ISC MJ6308

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJ6308
DESCRIPTION
·700V Collector-Base Breakdown Capability
·Excellent Dynamic Saturation Characteristics
·Fast swithing
·Low Saturation Voltage
·Advanced Technology Replacement for the 2N6308
APPLICATIONS
·Designed in circuits requiring good dynamio saturation
characteristics in swithing power supply applications and
other inductive swithing circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
700
V
VCES
Collector-Emitter Sustaining Voltage
380
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
4
A
PC
Collector Power Dissipation@TC=25℃
140
W
TJ
Junction Temperature
200
℃
-65~200
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.25
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJ6308
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 10mA; IB= 0
380
V
V(BR)EBO
Emitter-Collector Breakdown Voltage
IE= 1.0mA; IC= 0
10
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC=3A; IB= 0.4A
1
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 6A; IB= 1A
1
V
Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
1.5
V
ICES
Collector Cutoff Current
VCE=700V; VBE=0V
VCE=700V; VBE=0V, Tc=100℃
0.1
1.5
mA
IEBO
Emitter Cutoff current
VEB=10V; IC= 0
10
μA
hFE
DC Current Gain
IC= 8A; VCE=5V
Cob
Output Capacitance
VCE=10V; IE= 0; ftest=1.0KHz
VBE(sat)
isc Website:www.iscsemi.cn
B
B
5
20
100
pF