB ③ Input Power IP3 IIP3 f=1.575GHz, 1.576GHz Pin = -30dBm - -1.0 - dBm ④ Input Power @ 1dB Gain Compression P1dB f=1.575GHz - -12 - dBm ② *1: NF is the value excluding the PCB loss. Note 1. In case symptoms of transient voltage drop and rise temporarily, please use this IC within the stated maximum ratings. The IC is liable to malfunction should the ratings be exceeded. 2. Please eliminate static electricity from the operational table, people, and soldering iron. 3. Please use noiseless power supply for stable operation. 4. Please use ±1% Rbias with ±200ppm/℃ temperature stability and 10nF Cbias. 5. Please connect Cbias to VDD pin as close as possible. 6. Please ensure to use an external component which does not depend on bias or temperature too much. 7. We will improve the product quality and improve reliability, however please make sure to design fail safe or pre-aging treatment on the system. 5/16 XC2401A8167R-G ■TEST CIRCUITS ●Circuit ① (DC Characteristics: Power Supply Pin Voltage, Circuit Current, Input Power Supply Voltage) * Fixed Bias: Rbias=0Ω, VIN=VDD ** Pin / Pout is 50Ω ●Circuit ② (Power Gain, Input Return Loss, Output Return Loss, Isolation, Input Power @ 1dB Gain Compression) *1: Refer to the circuit ⑤ for the block detail. ●Circuit ③ (Noise Figure) *1: Refer to the circuit ⑤ for the block detail. 6/16 XC2401A8167R-G ■TEST CIRCUITS (Continued) ●Circuit ④ (Input Power IIP3) *1: Refer to the circuit ⑤ for the block detail. ●Circuit ⑤ (XC2401 series, the circuit of the block) 100pF RF_IN RF_OUT Rbias VIN VDD VSS Cbias=10nF VIN(V) Rbias(Ω) 3.00 560 * Fixed Bias: Rbias=0Ω, VIN=VDD 2.85 470 ** Rbias: Should be in ±1% tolerance and ±200ppm/℃ temperature stability. 1.80 160 7/16 XC2401A8167R-G ■EVALUATION BOARD 18mm VDD VSS R1 C2 Pout C1 L2 Pin L1 20mm SYMBOL SPEC C1 100pF C2 10nF L1 9.1nH L2 6.2nH R1 (*1) (Rbias) 8/16 - (*1) COMMENT MURATA (GRM1552C1H) TDK (GLQ1005type) TDK ( GLQ1005type) Less than ±1% tolerance, Less than ±200ppm/℃ temperature stability PCB(FR-4) MICROSTRIPLINE WIDTH = 0.6mm t = 0.018mm PCB size = 20mm×18mm *1: Fixed Bias: Rbias=0Ω * Please use an external component which does not depend on bias or temperature too much. XC2401A8167R-G ■TYPICAL PERFORMANCE CHARACTERISTICS (2) Power Gain vs. Supply Voltage (1) Supply Circuit vs. Supply Voltage XC2401A816 XC2401A816 Ta=25℃、Pin=-35dBm 16.5 10.0 16.0 Power Gian ： S21(dB) Supply Current: IDD (mA) Ta=25℃ 12.0 8.0 6.0 4.0 2.0 0.0 15.5 15.0 14.5 14.0 13.5 1.12 1.14 1.16 1.18 1.2 1.22 1.24 1.26 1.28 1.12 1.14 1.16 1.18 1.2 1.22 1.24 1.26 1.28 Supply V oltage: V DD(V ) Supply V oltage: V DD(V ) (4) Output Return Loss vs. Supply Voltage (3) Input Return Loss vs. Supply Voltage XC2401A816 XC2401A816 Ta=25℃、Pin=-35dBm Ta=25℃、Pin=-35dBm Outtput Return Loss ：S22 (dB) Intput Return Loss ： S11 (dB) -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 1.12 1.14 1.16 1.18 1.2 1.22 1.24 1.26 1.28 1.12 1.14 1.16 1.18 1.2 1.22 1.24 1.26 1.28 Supply V oltage: V DD(V ) Supply V oltage: V DD(V ) (6) Noise Figure vs. Supply Voltage (5) Reverse Isolation vs. Supply Voltage XC2401A816 XC2401A816 Ta=25℃、f=1.575GHz -21.0 1.2 -21.5 1.0 Noise Figure: NF (dB) Reverse Isolation ：S12 (dB) Ta=25℃、Pin=-35dBm -22.0 -22.5 -23.0 -23.5 -24.0 0.8 0.6 0.4 0.2 0.0 1.12 1.14 1.16 1.18 1.2 1.22 1.24 1.26 1.28 1.12 1.14 1.16 1.18 1.2 1.22 1.24 1.26 1.28 Supply V oltage: V DD(V ) Supply V oltage: V DD(V ) 9/16 XC2401A8167R-G ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (8) Input Power @ 1dB Gain compression vs. Power Supply Voltage (7) Input 3 Order Intercept Point vs. Supply Voltage XC2401A816 XC2401A816 VDD=1.2V,Pin=-30dBm -10.5 Input Power @1dB Gian Compression: P1dB (dBm) Input 3Order Intercept Point: IIP3(dBm) Ta=25℃、f=1.575GHz f =1.575＆1.576GHz 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -11.0 -11.5 -12.0 -12.5 -13.0 -13.5 -1.2 -50 -25 0 25 50 75 1.12 1.14 1.16 1.18 1.2 1.22 1.24 1.26 1.28 100 Supply V oltage: V DD(V ) A mbient Temperature:Ta( ℃ ) (10) Power Gain vs. Ambient Temperature (9) Supply Current vs. Ambient Temperature XC2401A816 XC2401A816 VD D = 1.2V Pin=-35dBm 16.5 10.0 16.0 Power Gian ： S21(dB) Supply Current: IDD (mA) VD D =1.2V 12.0 8.0 6.0 4.0 2.0 15.5 15.0 14.5 14.0 13.5 0.0 -50 -25 0 25 50 75 100 -50 A mbient Temperature:Ta( ℃ ) -25 0 25 XC2401A816 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 25 50 75 A mbient Temperature:Ta( ℃ ) 10/16 VD D = 1.2V Pin=-35dBm Outtput Return Loss ： S22 (dB) Intput Return Loss ： S11 (dB) VDD= 1.2V Pin=-35dBm 0 100 (12) Output Return Loss vs. Ambient Temperature XC2401A816 -25 75 A mbient Temperature:Ta( ℃ ) (11) Input Return Loss vs. Ambient Temperature -50 50 100 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -50 -25 0 25 50 75 A mbient Temperature:Ta( ℃ ) 100 XC2401A8167R-G ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (14) Noise Figure vs. Ambient Temperature (13) Reverse Isolation vs. Ambient Temperature XC2401A816 VD D = 1.2V Pin=-35dBm -21.0 VDD=1.2V、f =1.575GHz 1.2 -21.5 Noise Figure: NF (dB) Reverse Isolation: S12 (dB) XC2401A816 -22.0 -22.5 -23.0 -23.5 -24.0 -50 -25 0 25 50 75 1.0 0.8 0.6 0.4 0.2 0.0 100 -50 -25 A mbient Temperature:Ta( ℃ ) -0.4 -0.6 -0.8 -1.0 -1.2 100 VDD= 1.2V Pin=-35dBm -11.0 -11.5 -12.0 -12.5 -13.0 -13.5 1.12 1.14 1.16 1.18 1.2 1.22 1.24 1.26 1.28 -50 -25 Supply V oltage: V DD(V ) 0 25 50 75 100 A mbient Temperature:Ta( ℃ ) (18) Input Return Loss vs. Frequency (17) Power Gain vs. Frequency XC2401A816 XC2401A816 VD D = 1.20V Pin=-35dBm VD D = 1.20V Pin=-35dBm 20 -1.5 Intput Return Loss ： S11 (dB) Power Gian ： S21(dB) 75 -10.5 -0.2 18 -40℃ 16 25℃ 14 85℃ 12 10 8 1.00 50 XC2401A816 Ta=25℃,Pin=-30dBm f =1.575＆ 1.576GHz Input Power @1dB Gian Compression: P1dB (dBm) Input 3Order Intercept Point: IIP3(dBm) 0.0 25 (16) Input Power @ 1dB Gain Compression vs. Ambient Temperature (15) Input 3 Order intercept point vs. Ambient Temperature XC2401A816 0 A mbient Temperature:Ta( ℃ ) 1.20 1.40 1.60 Frequency ： f [GHz] 1.80 2.00 -2.5 -3.5 -4.5 85℃ -5.5 -6.5 -7.5 1.00 25℃ 1.20 -40℃ 1.40 1.60 Frequency ： f [GHz] 1.80 2.00 11/16 XC2401A8167R-G ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (20) Isolation vs. Frequency (19) Output Return Loss vs. Frequency XC2401A816 XC2401A816 VD D = 1.20V Pin=-35dBm VD D = 1.20V Pin=-35dBm -20 Reverse Isolation ： S12 (dB) Outtput Return Loss ： S22 (dB) -4 -5 -6 -7 85℃ -8 25℃ -9 -40℃ -10 1.00 1.20 1.40 1.60 Frequency ： f [GHz] 1.80 -22 25℃ -23 -40℃ -24 -25 -26 1.00 2.00 85℃ -21 1.20 1.40 1.60 Frequency ： f [GHz] XC2401A816 XC2401A816 VD D = 1.20V Pin=-35dBm VD D = 1.20V , f=1.575GHz 6 18 -40℃ 5 16 Power Gian :P(dB) Noise Figure: NF (dB) 2.00 (22) Power Gain vs. Input Power (21) Noise Figure vs. Frequency 4 3 25℃ 2 85℃ -40℃ 1 0 1.00 1.20 1.40 1.60 Frequency ： f [GHz] 1.80 XC2401A816 VD D =1.2V、Ta=25℃ 120 0 100 Desire -20 80 -40 60 Undesire -60 40 -80 20 IM3 -100 -50 -40 -30 -20 -10 Input Pow er: Pin(dBm) 12/16 Inter-Modulation distortion: IM3(dB) 20 0 0 10 14 25℃ 12 85℃ 10 8 -40 2.00 (23) Output Power / IM3 vs. Input Power O utput Power:Pout(dBm) 1.80 -35 -30 -25 -20 -15 Input Pow er:Pin(dBm) -10 -5 XC2401A8167R-G ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (24) Input Return Loss vs. Frequency (Smith Chart) XC2401A816 (25) Output Return Loss vs. Frequency (Smith Chart) XC2401A816 VDD=1.2V, Pin=-35dBm VDD=1.2V, Pin=-35dBm 1.575GHz 1.575GHz 13/16 XC2401A8167R-G ■ PACKAGING INFORMATION 14/16 0.325±0.05 0.2±0.05 +0.02 0.38 -0.03 0.95±0.05 ●USPN-4B02 XC2401A8167R-G ■ PACKAGING INFORMATION (Continued) ●USPN-4B02 Reference Pattern Layout 0.2 0.35 0.5 0.35 ●USPN-4B02 Reference Metal Mask Design ■MARKING RULE USPN-4B02 4 ① 3 ② ③ ① represents product series. MARK PRODUCT SERIES 8 XC2401******-G ② represents product. MARK 1 2 ② A PRODUCT SERIES XC2401A816**-G ③ represents production lot number. 01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to Z9, ZA to ZZ in order. (G, I, J, O, Q, W excepted) *No character inversion used. 15/16 XC2401A8167R-G 1. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this datasheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD. 16/16