isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE340T DESCRIPTION ·Collector–Emitter Sustaining Voltage: VCEO(SUS) = 300 V(Min) ·DC Current Gain: hFE = 100(Min) @ IC= 50mA ·Low Collector Saturation Voltage: VCE(sat) = 1.0V(Max.)@ IC= 50mA APPLICATIONS ·Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 0.5 A PC Collector Power Dissipation TC=25℃ 20 W Ti Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 6.25 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE340T ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB= 0 300 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1.0mA; IE= 0 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1.0mA; IC= 0 3 V VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA ;IB= 5mA 1.0 V ICBO Collector Cutoff Current VCB= 300V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.1 mA hFE DC Current Gain IC= 50m A ; VCE= 10V isc Website：www.iscsemi.cn CONDITIONS B MIN B 100 MAX 240 UNIT