isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2520AW DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of large screen color TV receivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 10 A ICM Collector Current-Peak 25 A IB Base Current- Continuous 6 A IBM Base Current-Peak 9 A PC Collector Power Dissipation @ TC=25℃ 125 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2520AW ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.1 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V hFE-2 DC Current Gain IC= 6A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz B B MAX UNIT 13 5 9.5 115 pF Switching times tstg tf Storage Time Fall Time isc Website：www.iscsemi.cn IC= 6A , IB(end)= 1.0A;LC= 650μH; LB= 5.3μH; Cfb= 19nF; -VBB= 4V; (-dIB/dt= 0.8A/μs) 2 5.5 μs 0.5 μs