BCDSEMI AZV358GTR-G1

Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
General Description
Features
The AZV358 is dual low voltage (2.7-5.5V)
operational amplifiers which have rail-to-rail output
swing capability. The input common-mode voltage
range includes ground. The chip exhibits excellent
speed-power ratio, achieving 1MHz of bandwidth and
1V/µs of slew rate with low supply current.
(For VCC=5V and VEE=0V, typical unless otherwise
noted)
· Guaranteed 2.7V to 5.5V Performance
· No Crossover Distortion
· Gain-Bandwidth Product 1MHz
· Industrial Temperature Range: -40oC to +85oC
· Low Supply Current: 210µA
· Rail-to-Rail Output Swing under 10kΩ Load:
VOH up to VCC -10mV
VOL near to VEE +65mV
The AZV358 is built with BiCMOS process. It has
bipolar input and output stages for improved noise performance, low input offset voltage and higher output
current drive.
·
AZV358 is available in the package of TSSOP-8 and
MSOP-8. The small packages save space on pc
boards, and enable the design of small portable electronic devices. It also allows the designer to place
the device closer to the signal source to reduce
noise pickup and increase signal integrity.
Applications
·
·
·
·
·
AZV358 is also available in standard SOIC-8 package.
SOIC-8
VCM: -0.1V to VCC-0.8V
Active Filters
Low Power, Low Voltage Applications
General Purpose Portable Devices
Cellular Phone, Cordless Phone
Battery-Powered Systems
MSOP-8
TSSOP-8
Figure 1. Package Types of AZV358
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
1
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Pin Configuration
M/G/MM Package
(SOIC-8/TSSOP-8/MSOP-8)
OUTPUT 1
1
8
VCC
IN 1-
2
7
OUTPUT 2
IN 1+
3
6
IN 2-
VEE
4
5
IN 2+
Figure 2. Pin Configuration of AZV358 (Top View)
Functional Block Diagram
VCC
VBIAS1
VBIAS2
IN-
OUTPUT
IN+
VBIAS3
VEE
Figure 3. Functional Block Diagram of AZV358 (Each Block)
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
2
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Ordering Information
-
AZV358
E1: Lead Free
G1: Green
Circuit Type
Package
M: SOIC-8
G: TSSOP-8
MM: MSOP-8
Package
Temperature
Range
SOIC-8
-40 to 85oC
TSSOP-8
-40 to 85oC
MSOP-8
-40 to 85oC
Blank: Tube
TR: Tape and Reel
Part Number
Lead Free
Marking ID
Green
Lead Free
Green
Packing Type
AZV358M-E1
AZV358M-G1
AZV358M-E1
AZV358M-G1
Tube
AZV358MTR-E1
AZV358MTR-G1
AZV358M-E1
AZV358M-G1
Tape & Reel
AZV358G-E1
AZV358G-G1
EG3E
GG3E
Tube
AZV358GTR-E1
AZV358GTR-G1
EG3E
GG3E
Tape & Reel
AZV358MM-E1
AZV358MM-G1
AZV358MM-E1
AZV358MM-G1
Tube
AZV358MMTR-E1
AZV358MMTR-G1
AZV358MM-E1
AZV358MM-G1
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
Absolute Maximum Ratings (Note 1)
Parameter
Power Supply Voltage
Operation Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10 Seconds)
Symbol
VCC
Value
Unit
6
V
TJ
150
oC
TSTG
-65 to 150
oC
TLEAD
260
oC
200
2000
V
V
ESD (Machine Model)
ESD (Human Body Model)
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage
Ambient Operating Temperature Range
Symbol
Min
Max
VCC
2.7
5.5
V
TA
-40
85
oC
Mar. 2010 Rev. 1. 3
Unit
BCD Semiconductor Manufacturing Limited
3
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
2.7V Electrical Characteristics
Limits in standard typeface are for TA=25oC, bold typeface applies over TA=-40oC to 85oC, VCC=2.7V, VEE=0V, VCM=1.0V,
VO=VCC/2 and RL>1MΩ, unless otherwise specified. (Note 2)
Parameter
Symbol
Conditions
VIO
Input Offset Voltage
Input Bias Current
IB
Input Offset Current
IIO
VO=VCC/2, AVCL=1, No load
Rejection
Output Short Circuit Current
Output Voltage Swing
Gain Bandwidth Product
250
50
150
ICC
Supply
7
5
Supply Current
Power
Ratio
1.7
500
for CMRR≥50dB
Rejection
Max
11
VCM
Mode
Typ
9
Input Common Mode Voltage
Range
Common
Ratio
Min
-0.1
1.9
140
340
420
Unit
mV
nA
nA
V
µA
CMRR
0≤VCM≤1.7V
50
63
dB
PSRR
2.7V≤VCC≤5V VO=1V,
50
60
dB
ISOURCE VO=0V
ISINK
VOH
VOL
GBWP
VO=2.7V
RL=10kΩ to 1.35V
CL=200pF
5
20
mA
10
30
mA
2.60
2.69
V
60
180
mV
1
MHz
Phase Margin
φM
60
deg
Gain Margin
GM
10
dB
Note 2: Limits over the full temperature are guaranteed by design, but not tested in production.
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
4
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
5V Electrical Characteristics
Limits in standard typeface are for TA=25oC, bold typeface applies over TA=-40oC to 85oC, VCC=5V, VEE=0V, VCM=2.0V,
VO=VCC/2 and RL>1MΩ, unless otherwise specified. (Note 2)
Parameter
Symbol
Conditions
Input Bias Current
IB
Input Offset Current
IIO
15
5
Supply Current
ICC
VO=VCC/2, AVCL=1, No load
Large Signal Voltage Gain
GV
RL=2kΩ
Supply
Rejection
Output Short Circuit Current
-0.1
4.2
210
440
615
84
100
mV
nA
nA
V
µA
dB
80
0≤VCM≤4V
50
63
dB
PSRR
2.7V≤VCC≤5V VO=1V, VCM=1V
50
60
dB
ISOURCE VO=0V
5
60
mA
VO=5V
10
160
mA
4.7
4.96
ISINK
RL=2kΩ to 2.5V
RL=10kΩ to 2.5V
Output Voltage Swing
VOL
RL=2kΩ to 2.5V
RL=10kΩ to 2.5V
Gain Bandwidth Product
50
Unit
CMRR
VOH
Slew Rate
250
150
for CMRR≥50dB
Power
Ratio
7
500
VCM
Rejection
Max
9
Input Common Mode Voltage
Range
Mode
Typ
1.7
VIO
Input Offset Voltage
Common
Ratio
Min
SR
GBWP
CL=200pF
4.6
4.9
V
4.99
4.8
120
300
400
65
180
mV
280
1
V/µs
1
MHz
Phase Margin
φM
60
deg
Gain Margin
GM
10
dB
Note 2: Limits over the full temperature are guaranteed by design, but not tested in production.
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
5
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Typical Performance Characteristics
300
300
VO=VCC/2
No Load
250
VO=VCC/2
No Load
280
240
Supply Current (µA)
Supply Current (µA)
260
200
150
o
TA= -40 C
100
O
TA=25 C
O
TA=85 C
50
220
180
VCC=2.7V
160
140
120
0
0
1
2
3
4
5
Supply Voltage (V)
100
-40
6
-20
0
20
40
60
80
O
Temperature ( C)
Figure 4. Supply Current vs. Supply Voltage
Figure 5. Supply Current vs. Temperature
60
1.2
1.0
Output Short Circuit Current_ISOURCE (mA)
AV=1
VIN=1Vp-p
RL=10KΩ to 1/2VCC
1.1
0.9
Slew Rate (V/µS)
VCC=5V
200
0.8
0.7
Falling Edge
Rising Edge
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.5
3.0
3.5
4.0
4.5
5.0
VEE=0V
VO short to VEE
50
40
30
20
10
2.5
5.5
3.0
3.5
4.0
4.5
5.0
5.5
Supply Voltage (V)
Supply Voltage (V)
Figure 6. Slew Rate vs. Supply Voltage
Figure 7. Output Short Circuit Current vs. Supply Voltage
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
6
Data sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Typical Performance Characteristics (Continued)
140
100
VEE=0V
VO short to VCC
Output Short Circuit Current _ ISource (mA)
Output Short Circuit Current_ISINK (mA)
160
120
100
80
60
40
20
0
2.5
3.0
3.5
4.0
4.5
5.0
80
70
60
VCC=5V
50
40
30
20
VCC=2.7V
10
0
-40
5.5
Supply Voltage (V)
-20
0
20
O
40
60
80
Temperature ( C)
Figure 9. Output Short Circuit Current
vs.Temperature
Figure 8. Output Short Circuit Current
vs. Supply Voltage
200
10
VEE=0V
VO to VCC
180
VO- Output Voltage Referenced to VCC (V)
Output Short Circuit Current_ISINK (mA)
VEE=0V
VO to VEE
90
160
140
VCC=5V
120
100
80
60
40
VCC=2.7V
20
0
-40.0
-20.0
0.0
20.0
40.0
60.0
VCC=5V, VEE=0
1
0.1
0.01
1E-3
0.1
80.0
O
Temperature ( C)
Figure 10. Output Short Circuit Current
vs.Temperature
1
10
Source Current (mA)
100
Figure 11. Output Voltage
vs.Output Source Current
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
7
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Typical Performance Characteristics (Continued)
10
VCC=2.7V
VEE=0V
VCC=5V
VEE=0
1
Output Voltage (V)
VO-Output Voltage Reference to VCC (V)
10
0.1
0.01
0.1
1E-3
0.1
1
10
Source Current (mA)
0.1
1
10
100
Sink Current (mA)
Figure 13. Output Voltage vs.Output Sink Current
Figure 12. Output Voltage vs.Output Source Current
10
100
VCC=2.7V
VEE=0V
RL=10KΩ to VCC/2
90
Output Voltage Swing (mV)
Output Voltage (V)
1
1
0.1
80
Negative Swing_VOL
70
60
50
40
30
Positive Swing_VCC-VOH
20
10
1
Sink Current (mA)
0
2.5
10
3.0
3.5
4.0
4.5
5.0
5.5
Supply Voltage (V)
Figure 14. Output Voltage vs.Output Sink Current
Figure 15. Output Voltage Swing vs. Supply Voltage
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
8
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Typical Performance Characteristics (Continued)
100
VCC=5V
70
60
VCC=2.7V
50
40
30
50
Phase Margin
40
30
RL=620Ω
RL=2KΩ
RL=100KΩ
20
VCC=5V
Positive Swing_VCC-VOH
VCC=2.7V
-20
0
20
40
60
-10
80
10k
Figure 16. Output Voltage Swing vs.Temperature
CL=100pF
CL=200pF
CL=470pF
CL=1000pF
70
60
Phase Margin
50
40
30
20
Gain
10
0
0
-20
-30
-10
VCC=2.5V, VEE=-2.5V
RL=620Ω
10k
Frequency (Hz)
40
30
20
CL=100pF
CL=200pF
CL=1000pF
90
80
70
60
50
Phase Margin
40
30
20
Gain
10
10
0
-10
-20
-10
-30
1M
50
0
-20
100k
CL=100pF
CL=200pF
CL=1000pF
60
Open Loop Gain (dB)
Open Loop Gain (dB)
40
-10
VCC=2.5V
VEE=-2.5V
RL=100KΩ
70
80
Phase Margin (Degree)
CL=100pF
CL=200pF
CL=470pF
CL=1000pF
50
10
100
80
90
60
-20
1M
Figure 17. Gain and Phase
vs. Frequency and Resistive Load
100
70
20
0
100k
Temperature ( C)
30
Gain
Frequency (Hz)
O
80
20
VCC=2.5V, VEE=-2.5V
CL=0
0
10
0
-40
60
40
10
20
80
RL=620Ω
RL=2KΩ
RL=100KΩ
60
Phase Margin (Degree)
Negative Swing_VOL
Phase Margin (Degree)
80
70
Open Loop Gain (dB)
Output Voltage Swing (mV)
100
80
RL=10KΩ to VCC/2
90
-40
-20
Figure 18. Gain and Phase
vs. Frequency and Capacitive Load
-30
10k
100k
Frequency (Hz)
1M
-40
Figure 19. Gain and Phase
vs. Frequency and Capacitive Load
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
9
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Typical Performance Characteristics (Continued)
1
THD+N (%)
VCC=5V, VEE=0V
VCC=2.5V, VEE=-2.5V
RL=10KΩ
AV=1
VIN
RL=2KΩ
VIN=100mVp-p
Unity Gain
0.1
VO=1Vp-p
VOUT
0.01
VO=2.5Vp-p
1E-3
20
100
1k
10k
100k
Frequency (Hz)
Figure 20. THD+N vs. Frequency
Figure 21. Non-Inverting Input Small Signal
Pulse Response
VCC=5V, VEE=0V
VIN
RL=2KΩ
VIN=1Vp-p
Unity Gain
VIN
VOUT
VCC=2.5V
VEE=-2.5V
CL=50pF,
RL=2KΩ
VIN=100mVp-p
Unity Gain
VOUT
Figure 23. Non-Inverting Input Small Signal Response
Figure 22. Non-Inverting Input Large Signal
Pulse Response
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
10
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Typical Performance Characteristics (Continued)
VIN
VCC=2.5V
VEE=-2.5V
CL=200pF,
RL=2KΩ
VIN=100mVp-p
Unity Gain
VOUT
Figure 24. Non-Inverting Input Small Signal Response
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
11
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Mechanical Dimensions
SOIC-8
4.700(0.185)
5.100(0.201)
7°
Unit: mm(inch)
0.320(0.013)
1.350(0.053)
1.750(0.069)
8°
8°
7°
0.675(0.027)
0.725(0.029)
D
5.800(0.228)
1.270(0.050)
6.200(0.244)
TYP
D
20:1
0.300(0.012)
R0.150(0.006)
0.100(0.004)
1.000(0.039)
φ0.800(0.031)
0.200(0.008)
0°
8°
3.800(0.150)
4.000(0.157)
0.330(0.013)
0.510(0.020)
0.190(0.007)
0.250(0.010)
0.900(0.035)
1°
5°
R0.150(0.006)
0.450(0.017)
0.800(0.031)
Note: Eject hole, oriented hole and mold mark is optional.
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
12
Data sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Mechanical Dimensions (Continued)
TSSOP-8
Unit: mm(inch)
SEE DETAIL A
2.900(0.114)
3.100(0.122)
0.050(0.002)
0.150(0.006)
0.090(0.004)
0.200(0.008)
1.200(0.047)
MAX
0.800(0.031)
1.050(0.041)
12 °
TOP & BOTTOM
R0.090(0.004)
GAGE PLANE
TYP
6.400(0.252)
4.500(0.177)
R0.090(0.004)
0°
8°
0.650(0.026)
TYP
0.400(0.016)
4.300(0.169)
φ
0.450(0.018)
0.750(0.030)
SEATING
PLANE
0.190(0.007)
0.300(0.012)
1.000(0.039)
REF
0.250(0.010)
TYP
1.950(0.077)
TYP
DETAIL A
Note: Eject hole, oriented hole and mold mark is optional.
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
13
Data Sheet
DUAL LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS
AZV358
Mechanical Dimensions (Continued)
MSOP-8
Unit: mm(inch)
0.300(0.012)TYP
P
0.150(0.006)TY
2.900(0.114)
3.100(0.122)
4.700(0.185)
5.100(0.201)
0.410(0.016)
0.650(0.026)
0.650(0.026)TYP
0°
6°
0.760(0.030)
0.970(0.038)
0.200(0.008)
2.900(0.114)
3.100(0.122)
0.000(0.000)
0.800(0.031)
1.200(0.047)
`
Note: Eject hole, oriented hole and mold mark is optional.
Mar. 2010 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
14
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE
IMPORTANT
NOTICE
BCD Semiconductor
BCD
Semiconductor Manufacturing
Manufacturing Limited
Limited reserves
reserves the
the right
right to
to make
make changes
changes without
without further
further notice
notice to
to any
any products
products or
or specifispecifications herein.
cations
herein. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not assume
assume any
any responsibility
responsibility for
for use
use of
of any
any its
its products
products for
for any
any
particular purpose,
particular
purpose, nor
nor does
does BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited assume
assume any
any liability
liability arising
arising out
out of
of the
the application
application or
or use
use
of any
of
any its
its products
products or
or circuits.
circuits. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not convey
convey any
any license
license under
under its
its patent
patent rights
rights or
or
other rights
other
rights nor
nor the
the rights
rights of
of others.
others.
MAIN SITE
SITE
MAIN
- Headquarters
BCD
Semiconductor Manufacturing Limited
BCD
Semiconductor
Manufacturing Limited
- Wafer
Fab
No.
1600, Zi
Xing Road,
Shanghai ZiZhu
Science-basedLimited
Industrial Park, 200241, China
Shanghai
SIM-BCD
Semiconductor
Manufacturing
Tel:
Fax: +86-21-24162277
800,+86-21-24162266,
Yi Shan Road, Shanghai
200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
REGIONAL SALES OFFICE
Shenzhen OfficeSALES OFFICE
REGIONAL
- Wafer
FabSemiconductor Manufacturing Limited
BCD
Shanghai
SIM-BCD
Semiconductor Manufacturing Co., Ltd.
- IC Design
Group
800 Yi
Shan Road,
Shanghai
200233,
China Corporation
Advanced
Analog
Circuits
(Shanghai)
Tel: +86-21-6485
1491,YiFax:
0008200233, China
8F, Zone B, 900,
Shan+86-21-5450
Road, Shanghai
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
Taiwan Office
Shanghai
Semiconductor Manufacturing Co., Ltd., Shenzhen Office
BCD Taiwan
Semiconductor
Shenzhen SIM-BCD
Office
Office (Taiwan) Company Limited
Unit
A Room
1203, Skyworth
Bldg., Gaoxin
Ave.1.S., Nanshan
Shenzhen,
4F, 298-1,
Guang Road,(Taiwan)
Nei-Hu District,
Taipei,
Shanghai
SIM-BCD
Semiconductor
Manufacturing
Co., Ltd.District,
Shenzhen
Office
BCDRui
Semiconductor
Company
Limited
China
Taiwan
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Tel:
+86-755-8826
Tel: +886-2-2656
2808
Room
E, 5F, Noble 7951
Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Taiwan
Fax:
+86-755-88267951
7865
Fax: +886-2-2656
28062808
Tel: +86-755-8826
Tel: +886-2-2656
Fax: +86-755-8826 7865
Fax: +886-2-2656 2806
USA Office
BCD Office
Semiconductor Corp.
USA
30920Semiconductor
Huntwood Ave.Corporation
Hayward,
BCD
CA 94544,
USA Ave. Hayward,
30920
Huntwood
Tel :94544,
+1-510-324-2988
CA
U.S.A
Fax:: +1-510-324-2988
+1-510-324-2788
Tel
Fax: +1-510-324-2788